Motorola MJF122, MJF127 Datasheet

Motorola Bipolar Power Transistor Device Data

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For Isolated Package Applications

Designed for general–purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.

• Electrically Similar to the Popular TIP122 and TIP127

• 100 V

CEO(sus)

• 5 A Rated Collector Current

• No Isolating Washers Required

• Reduced System Cost

• High DC Current Gain — 2000 (Min) @ IC = 3 Adc

• UL Recognized, File #E69369, to 3500 V

RMS

Isolation

MAXIMUM RATINGS

Rating

Symbol

Value

ÎÎÎ

Unit

Collector–Emitter Voltage

CEO

100

ÎÎÎ

Vdc

Collector–Base Voltage

100

ÎÎÎ

Vdc

Emitter–Base Voltage

ÎÎÎ

Vdc

RMS Isolation Voltage (1) Test No. 1 Per Fig. 14

(for 1 sec, R.H. < 30%, Test No. 2 Per Fig. 15 TA = 25_C) Test No. 3 Per Fig. 16

ISOL

4500 3500 1500

ÎÎÎ

RMS

Collector Current — Continuous

Peak

5 8

ÎÎÎ

Adc

Base Current

0.12

ÎÎÎ

Adc

Total Power Dissipation* @ TC = 25_C

Derate above 25_C

0.24

ÎÎÎ

Watts W/_C

Total Power Dissipation @ TA = 25_C

Derate above 25_C

0.016

ÎÎÎ

Watts W/_C

Operating and Storage Junction Temperature Range

TJ, T

stg

–65 to +150

ÎÎÎ

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

ÎÎÎ

Unit

Thermal Resistance, Junction to Ambient

θJA

62.5

ÎÎÎ

C/W

Thermal Resistance, Junction to Case*

θJC

4.1

ÎÎÎ

C/W

Lead Temperature for Soldering Purpose

260

ÎÎÎ

*Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on

a heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs.

(1) Proper strike and creepage distance must be provided.

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SEMICONDUCTOR TECHNICAL DATA

Order this document

by MF122/D

 Motorola, Inc. 1995

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COMPLEMENTARY

SILICON

POWER DARLINGTONS

5 AMPERES

100 VOLTS

30 WATTS





CASE 221D–02

TO–220 TYPE

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Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

Characteristic

ÎÎÎÎ

Symbol

Min

Max

ÎÎÎ

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(IC = 100 mAdc, IB = 0)

ÎÎÎÎ

CEO(sus)

100

—

ÎÎÎ

Vdc

Collector Cutoff Current

(VCE = 50 Vdc, IB = 0)

ÎÎÎÎ

CEO

—

ÎÎÎ

µAdc

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

ÎÎÎÎ

CBO

—

ÎÎÎ

µAdc

Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)

ÎÎÎÎ

EBO

—

ÎÎÎ

mAdc

ON CHARACTERISTICS (1)

DC Current Gain (IC = 0.5 Adc, VCE = 3 Vdc)

DC Current Gain (IC = 3 Adc, VCE = 3 Vdc)

ÎÎÎÎ

1000 2000

— —

ÎÎÎ

—

Collector–Emitter Saturation Voltage (IC = 3 Adc, IB = 12 mAdc)

Collector–Emitter Saturation Voltage (IC = 5 Adc, IB = 20 mAdc)

ÎÎÎÎ

CE(sat)

— —

3.5

ÎÎÎ

Vdc

Base–Emitter On Voltage (IC = 3 Adc, VCE = 3 Vdc)

ÎÎÎÎ

BE(on)

—

2.5

ÎÎÎ

Vdc

DYNAMIC CHARACTERISTICS

Small–Signal Current Gain (IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz)

ÎÎÎÎ

—

ÎÎÎ

—

Output Capacitance MJF127

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJF122

ÎÎÎÎ

— —

300 200

ÎÎÎ

(1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2%.

Figure 1. Switching Times Test Circuit

VCC = 30 V IC/IB = 250 IB1 = I

TJ = 25

0.1 0.7 100.5

0.3

2 5

IC, COLLECTOR CURRENT (AMP)

td @ V

BE(off)

= 0 V

t, TIME ( s)

0.5

0.2

0.1

0.05

Figure 2. Typical Switching Times

0.3

0.2

0.07

0.7

3 7

PNP NPN

≈

120

≈

8 k

APPROX.

+8 V

APPROX.

–12 V

+4 V

–30 V

SCOPE

TUT

tr, tf

≤

10 ns

DUTY CYCLE = 1%

FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPES, e.g.,

1N5825 USED ABOVE IB

≈

100 mA

MSD6100 USED BELOW IB

≈

100 mA

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Motorola Bipolar Power Transistor Device Data

, POWER DISSIPATION (WATTS)

TAT

Figure 3. Maximum Power Derating

T, TEMPERATURE (°C)

40 60 100 120 16080 140

t, TIME (ms)

0.01

0.1 0.5 10 20 50 100 200 500 5K 10K1 52

0.2

0.1

0.05

r(t), TRANSIENT THERMAL

SINGLE PULSE R

JC(t)

= r(t) R

J(pk)

– TC = P

(pk)

(t)

RESISTANCE (NORMALIZED)

Figure 4. Thermal Response

0.5

0.3

0.03

0.02

0.2

1K 2K30 3003

0.3

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 5. Maximum Forward Bias

Safe Operating Area

CURRENT LIMIT SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25

C (SINGLE PULSE)

, COLLECTOR CURRENT (AMPS)

0.1 2 3 50

0.3

0.2

TJ = 150°C

1 ms

5 ms

100 µs

0.5

5 10020

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on T

J(pk)

= 150_C; TC is variable depending on conditions. Secondary breakdown pulse limits are valid for duty cycles to 10% provided T

J(pk)

< 150_C. T

J(pk)

may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown.

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