Motorola MJF6107 Datasheet

Motorola Bipolar Power Transistor Device Data

 

For Isolated Package Applications

Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.

• Electrically Similar to the Popular 2N6107

• 70 V

CEO(sus)

• 7 A Rated Collector Current

• No Isolating Washers Required

• Reduced System Cost

• High Current Gain–Bandwidth Product

fT = 4 MHz (Min) Ca, IC = 500 mAdc

• UL Recognized, File #E69369, to 3500 V

RMS

Isolation

MAXIMUM RATINGS

Rating

Symbol

Value

ÎÎÎ

Unit

Collector–Emitter Voltage

CEO

ÎÎÎ

Vdc

Collector–Base Voltage

ÎÎÎ

Vdc

Emitter–Base Voltage

ÎÎÎ

Vdc

RMS Isolation Voltage (1) Test No. 1 Per Fig. 13

(for 1 sec, R.H. < 30%, Test No. 2 Per Fig. 14 TA = 25_C) Test No. 3 Per Fig. 15

ISOL

4500 3500 1500

ÎÎÎ

RMS

Collector Current — Continuous

Peak

ÎÎÎ

Adc

Base Current

ÎÎÎ

Adc

Total Power Dissipation* @ TC = 25_C

Derate above 25_C

0.27

ÎÎÎ

Watts W/_C

Total Power Dissipation @ TA = 25_C

Derate above 25_C

0.016

ÎÎÎ

Watts W/_C

Operating and Storage Junction Temperature Range

TJ, T

stg

–65 to +150

ÎÎÎ

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

ÎÎÎ

Unit

Thermal Resistance, Junction to Ambient

θJA

62.5

ÎÎÎ

C/W

Thermal Resistance, Junction to Case*

θJC

3.7

ÎÎÎ

C/W

Lead Temperature for Soldering Purpose

260

ÎÎÎ

*Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on

a heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs.

(1) Proper strike and creepage distance must be provided.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJF6107/D

 Motorola, Inc. 1995



PNP SILICON

POWER TRANSISTOR

7 AMPERES

70 VOLTS

34 WATTS

CASE 221D–02

TO–220 TYPE

REV 1

MJF6107

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

Characteristic

ÎÎÎÎ

Symbol

Min

Max

ÎÎÎ

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1) (IC = 100 mAdc, IB = 0)

ÎÎÎÎ

CEO(sus)

—

ÎÎÎ

Vdc

Collector Cutoff Current (VCE = 80 Vdc, IB = 0)

ÎÎÎÎ

CES

—

ÎÎÎ

µAdc

Collector Cutoff Current (VCE = 80 Vdc, V

EB(off)

= 1.5 Vdc)

ÎÎÎÎ

CEX

—

ÎÎÎ

µAdc

Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)

ÎÎÎÎ

EBO

—

ÎÎÎ

µAdc

ON CHARACTERISTICS (1)

DC Current Gain (IC = 2 Adc, VCE = 4 Vdc)

DC Current Gain (IC = 7 Adc, VCE = 4 Vdc)

ÎÎÎÎ

90 —

ÎÎÎ

—

Collector–Emitter Saturation Voltage (IC = 7 Adc, IB = 3 Adc)

ÎÎÎÎ

CE(sat)

—

ÎÎÎ

Vdc

Base–Emitter On Voltage (IC = 7 Adc, VCE = 4 Vdc)

ÎÎÎÎ

BE(on)

—

ÎÎÎ

Vdc

DYNAMIC CHARACTERISTICS

Current Gain–Bandwidth Product (2)

(IC = 500 mAdc, VCE = 4 Vdc, f

test

= 1 MHz)

ÎÎÎÎ

—

ÎÎÎ

MHz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz)

ÎÎÎÎ

—

250

ÎÎÎ

Small–Signal Current Gain (IC = 0.5 Adc, VCE = 4 Vdc, f = 50 kHz)

ÎÎÎÎ

—

ÎÎÎ

—

NOTES:

1. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2%.

2. fT = |h

fe|

• f

test

Figure 1. Switching Time Test Circuit

+11 V

25 µs

–9 V

–4 V

SCOPE

+30 V R

tr, tf

≤

10 ns

DUTY CYCLE = 1.0%

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB

≈

100 mA

MSD6100 USED BELOW IB

≈

100 mA

t, TIME ( s)

t, TIME (ms)

0.01

0.3

0.2

0.1

0.05

0.02

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

0.5 10 30 50 100 300 500 1K 3K 5K

SINGLE PULSE R

JC(t)

= r(t) R

J(pk)

– TC = P

(pk)

(t)

1 53 10K

0.5

0.3

0.03

0.1 0.2 20 200 2K2

0.1 IC, COLLECTOR CURRENT (AMP)

0.3 3

TJ = 25°C VCC = 30 V IC/IB = 10

td @ V

BE(off)

≈ 5 V

0.07 0.2 0.5 1 2 5 7

Figure 2. Turn–On Time

Figure 3. Thermal Response

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

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