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Motorola Bipolar Power Transistor Device Data
!
The MJE/MJF18009 has an application specific state–of–the–art die designed for
use in 220 V line–operated Switchmode Power supplies and electronic ballast (“light
ballast”). These high voltage/high speed transistors exhibit the following main
features:
• Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain h
FE
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
• Full Characterization at 125_C
• Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric
Distributions
• Specified Dynamic Saturation Data
• Two Package Choices: Standard TO–220 or Isolated TO–220
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Collector Current — Continuous
— Peak (1)
Base Current — Continuous
— Peak (1)
*Total Device Dissipation @ TC = 25°C
*Derate above 25_C
Operating and Storage Temperature
RMS Isolation Voltage (2) Per Figure 22
(1s, 25°C, Humidity ≤ 30%) Per Figure 23
TC = 25°C Per Figure 24
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
(2) Proper strike and creepage distance must be provided.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE18009/D
POWER TRANSISTORS
10 AMPERES
1000 VOLTS
50 and 150 WATTS
CASE 221A–06
TO–220AB
CASE 221D–02
TO–220 FULLPACK
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Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Collector–Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
Collector Cutoff Current
(VCE = Rated V
CEO
, IB = 0)
Collector Cutoff Current (VCE = Rated V
CES
, VEB = 0)
Collector Cutoff Current (VCE = 800 V, VEB = 0)
@ TC = 25°C
@ TC = 125°C
@ TC = 125°C
Emitter–Cutoff Current
(VEB = 9 Vdc, IC = 0)
Base–Emitter Saturation Voltage
(IC = 3 Adc, IB = 0.3 Adc)
(IC = 5 Adc, IB = 1 Adc)
(IC = 7 Adc, IB = 1.4 Adc)
Collector–Emitter Saturation Voltage
(IC = 3 Adc, IB = 0.3 Adc)
(IC = 7 Adc, IB = 1.4 Adc)
DC Current Gain
(IC = 1.5 Adc, VCE = 5 Vdc)
(IC = 5 Adc, VCE = 1 Vdc)
(IC = 7 Adc, VCE = 1 Vdc)
(IC = 10 mAdc, VCE = 5 Vdc)
Current Gain Bandwidth
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
Input Capacitance
(VEB = 8 Vdc)
DYNAMIC SATURATION VOLTAGE
Dynamic Saturation
Voltage:
Determined 1 µs and
IB1 = 300 mAdc
VCC = 300 V
µs and
3 µs respectively after
rising IB1 reaches
IB1 = 1.4 Adc
VCC = 300 V
V
CE(sat)
Vdc
IC = 3 Adc
IC = 7 Adc
h
FE
V
CE(dsat)
—
V
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Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)
IB2 = 1.5 Adc
VCC = 300 Vdc
IB2 = 2.5 Adc
VCC = 300 Vdc
IB2 = 3.5 Adc
VCC = 300 Vdc
SWITCHING CHARACTERISTICS: Inductive Load (V
clamp
= 300 V, VCC = 15 V, L = 200 µH)
IC = 3 Adc
IB1 = 0.3 Adc
I
= 1.5 Adc
IC = 5 Adc
IB1 = 1 Adc
I
= 2.5 Adc
IC = 7 Adc
IB1 = 1.4 Adc
I
= 3.5 Adc
IC = 3 Adc, IB1 = 0.3 Adc
IC = 5 Adc, IB1 = 1 Adc
IC = 7 Adc, IB1 = 1.4 Adc