Motorola MJF13007, MJE13007 Datasheet

1

Motorola Bipolar Power Transistor Device Data

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SWITCHMODE



NPN Bipolar Power Transistor
For Switching Power Supply Applications

The MJE/MJF13007 is designed for high–voltage, high–speed power switching
inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V
switchmode applications such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.

• V

CEO(sus)

400 V

• Reverse Bias SOA with Inductive Loads @ TC = 100°C

• 700 V Blocking Capability

• SOA and Switching Applications Information

• Two Package Choices: Standard TO–220 or Isolated TO–220

• MJF13007 is UL Recognized to 3500 V

RMS

, File #E69369

MAXIMUM RATINGS

Rating Symbol MJE13007 MJF13007 Unit

Collector–Emitter Sustaining Voltage V

CEO

400 Vdc

Collector–Emitter Breakdown Voltage V

CES

700 Vdc

Emitter–Base Voltage V

EBO

9.0 Vdc

Collector Current — Continuous

Collector Current — Peak (1)

I

C

I

CM

8.0
16

Adc

Base Current — Continuous

Base Current — Peak (1)

I

B

I

BM

4.0

8.0

Adc

Emitter Current — Continuous

Emitter Current — Peak (1)

I

E

I

EM

12
24

Adc

RMS Isolation Voltage

(for 1 sec, R.H. < 30%, TA = 25°C)

Test No. 1 Per Fig. 15
Test No. 2 Per Fig. 16

Test No. 3 Per Fig. 17
Proper strike and creepage distance must
be provided

V

ISOL

—
—
—

4500
3500
1500

V

Total Device Dissipation @ TC = 25°C

Derate above 25°C

P

D

80

0.64

40*

0.32

Watts

W/°C

Operating and Storage Temperature TJ, T

stg

– 65 to 150 °C

THERMAL CHARACTERISTICS

Thermal Resistance

— Junction to Case
— Junction to Ambient

R

θJC

R

θJA

°1.56°
°62.5°

°3.12°
°62.5°

°C/W

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

T

L

260 °C

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
*Measurement made with thermocouple contacting the bottom insulated mountign surface of the

*package (in a location beneath the die), the device mounted on a heatsink with thermal grease applied
*at a mounting torque of 6 to 8•lbs.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJE13007/D

 Motorola, Inc. 1995

MJE13007
MJF13007

POWER TRANSISTOR

8.0 AMPERES
400 VOLTS

80/40 WATTS

CASE 221A–06

TO–220AB

MJE13007

CASE 221D–02

ISOLATED TO–220 TYPE

UL RECOGNIZED

MJF13007

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2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS

(TC = 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

*OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(IC = 10 mA, IB = 0)

V

CEO(sus)

400 — — Vdc

Collector Cutoff Current

(V

CES

= 700 Vdc)

(V

CES

= 700 Vdc, TC = 125°C)

I

CES

—
—

—
—

0.1

1.0

mAdc

Emitter Cutoff Current

(VEB = 9.0 Vdc, IC = 0)

I

EBO

— — 100 µAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased I

S/b

See Figure 6

Clamped Inductive SOA with Base Reverse Biased — See Figure 7

*ON CHARACTERISTICS

DC Current Gain

(IC = 2.0 Adc, VCE = 5.0 Vdc)
(IC = 5.0 Adc, VCE = 5.0 Vdc)

h

FE

8.0

5.0

—
—

40
30

—

Collector–Emitter Saturation Voltage

(IC = 2.0 Adc, IB = 0.4 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc)
(IC = 8.0 Adc, IB = 2.0 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc, TC = 100°C)

V

CE(sat)

—
—
—
—

—
—
—
—

1.0

2.0

3.0

3.0

Vdc

Base–Emitter Saturation Voltage

(IC = 2.0 Adc, IB = 0.4 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc, TC = 100°C)

V

BE(sat)

—
—
—

—
—
—

1.2

1.6

1.5

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 500 mAdc, VCE = 10 Vdc, f = 1.0 MHz)

f

T

4.0 14 — MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

C

ob

— 80 — pF

Collector to Heatsink Capacitance, MJF13007 C

c–hs

— 3.0 — pF

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time

t

d

— 0.025 0.1 µs

Rise Time

t

r

— 0.5 1.5

Storage Time

IB1 = IB2 = 1.0 A, tp = 25 µs,
Duty Cycle ≤ 1.0%)

t

s

— 1.8 3.0

Fall Time

≤ 1.0%)

t

f

— 0.23 0.7

Inductive Load, Clamped (Table 1)

Voltage Storage Time VCC = 15 Vdc, IC = 5.0 A TC = 25°C

V

clamp

= 300 Vdc TC = 100°C

t

sv

—
—

1.2

1.6

2.0

3.0

µs

Crossover Time I

B(on)

= 1.0 A, I

B(off)

= 2.5 A TC = 25°C

LC = 200 µH TC = 100°C

t

c

—
—

0.15

0.21

0.30

0.50

µs

Fall Time TC = 25°C

TC = 100°C

t

fi

—
—

0.04

0.10

0.12

0.20

µs

* Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

(VCC = 125 Vdc, IC = 5.0 A,

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3

Motorola Bipolar Power Transistor Device Data

0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
IC, COLLECTOR CURRENT (AMPS)

V

Figure 1. Base–Emitter Saturation Voltage

0.01

V

IC, COLLECTOR CURRENT (AMPS)

Figure 2. Collector–Emitter Saturation Voltage

0.01 0.02 0.05 0.1 0.2 0.5 1 2 3 5 10
IB, BASE CURRENT (AMPS)

Figure 3. Collector Saturation Region

V

CE

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.01 0.1 1 10

h

FE

, DC CURRENT GAIN

IC, COLLECTOR CURRENT (AMPS)

Figure 4. DC Current Gain

0.1 1 10 100 1000
VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Capacitance

C, CAPACITANCE (pF)

BE(sat)

, BASE–EMITTER SATURATION

VOLTAGE (VOLTS)

CE(sat)

, COLLECTOR–EMITTER SATURATION

VOLTAGE (VOLTS)

1.4

1.2

1

0.8

0.6

0.4

10

0.01

0.02

0.05

0.1

0.2

0.5

1

2

5

3

2.5

2

1.5

1

0.5

0

100

10

1

10000

1000

100

10

0.02 0.05 0.1 0.2 0.5 1 2 5 10

IC/IB = 5

TC = –40°C

25°C

100°C

IC/IB = 5

TC = –40°C

25°C

100°C

TJ = 25°C

IC = 8 A

IC = 5 A

IC = 3 A

IC = 1 A

TJ = 100°C

25°C

40°C

VCE = 5 V

C

ib

C

ob

TJ = 25°C