Motorola MJF6388, MJF6668 Datasheet
1
Motorola Bipolar Power Transistor Device Data
For Isolated Package Applications
Designed for general–purpose amplifiers and switching applications, where the
mounting surface of the device is required to be electrically isolated from the heatsink
or chassis.
• Isolated Overmold Package, TO–220 Type
• Electrically Similar to the Popular 2N6388, 2N6668, TIP102 and TIP107
• 100 V
CEO(sus)
• 10 A Rated Collector Current
• No Isolating Washers Required
• Reduced System Cost
• High DC Current Gain — 1000 (Min) @ IC = 5.0 Adc
• High Isolation Voltage (up to 4500 VRMS)
• Case 221D is UL Recognized at 3500 VRMS: File #E69369
MAXIMUM RATINGS
Rating
Symbol
Value
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
Collector–Emitter Voltage
V
CEO
100
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Collector–Base Voltage
V
CB
100
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Emitter–Base Voltage
V
EB
5.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
RMS Isolation Voltage (1) Test No. 1 Per Figure 14
(for 1 sec, R.H. < 30%, TA = 25_C) Test No. 2 Per Figure 15
Test No. 3 Per Figure 16
V
ISOL
4500
3500
1500
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
V
Collector Current — Continuous
— Peak(2)
I
C
10
15
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Adc
Base Current
I
B
1.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
Adc
Total Power Dissipation* @ TC = 25_C
Derate above 25_C
P
D
40
0.31
ÎÎÎ
ÎÎÎ
ÎÎÎ
Watts
W/_C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
P
D
2.0
0.016
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Watts
W/_C
Operating and Storage Junction Temperature Range
TJ, T
stg
–65 to +150
ÎÎÎ
ÎÎÎ
ÎÎÎ
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
Thermal Resistance, Junction to Case*
R
θJC
3.2
ÎÎÎ
ÎÎÎ
ÎÎÎ
_
C/W
Thermal Resistance, Junction to Ambient
R
θJA
62.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
_
C/W
Lead Temperature for Soldering Purpose
T
L
260
ÎÎÎ
ÎÎÎ
ÎÎÎ
_
C
(1) Proper strike and creepage distance must be provided.
(2) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.
*Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die), the device
mounted on a heatsink, thermal grease applied and a mounting torque of 6 to 8 inSlbs.
Preferred devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJF6388/D
Motorola, Inc. 1995
COMPLEMENTARY
SILICON
POWER DARLINGTONS
10 AMPERES
100 VOLTS
40 WATTS
*Motorola Preferred Devices
CASE 221D–02
UL RECOGNIZED
REV 3
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Symbol
Min
Max
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
CEO(sus)
100
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Collector Cutoff Current
(VCE = 80 Vdc, IB = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
CEO
—
10
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
µAdc
Collector Cutoff Current (VCE = 100 Vdc, V
EB(off)
= 1.5 Vdc)
Collector Cutoff Current (VCE = 100 Vdc, V
EB(off)
= 1.5 Vdc, TC = 125_C)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
CEX
—
—
10
3.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
µAdc
mAdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
CBO
—
10
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
µAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
EBO
—
2.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ON CHARACTERISTICS (1)
DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc)
DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc)
DC Current Gain (IC = 8.0 Adc, VCE = 4.0 Vdc)
DC Current Gain (IC = 10 Adc, VCE = 3.0 Vdc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
h
FE
3000
1000
200
100
15000
—
—
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
—
Collector–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 6.0 mAdc)
Collector–Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc)
Collector–Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc)
Collector–Emitter Saturation Voltage (IC = 10 Adc, IB = 0.1 Adc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
CE(sat)
—
—
—
—
2.0
2.0
2.5
3.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Base–Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc)
Base–Emitter Saturation Voltage (IC = 10 Adc, IB = 0.1 Adc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
BE(sat)
—
—
2.8
4.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Base–Emitter On Voltage (IC = 8.0 Adc, VCE = 4.0 Vdc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
BE(on)
—
2.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
DYNAMIC CHARACTERISTICS
Small–Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f
test
= 1.0 MHz)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
|hfe|
20
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
—
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) MJF6388
MJF6668
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
C
ob
—
200
300
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
pF
Insulation Capacitance (Collector–to–External Heatsink)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
C
c–hs
—
3.0 Typ
ÎÎÎ
ÎÎÎ
ÎÎÎ
pF
Small–Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
h
fe
1000
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
—
(1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.
BASE
EMITTER
COLLECTOR
≈
8 k≈ 120
BASE
EMITTER
COLLECTOR
≈
8 k≈ 120
NPN
MJF6388
PNP
MJF6668
Figure 1. Darlington Schematic
3
Motorola Bipolar Power Transistor Device Data
0.3
Figure 2. Switching Times Test Circuit
VCC = 30 V
IC/IB = 250
IB1 = I
B2
TJ = 25
°
C
0.1 100.5 2 5
5
IC, COLLECTOR CURRENT (AMPS)
t, TIME ( s)
µ
1
0.2
0.1
7
Figure 3. Typical Switching Times
t
s
0.3
3
0.2
1
0.07
0.7
VCC = 30 V
IC/IB = 250
IB1 = I
B2
TJ = 25
°
C
0.1 0.7 100.5
0.3
2 5
5
IC, COLLECTOR CURRENT (AMPS)
t, TIME ( s)
µ
1
0.2
0.1
7
3
0.2
1
10
0.7
3 7
NPN
MJF6388
PNP
MJF6668
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 4. Maximum Forward Bias
Safe Operating Area
1
20
0.3
30
CURRENT LIMIT
SECONDARY BREAKDOWN LIMIT
THERMAL LIMIT @ TC = 25
°
C
(SINGLE PULSE)
I
C
, COLLECTOR CURRENT (AMPS)
0.02
2 3 50
3
0.05
10
0.03
dc
TJ = 150°C
1 ms
5 ms
100 µs
2
5
0.1
5 10020
0.5
2
10
0.2
0.5
1
≈
120
≈
8 k
V
1
APPROX.
+12 V
V
2
APPROX.
–8 V
25
µ
s
R
B
51
D
1
–4 V
V
CC
+30 V
R
C
SCOPE
TUT
tr, tf
≤
10 ns
DUTY CYCLE = 1%
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPES, e.g.,
MUR110 USED ABOVE IB
≈
100 mA
MSD6100 USED BELOW IB
≈
100 mA
t
f
t
r
t
d
t
r
t
s
t
d
t
f
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