Motorola MJF18004, MJE18004 Datasheet
1
Motorola Bipolar Power Transistor Device Data
SWITCHMODE
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE/MJF18004 have an applications specific state–of–the–art die designed
for use in 220 V line operated Switchmode Power supplies and electronic light
ballasts. This high voltage/high speed transistors offer the following:
• Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain h
FE
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
• Full Characterization at 125_C
• Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric
Distributions
• Two Package Choices: Standard TO–220 or Isolated TO–220
• MJF18004, Case 221D, is UL Recognized at 3500 V
RMS
: File #E69369
MAXIMUM RATINGS
Rating
Symbol
MJE18004
MJF18004
Unit
Collector–Emitter Sustaining Voltage
V
CEO
450
Vdc
Collector–Emitter Breakdown Voltage
V
CES
1000
Vdc
Emitter–Base Voltage
V
EBO
9.0
Vdc
Collector Current — Continuous
— Peak(1)
I
C
I
CM
5.0
10
Adc
Base Current — Continuous
— Peak(1)
I
B
I
BM
2.0
4.0
Adc
RMS Isolation Voltage(2) Test No. 1 Per Fig. 22a
(for 1 sec, R.H. Test No. 2 Per Fig. 22b
< 30%, TA = 25_C) Test No. 3 Per Fig. 22c
V
ISOL
—
—
—
4500
3500
1500
Volts
Total Device Dissipation (TC = 25_C)
Derate above 25_C
P
D
75
0.6
35
0.28
Watts
W/_C
Operating and Storage Temperature
TJ, T
stg
–65 to 150
_
C
THERMAL CHARACTERISTICS
Rating
Symbol
MJE18004
MJF18004
Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
R
θJC
R
θJA
1.65
62.5
3.55
62.5
_
C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
T
L
260
_
C
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
V
CEO(sus)
450
—
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Collector Cutoff Current (VCE = Rated V
CEO
, IB = 0)
I
CEO
—
—
100
ÎÎÎ
ÎÎÎ
ÎÎÎ
µAdc
Collector Cutoff Current (VCE = Rated V
CES
, VEB = 0) (TC = 25_C)
(TC = 125_C)
Collector Cutoff Current (VCE = 800 V, VEB = 0) (TC = 125_C)
I
CES
—
—
—
—
—
—
100
500
100
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
µAdc
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
I
EBO
—
—
100
ÎÎÎ
ÎÎÎ
ÎÎÎ
µAdc
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%. (continued)
(2) Proper strike and creepage distance must be provided.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE18004/D
Motorola, Inc. 1995
MJE18004
MJF18004
POWER TRANSISTOR
5.0 AMPERES
1000 VOLTS
35 and 75 WATTS
*Motorola Preferred Device
*
*
CASE 221A–06
TO–220AB
MJE18004
CASE 221D–02
ISOLATED TO–220 TYPE
MJF18004
REV 3
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued (T
C
= 25_C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Base–Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc)
Base–Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.4 Adc)
V
BE(sat)
—
—
0.82
0.92
1.1
1.25
Vdc
Collector–Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.1 Adc)
(IC = 2.0 Adc, IB = 0.4 Adc)
(IC = 2.5 Adc, IB = 0.5 Adc)
(TC = 125_C)
(TC = 125_C)
V
CE(sat)
—
—
—
—
—
0.25
0.29
0.3
0.36
0.5
0.5
0.6
0.45
0.8
0.75
Vdc
DC Current Gain (IC = 1.0 Adc, VCE = 2.5 Vdc)
DC Current Gain (IC = 0.3 Adc, VCE = 5.0 Vdc)
DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc)
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)
(TC = 125_C)
(TC = 125_C)
(TC = 125_C)
h
FE
12
—
14
—
6.0
—
10
21
20
—
32
11
7.5
22
—
—
34
—
—
—
—
—
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
f
T
—
13
—
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
C
ob
—
50
65
pF
Input Capacitance (VEB = 8.0 V)
C
ib
—
800
1000
pF
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
1.0 µs
(TC = 125°C)
—
—
6.8
14
—
—
Determined 1.0 µs and
3.0 µs respectively after
rising IB1 reaches 90% of
IB1 = 100 mAdc
VCC = 300 V)
ÎÎÎ
ÎÎÎ
ÎÎÎ
3.0 µs
(TC = 125°C)
—
—
2.4
5.6
—
—
rising IB1 reaches 90% of
final I
B1
(see Figure 18)
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
1.0 µs
(TC = 125°C)
—
—
11.3
15.5
—
—
IB1 = 400 mAdc
VCC = 300 V)
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
3.0 µs
(TC = 125°C)
—
—
1.3
6.1
—
—
SWITCHING CHARACTERISTICS: Resistive Load (D.C. v 10%, Pulse Width = 20 µs)
Turn–On Time
(TC = 125°C)
t
on
—
—
210
180
300
—
ns
Turn–Off Time
(TC = 125°C)
t
off
—
—
1.0
1.3
1.7
—
µs
Turn–On Time
(TC = 125°C)
t
on
—
—
75
90
110
—
ns
Turn–Off Time
(TC = 125°C)
t
off
—
—
1.5
1.8
2.5
—
µs
Turn–On Time
(TC = 125°C)
t
on
—
—
450
900
800
1400
ns
Storage Time
(TC = 125°C)
t
s
—
—
2.0
2.2
3.0
3.5
µs
Fall Time
(TC = 125°C)
t
f
—
—
275
500
400
800
ns
Dynamic Saturation Voltage:
(IC = 1.0 Adc
(IC = 2.0 Adc
V
CE(dsat)
(IC = 1.0 Adc, IB1 = 0.1 Adc,
IB2 = 0.5 Adc, VCC = 300 V)
(IC = 2.0 Adc, IB1 = 0.4 Adc,
IB1 = 1.0 Adc, VCC = 300 V)
(IC = 2.5 Adc, IB1 = 0.5 Adc,
IB2 = 0.5 Adc, VCC = 250 V)
Vdc
3
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued (T
C
= 25_C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS: Inductive Load (V
clamp
= 300 V, VCC = 15 V, L = 200 µH)
Fall Time
(TC = 125°C)
t
fi
—
—
100
100
150
—
ns
Storage Time
(TC = 125°C)
t
si
—
—
1.1
1.4
1.7
—
µs
Crossover Time
(TC = 125°C)
t
c
—
—
180
160
250
—
ns
Fall Time
(TC = 125°C)
t
fi
—
—
90
150
175
—
ns
Storage Time
(TC = 125°C)
t
si
—
—
1.7
2.2
2.5
—
µs
Crossover Time
(TC = 125°C)
t
c
—
—
180
250
300
—
ns
Fall Time
(TC = 125°C)
t
fi
—
—
70
100
130
175
ns
Storage Time
V
BE(off)
= –5.0 Vdc)
(TC = 125°C)
t
si
—
—
0.75
1.0
1.0
1.3
µs
Crossover Time
(TC = 125°C)
t
c
—
—
250
250
350
500
ns
(IC = 1.0 Adc, IB1 = 0.1 Adc,
IB2 = 0.5 Adc)
(IC = 2.0 Adc, IB1 = 0.4 Adc,
IB2 = 1.0 Adc)
(IC = 2.5 Adc, IB1 = 0.5 Adc,
IB2 = 0.5 Adc,
Loading...