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Motorola Bipolar Power Transistor Device Data
SWITCHMODE
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE/MJF18004 have an applications specific state–of–the–art die designed
for use in 220 V line operated Switchmode Power supplies and electronic light
ballasts. This high voltage/high speed transistors offer the following:
• Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain h
FE
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
• Full Characterization at 125_C
• Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric
Distributions
• Two Package Choices: Standard TO–220 or Isolated TO–220
• MJF18004, Case 221D, is UL Recognized at 3500 V
RMS
: File #E69369
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Collector Current — Continuous
— Peak(1)
Base Current — Continuous
— Peak(1)
RMS Isolation Voltage(2) Test No. 1 Per Fig. 22a
(for 1 sec, R.H. Test No. 2 Per Fig. 22b
< 30%, TA = 25_C) Test No. 3 Per Fig. 22c
Total Device Dissipation (TC = 25_C)
Derate above 25_C
Operating and Storage Temperature
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise specified)
Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
Collector Cutoff Current (VCE = Rated V
CEO
, IB = 0)
Collector Cutoff Current (VCE = Rated V
CES
, VEB = 0) (TC = 25_C)
(TC = 125_C)
Collector Cutoff Current (VCE = 800 V, VEB = 0) (TC = 125_C)
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
µAdc
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%. (continued)
(2) Proper strike and creepage distance must be provided.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE18004/D
MJE18004
MJF18004
POWER TRANSISTOR
5.0 AMPERES
1000 VOLTS
35 and 75 WATTS
*Motorola Preferred Device
*
*
CASE 221A–06
TO–220AB
MJE18004
CASE 221D–02
ISOLATED TO–220 TYPE
MJF18004
REV 3
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Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued (T
C
= 25_C unless otherwise specified)
Base–Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc)
Base–Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.4 Adc)
Collector–Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.1 Adc)
(IC = 2.0 Adc, IB = 0.4 Adc)
(IC = 2.5 Adc, IB = 0.5 Adc)
(TC = 125_C)
(TC = 125_C)
DC Current Gain (IC = 1.0 Adc, VCE = 2.5 Vdc)
DC Current Gain (IC = 0.3 Adc, VCE = 5.0 Vdc)
DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc)
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)
(TC = 125_C)
(TC = 125_C)
(TC = 125_C)
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance (VEB = 8.0 V)
Determined 1.0 µs and
3.0 µs respectively after
rising IB1 reaches 90% of
IB1 = 100 mAdc
VCC = 300 V)
rising IB1 reaches 90% of
final I
B1
(see Figure 18)
IB1 = 400 mAdc
VCC = 300 V)
SWITCHING CHARACTERISTICS: Resistive Load (D.C. v 10%, Pulse Width = 20 µs)
Dynamic Saturation Voltage:
(IC = 1.0 Adc
(IC = 2.0 Adc
V
CE(dsat)
(IC = 1.0 Adc, IB1 = 0.1 Adc,
IB2 = 0.5 Adc, VCC = 300 V)
(IC = 2.0 Adc, IB1 = 0.4 Adc,
IB1 = 1.0 Adc, VCC = 300 V)
(IC = 2.5 Adc, IB1 = 0.5 Adc,
IB2 = 0.5 Adc, VCC = 250 V)
Vdc
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Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued (T
C
= 25_C unless otherwise specified)
SWITCHING CHARACTERISTICS: Inductive Load (V
clamp
= 300 V, VCC = 15 V, L = 200 µH)
(IC = 1.0 Adc, IB1 = 0.1 Adc,
IB2 = 0.5 Adc)
(IC = 2.0 Adc, IB1 = 0.4 Adc,
IB2 = 1.0 Adc)
(IC = 2.5 Adc, IB1 = 0.5 Adc,
IB2 = 0.5 Adc,