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1
Motorola Bipolar Power Transistor Device Data
For Isolated Package Applications
Designed for general–purpose amplifiers and switching applications, where the
mounting surface of the device is required to be electrically isolated from the heatsink
or chassis.
• Electrically Similar to the Popular TIP122 and TIP127
• 100 V
CEO(sus)
• 5 A Rated Collector Current
• No Isolating Washers Required
• Reduced System Cost
• High DC Current Gain — 2000 (Min) @ IC = 3 Adc
• UL Recognized, File #E69369, to 3500 V
RMS
Isolation
Collector–Emitter Voltage
RMS Isolation Voltage (1) Test No. 1 Per Fig. 14
(for 1 sec, R.H. < 30%, Test No. 2 Per Fig. 15
TA = 25_C) Test No. 3 Per Fig. 16
Collector Current — Continuous
Peak
Total Power Dissipation* @ TC = 25_C
Derate above 25_C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case*
Lead Temperature for Soldering Purpose
_
C
*Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on
a heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs.
(1) Proper strike and creepage distance must be provided.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MF122/D
COMPLEMENTARY
SILICON
POWER DARLINGTONS
5 AMPERES
100 VOLTS
30 WATTS
CASE 221D–02
TO–220 TYPE
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Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Collector–Emitter Sustaining Voltage (1)
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)
DC Current Gain (IC = 0.5 Adc, VCE = 3 Vdc)
DC Current Gain (IC = 3 Adc, VCE = 3 Vdc)
Collector–Emitter Saturation Voltage (IC = 3 Adc, IB = 12 mAdc)
Collector–Emitter Saturation Voltage (IC = 5 Adc, IB = 20 mAdc)
Base–Emitter On Voltage (IC = 3 Adc, VCE = 3 Vdc)
Small–Signal Current Gain (IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz)
Output Capacitance MJF127
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJF122
pF
(1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2%.
Figure 1. Switching Times Test Circuit
VCC = 30 V
IC/IB = 250
IB1 = I
B2
TJ = 25
°
C
0.1 0.7 100.5
0.3
2 5
5
IC, COLLECTOR CURRENT (AMP)
td @ V
BE(off)
= 0 V
t, TIME ( s)
µ
2
1
0.5
0.2
0.1
0.05
Figure 2. Typical Switching Times
t
s
t
f
0.3
3
0.2
1
0.07
0.7
3 7
PNP
NPN
≈
120
≈
8 k
V
2
APPROX.
+8 V
V
1
APPROX.
–12 V
25
µ
s
R
B
51
D
1
+4 V
V
CC
–30 V
R
C
SCOPE
TUT
tr, tf
≤
10 ns
DUTY CYCLE = 1%
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPES, e.g.,
1N5825 USED ABOVE IB
≈
100 mA
MSD6100 USED BELOW IB
≈
100 mA
t
r
0
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Motorola Bipolar Power Transistor Device Data
P
D
, POWER DISSIPATION (WATTS)
0
80
60
40
20
4
3
2
1
TAT
C
0
Figure 3. Maximum Power Derating
T, TEMPERATURE (°C)
40 60 100 120 16080 140
T
C
20
t, TIME (ms)
0.01
0.1 0.5 10 20 50 100 200 500 5K 10K1 52
1
0.2
0.1
0.05
r(t), TRANSIENT THERMAL
SINGLE PULSE
R
θ
JC(t)
= r(t) R
θ
JC
T
J(pk)
– TC = P
(pk)
R
θ
JC
(t)
RESISTANCE (NORMALIZED)
Figure 4. Thermal Response
0.5
0.3
0.03
0.02
0.2
1K 2K30 3003
0.3
3K
T
A
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. Maximum Forward Bias
Safe Operating Area
1
10
1
30
CURRENT LIMIT
SECONDARY BREAKDOWN
LIMIT
THERMAL LIMIT @
TC = 25
°
C (SINGLE PULSE)
I
C
, COLLECTOR CURRENT (AMPS)
0.1
2 3 50
3
0.3
10
0.2
dc
TJ = 150°C
1 ms
5 ms
100 µs
2
5
0.5
5 10020
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150_C; TC is
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided T
J(pk)
< 150_C. T
J(pk)
may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by secondary breakdown.