1
Motorola Bipolar Power Transistor Device Data
For Isolated Package Applications
Designed for general–purpose amplifier and switching applications, where the
mounting surface of the device is required to be electrically isolated from the heatsink
or chassis.
• Electrically Similar to the Popular 2N6107
• 70 V
CEO(sus)
• 7 A Rated Collector Current
• No Isolating Washers Required
• Reduced System Cost
• High Current Gain–Bandwidth Product
fT = 4 MHz (Min) Ca, IC = 500 mAdc
• UL Recognized, File #E69369, to 3500 V
RMS
Isolation
Collector–Emitter Voltage
RMS Isolation Voltage (1) Test No. 1 Per Fig. 13
(for 1 sec, R.H. < 30%, Test No. 2 Per Fig. 14
TA = 25_C) Test No. 3 Per Fig. 15
Collector Current — Continuous
Peak
Total Power Dissipation* @ TC = 25_C
Derate above 25_C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case*
Lead Temperature for Soldering Purpose
_
C
*Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on
a heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs.
(1) Proper strike and creepage distance must be provided.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJF6107/D
PNP SILICON
POWER TRANSISTOR
7 AMPERES
70 VOLTS
34 WATTS
CASE 221D–02
TO–220 TYPE
REV 1
MJF6107
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Collector–Emitter Sustaining Voltage (1) (IC = 100 mAdc, IB = 0)
Collector Cutoff Current (VCE = 80 Vdc, IB = 0)
Collector Cutoff Current (VCE = 80 Vdc, V
EB(off)
= 1.5 Vdc)
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)
DC Current Gain (IC = 2 Adc, VCE = 4 Vdc)
DC Current Gain (IC = 7 Adc, VCE = 4 Vdc)
Collector–Emitter Saturation Voltage (IC = 7 Adc, IB = 3 Adc)
Base–Emitter On Voltage (IC = 7 Adc, VCE = 4 Vdc)
Current Gain–Bandwidth Product (2)
(IC = 500 mAdc, VCE = 4 Vdc, f
test
= 1 MHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz)
Small–Signal Current Gain (IC = 0.5 Adc, VCE = 4 Vdc, f = 50 kHz)
—
NOTES:
1. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2%.
2. fT = |h
fe|
• f
test
.
Figure 1. Switching Time Test Circuit
+11 V
25 µs
0
–9 V
R
B
–4 V
D
1
SCOPE
V
CC
+30 V
R
C
tr, tf
≤
10 ns
DUTY CYCLE = 1.0%
51
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB
≈
100 mA
MSD6100 USED BELOW IB
≈
100 mA
t, TIME ( s)
µ
t, TIME (ms)
1
0.01
0.3
0.2
0.1
0.05
0.02
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0.5 10 30 50 100 300 500 1K 3K 5K
SINGLE PULSE
R
θ
JC(t)
= r(t) R
θ
JC
T
J(pk)
– TC = P
(pk)
R
θ
JC
(t)
1 53 10K
0.5
0.3
0.03
0.1 0.2 20 200 2K2
0.1
IC, COLLECTOR CURRENT (AMP)
0.3 3
2
TJ = 25°C
VCC = 30 V
IC/IB = 10
td @ V
BE(off)
≈ 5 V
t
r
0.07 0.2 0.5 1 2 5 7
Figure 2. Turn–On Time
Figure 3. Thermal Response
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02