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1
Motorola Bipolar Power Transistor Device Data
1 kV SWITCHMODE Series
These transistors are designed for high–voltage, high–speed, power switching in
inductive circuits where fall time is critical. T hey a re particularly s uited f or
line–operated switchmode applications.
Typical Applications: Features:
• Switching Regulators • Collector–Emitter Voltage — V
CEV
= 1000 Vdc
• Inverters • Fast Turn–Off Times
• Solenoids 80 ns Inductive Fall Time — 100_C (Typ)
• Relay Drivers 120 ns Inductive Crossover Time — 100_C (Typ)
• Motor Controls 800 ns Inductive Storage Time — 100_C (Typ)
• Deflection Circuits • 100_C Performance Specified for:
Reverse–Biased SOA with Inductive Load
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
• Extended FBSOA Rating Using Ultra–fast Rectifiers
• Extremely High RBSOA Capability
Collector–Emitter Voltage
Collector–Emitter Voltage
Collector Current — Continuous
— Peak
(1)
Base Current — Continuous
— Peak
(1)
Total Power Dissipation @ TC = 25_C
@ TC = 100_C
Derate above TC = 25_C
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction to Case
Lead Temperature for Soldering Purposes:
1/8″ from Case for 5 Seconds
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v10%.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJH16006A/D
POWER TRANSISTORS
8 AMPERES
500 VOLTS
150 WATTS
CASE 340D–01
REV 3
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MJH16006A
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Collector–Emitter Sustaining Voltage (Table 1)
(IC = 100 mA, IB = 0)
Collector Cutoff Current
(V
CEV
= 1000 Vdc, V
BE(off)
= 1.5 Vdc)
(V
CEV
= 1000 Vdc, V
BE(off)
= 1.5 Vdc, TC = 100_C)
Collector Cutoff Current
(VCE = 1000 Vdc, RBE = 50 Ω, TC = 100_C)
Emitter Cutoff Current
(VEB = 6 Vdc, IC = 0)
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
Collector–Emitter Saturation Voltage
(IC = 3 Adc, IB = 0.6 Adc)
(IC = 5 Adc, IB = 1 Adc)
(IC = 5 Adc, IB = 1 Adc, TC = 100_C)
Base–Emitter Saturation Voltage
(IC = 5 Adc, IB = 1 Adc)
(IC = 5 Adc, IB = 1 Adc, TC = 100_C)
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f
test
= 1 kHz)
SWITCHING CHARACTERISTICS
(IC = 5 Adc,
IB1 = 0.66 Adc,
IB1 = 0.66 Adc,
V
BE(off)
= 5 Vdc,
(IC = 5 Adc,
VCC = 250 Vdc,
(IB2 = 1.3 Adc,
RB1 = RB2 = 4 Ω)
IB1 = 0.66 Adc,
PW = 30 µs,
(1) Pulse Test: PW = 300 µs, Duty Cycle v 2%.
(TJ = 100
(TJ = 150
(I
(I
Duty Cycle
ns
ns
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MJH16006A
3
Motorola Bipolar Power Transistor Device Data
V
BE
, BASE–EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMPS)
0.2 1
2
0.5
0.3
1
IB, BASE CURRENT (AMPS)
0.5
0.3
0.2
0.2
100
0.2
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
1
0.3 0.5 1 5 10 20
30
10
5
Figure 2. Collector–Emitter Saturation Region
0.1
IC, COLLECTOR CURRENT (AMPS)
0.1
0.3 0.5
3
1
0.5
50
h
FE
, DC CURRENT GAIN
3
1 2 3 10
Figure 3. Collector–Emitter Saturation Region
50.50.1 0.2 0.3 1 102 50.5
Figure 4. Base–Emitter Saturation Region
Figure 5. Capacitance
10
2
10 k
1
VR, REVERSE VOLTAGE (VOLTS)
10
10
1 k
100 850
C, CAPACITANCE (pF)
100
0.1
TJ = 25°C
C
ib
3 A
TJ = 100°C
–55°C
25°C
20
2 3
IC/IB = 10
TJ = 100
°
C
IC/IB = 10
TJ = 25
°
C
1.5
1
2 10
0.1
2
5
0.3
0.2
0.2 5
3
5 A
8 A
1 A
IC/IB = 10
TJ = 25
°
C
5
0.3 3
C
ob
TYPICAL STATIC CHARACTERISTICS