Motorola MJF18009, MJE18009 Datasheet

1

Motorola Bipolar Power Transistor Device Data

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The MJE/MJF18009 has an application specific state–of–the–art die designed for
use in 220 V line–operated Switchmode Power supplies and electronic ballast (“light
ballast”). These high voltage/high speed transistors exhibit the following main
features:

• Improved Efficiency Due to Low Base Drive Requirements:

— High and Flat DC Current Gain h

FE

— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)

• Full Characterization at 125_C

• Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric

Distributions

• Specified Dynamic Saturation Data

• Two Package Choices: Standard TO–220 or Isolated TO–220

MAXIMUM RATINGS

Rating

Symbol

MJE18009

MJF18009

Unit

Collector–Emitter Sustaining Voltage

V

CEO

450

Vdc

Collector–Emitter Breakdown Voltage

V

CES

1000

Vdc

Collector–Base Breakdown Voltage

V

CBO

1000

Vdc

Emitter–Base Voltage

V

EBO

9

Vdc

Collector Current — Continuous

— Peak (1)

I

C

I

CM

10
20

Adc

Base Current — Continuous

— Peak (1)

I

B

I

BM

4
8

Adc

*Total Device Dissipation @ TC = 25°C

*Derate above 25_C

P

D

150

1.2

50

0.4

Watt

W/_C

Operating and Storage Temperature

TJ, T

stg

–65 to 150

_

C

RMS Isolation Voltage (2) Per Figure 22

(1s, 25°C, Humidity ≤ 30%) Per Figure 23
TC = 25°C Per Figure 24

V

ISOL1

V

ISOL2

V

ISOL3

4500
3500
1500

V

THERMAL CHARACTERISTICS

Rating

Symbol

MJE18009

MJF18009

Unit

Thermal Resistance — Junction to Case

— Junction to Ambient

R

θJC

R

θJA

0.83

62.5

2.5

62.5

_

C/W

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

T

L

260

_

C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
(2) Proper strike and creepage distance must be provided.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

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SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJE18009/D

 Motorola, Inc. 1995

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

POWER TRANSISTORS

10 AMPERES

1000 VOLTS

50 and 150 WATTS

CASE 221A–06

TO–220AB

CASE 221D–02

TO–220 FULLPACK

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2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS

(T

C

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(IC = 100 mA, L = 25 mH)

V

CEO(sus)

450

Vdc

Collector Cutoff Current

(VCE = Rated V

CEO

, IB = 0)

I

CEO

100

µAdc

Collector Cutoff Current (VCE = Rated V

CES

, VEB = 0)

Collector Cutoff Current (VCE = 800 V, VEB = 0)

@ TC = 25°C
@ TC = 125°C
@ TC = 125°C

I

CES

100
500
100

µAdc

Emitter–Cutoff Current

(VEB = 9 Vdc, IC = 0)

I

EBO

100

µAdc

ON CHARACTERISTICS

Base–Emitter Saturation Voltage

(IC = 3 Adc, IB = 0.3 Adc)
(IC = 5 Adc, IB = 1 Adc)
(IC = 7 Adc, IB = 1.4 Adc)

V

BE(sat)

0.8

0.9

0.9

1.1

1.15

1.25

Vdc

Collector–Emitter Saturation Voltage

(IC = 3 Adc, IB = 0.3 Adc)

@ TC = 25°C
@ TC = 125°C

0.3

0.3

0.6

0.65

(IC = 5 Adc, IB = 1 Adc)

@ TC = 25°C
@ TC = 125°C

0.3

0.3

0.6

0.65

(IC = 7 Adc, IB = 1.4 Adc)

@ TC = 25°C
@ TC = 125°C

0.35

0.4

0.7

0.9

DC Current Gain

(IC = 1.5 Adc, VCE = 5 Vdc)

@ TC = 25°C
@ TC = 125°C

14

29

34

(IC = 5 Adc, VCE = 1 Vdc)

@ TC = 25°C
@ TC = 125°C

10

8

13

11.5

(IC = 7 Adc, VCE = 1 Vdc)

@ TC = 25°C
@ TC = 125°C

7
5

10

7.5

—

(IC = 10 mAdc, VCE = 5 Vdc)

@ TC = 25°C

10

25

—

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)

f

T

12

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1 MHz)

C

ob

150

200

pF

Input Capacitance

(VEB = 8 Vdc)

C

ib

2750

3500

pF

DYNAMIC SATURATION VOLTAGE

@ 1 µs

@ TC = 25°C
@ TC = 125°C

8

13.5

Dynamic Saturation
Voltage:

Determined 1 µs and

IB1 = 300 mAdc

VCC = 300 V

@ 3 µs

@ TC = 25°C
@ TC = 125°C

4
8

µs and
3 µs respectively after
rising IB1 reaches

@ 1 µs

@ TC = 25°C
@ TC = 125°C

15
21

90% of final I

B1

IB1 = 1.4 Adc
VCC = 300 V

@ 3 µs

@ TC = 25°C
@ TC = 125°C

2

2.7

V

CE(sat)

Vdc

IC = 3 Adc

IC = 7 Adc

h

FE

V

CE(dsat)

—

V

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3

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)

Turn–on Time

@ TC = 25°C
@ TC = 125°C

t

on

220
220

300

ns

Turn–off Time

IB2 = 1.5 Adc

VCC = 300 Vdc

@ TC = 25°C
@ TC = 125°C

t

off

1.28

1.6

2.5

µs

Turn–on Time

@ TC = 25°C
@ TC = 125°C

t

on

120
350

250

ns

Turn–off Time

IB2 = 2.5 Adc

VCC = 300 Vdc

@ TC = 25°C
@ TC = 125°C

t

off

2.2

2.6

2.5

µs

Turn–on Time

@ TC = 25°C
@ TC = 125°C

t

on

175
500

300

ns

Turn–off Time

IB2 = 3.5 Adc

VCC = 300 Vdc

@ TC = 25°C
@ TC = 125°C

t

off

1.75

2.1

2.5

µs

SWITCHING CHARACTERISTICS: Inductive Load (V

clamp

= 300 V, VCC = 15 V, L = 200 µH)

Fall Time

@ TC = 25°C
@ TC = 125°C

t

f

110
125

200

ns

Storage Time

IC = 3 Adc
IB1 = 0.3 Adc
I

= 1.5 Adc

@ TC = 25°C
@ TC = 125°C

t

s

2

2.6

2.75

µs

Crossover Time

IB2 = 1.5 Adc

@ TC = 25°C
@ TC = 125°C

t

c

250
300

350

ns

Fall Time

@ TC = 25°C
@ TC = 125°C

t

f

110
135

200

ns

Storage Time

IC = 5 Adc

IB1 = 1 Adc

I

= 2.5 Adc

@ TC = 25°C
@ TC = 125°C

t

s

2.4

3.1

3.5

µs

Crossover Time

IB2 = 2.5 Adc

@ TC = 25°C
@ TC = 125°C

t

c

260
300

350

ns

Fall Time

@ TC = 25°C
@ TC = 125°C

t

f

105
150

200

ns

Storage Time

IC = 7 Adc
IB1 = 1.4 Adc
I

= 3.5 Adc

@ TC = 25°C
@ TC = 125°C

t

s

1.75

2.25

2.75

µs

Crossover Time

IB2 = 3.5 Adc

@ TC = 25°C
@ TC = 125°C

t

c

225
300

350

ns

IC = 3 Adc, IB1 = 0.3 Adc

IC = 5 Adc, IB1 = 1 Adc

IC = 7 Adc, IB1 = 1.4 Adc