Motorola MJF2955, MJF3055 Datasheet
1
Motorola Bipolar Power Transistor Device Data
. . . specifically designed for general purpose amplifier and switching applications.
• Isolated Overmold Package (1500 Volts RMS Min)
• Electrically Similar to the Popular MJE3055T and MJE2955T
• Collector–Emitter Sustaining Voltage — V
CEO(sus)
90 Volts
• 10 Amperes Rated Collector Current
• No Isolating Washers Required
• Reduced System Cost
• UL Recognized, File #E69369, to 3500 V
RMS
Isolation
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Sustaining Voltage
V
CEO(sus)
90
Vdc
Collector–Emitter Breakdown Voltage
V
CES
90
Vdc
Base–Emitter Voltage
V
EBO
5
Vdc
Collector Current — Continuous
I
C
10
Adc
Base Current — Continuous
I
B
6
Adc
RMS Isolation Voltage (3) Test No. 1 Per Fig. 4
(for 1 sec, R.H. < 30%, Test No. 2 Per Fig. 5
TA = 25_C) Test No. 3 Per Fig. 6
V
ISOL
4500
3500
1500
V
RMS
Total Power Dissipation @ TC = 25_C (2)
Derate above 25_C
P
D
30
0.25
Watts
W/_C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
P
D
2
0.016
Watts
W/_C
Operating and Storage Temperature Range
TJ, T
stg
–55 to +150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance — Junction to Case (2)
R
θJC
4
_
C/W
Thermal Resistance — Junction to Ambient
R
θJA
62.5
_
C/W
Lead Temperature for Soldering Purposes
T
L
260
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
(2) Measurement made with thermocouple contacting the bottom insulated surface (in a location beneath the die), the devices mounted on a
(2) heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs.
(3) Proper strike and creepage distance must be provided.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJF3055/D
Motorola, Inc. 1995
COMPLEMENTARY
SILICON
POWER TRANSISTORS
10 AMPERES
90 VOLTS
30 WATTS
CASE 221D–02
TO–220 TYPE
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Symbol
Min
Max
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
OFF CHARACTERISTICS (1)
Collector–Emitter Sustaining Voltage (IC = 200 mAdc, IB = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
CEO(sus)
90
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Collector Cutoff Current (VCE = 90 Vdc, VBE = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
CES
—
1
ÎÎÎ
ÎÎÎ
ÎÎÎ
µAdc
Collector Cutoff Current (VCE = 90 Vdc, IE = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
CBO
—
1
ÎÎÎ
ÎÎÎ
ÎÎÎ
µAdc
Emitter–Base Leakage (VEB = 5 Vdc, IC = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
EBO
—
1
ÎÎÎ
ÎÎÎ
ÎÎÎ
µAdc
ON CHARACTERISTICS (1)
DC Current Gain (ICE = 4 Adc, VCE = 4 Vdc)
DC Current Gain (ICE = 10 Adc, VCE = 4 Vdc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
h
FE
20
5
100
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
—
Collector–Emitter Saturation Voltage
(IC = 4 Adc, IB = 0.4 Adc)
(IC = 10 Adc, IB = 3.3 Adc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
CE(sat)
—
—
1
2.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Base–Emitter On Voltage (IC = 4 Adc, VBE = 4 Vdc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
BE(on)
—
1.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain–Bandwidth Product
(VCE = 10 Vdc, IC = 0.5 Adc, f
test
= 500 kHz)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
f
T
2
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
MHz
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
I
C
, COLLECTOR CURRENT (AMPS)
0.01
IC, COLLECTOR CURRENT (AMP)
5
0.05 0.1 2
30
500
h
FE
, DC CURRENT GAIN
VCE = 2 V
TJ = 150°C
50
25°C
–55°C
10
0.02
0.2 0.5 1
300
200
100
20
IC, COLLECTOR CURRENT (AMP)
1.4
1.2
0.8
2
IC, COLLECTOR CURRENT (AMP)
1.6
1.2
0.8
0.4
Figure 1. Maximum Forward Bias Safe
Operating Area
Figure 2. DC Current Gain
Figure 3. “On” Voltages
0.2
0
0
0.4
0.2 10.5 100.1 0.3 32 5
0.6
1
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
100 µs
dc
20
1
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.3
2 100
5
3
10
2
0.5
CURRENT LIMIT
SECONDARY BREAKDOWN LIMIT
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
3 5 10 20
1
0.2
30
5 ms
50
5 10
V
BE(sat)
@ IC/IB = 10
VBE @ VCE = 3 V
PNP
MJF3055
PNP
MJF2955
TJ = 25°C
0.2 10.5 100.1 0.3 32 5
TJ = 150°C
1 ms
V
CE(sat)
@ IC/IB = 10
TJ = 25°C
V
BE(sat)
@ IC/IB = 10
VBE @ VCE = 2 V
V
CE(sat)
@ IC/IB = 10
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