Motorola MGP4N80E Datasheet
1
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Its new 600 V IGBT technology is
specifically suited for applications requiring both a high temperature short circuit capability and a low V
CE(on)
. It also provides fast
switching characteristics and results in efficient operation at high
frequencies. This new E–series introduces an Energy–efficient,
ESD protected, and short circuit rugged device.
• Industry Standard TO–220 Package
• High Speed: E
off
= 55 mJ/A typical at 125°C
• High Voltage Short Circuit Capability – 10 ms minimum at 125°C, 400 V
• Low On–Voltage 2.0 V typical at 3.0 A, 125°C
• Robust High Voltage Termination
• ESD Protection Gate–Emitter Zener Diodes
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector–Emitter Voltage V
CES
600 Vdc
Collector–Gate Voltage (RGE = 1.0 MΩ) V
CGR
600 Vdc
Gate–Emitter Voltage — Continuous V
GE
±20 Vdc
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
I
C25
I
C90
I
CM
6.0
4.0
8.0
Adc
Apk
Total Power Dissipation @ TC = 25°C
Derate above 25°C
P
D
80
0.64
Watts
W/°C
Operating and Storage Junction Temperature Range TJ, T
stg
–55 to 150 °C
Short Circuit Withstand Time
(VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)
t
sc
10
m
s
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
R
θJC
R
θJA
2.0
65
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds T
L
260 °C
Mounting Torque, 6–32 or M3 screw
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
Order this document
by MGP4N60E/D
SEMICONDUCTOR TECHNICAL DATA
IGBT IN TO–220
4.0 A @ 90°C
6.0 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
LOW ON–VOLTAGE
CASE 221A–06
TO–220AB
C
E
G
G
C
E
Motorola, Inc. 1997
MGP4N60E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 250 µAdc)
T emperature Coef ficient (Positive)
B
VCES
600
—
—
870
—
—
Vdc
mV/°C
Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc) B
VECS
15 — — Vdc
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc)
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)
I
CES
—
—
—
—
10
200
µAdc
Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) I
GES
— — 50
m
Adc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 1.5 Adc)
(VGE = 15 Vdc, IC = 1.5 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 3.0 Adc, TJ = 125°C)
V
CE(on)
—
—
—
1.6
1.5
2.0
1.9
—
2.4
Vdc
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
V
GE(th)
4.0
—
6.0
10
8.0
—
Vdc
mV/°C
Forward Transconductance (VCE = 10 Vdc, IC = 3.0 Adc) g
fe
— 1.8 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ies
— 342 — pF
Output Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz
)
C
oes
— 40 —
Transfer Capacitance
f = 1.0 MHz)
C
res
— 3.0 —
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
t
d(on)
— 34 — ns
Rise Time
(VCC = 360 Vdc, IC = 3.0 Adc,
t
r
— 30 —
Turn–Off Delay Time
VGE = 15 Vdc, L = 300 mH,
R
= 20 Ω, T
= 25°C
)
t
d(off)
— 36 —
Fall Time
R
G
= 20 Ω,
T
J
=
25 C)
Energy losses include “tail”
t
f
— 216 —
Turn–Off Switching Loss E
off
— 0.1 — mJ
Turn–On Delay Time
t
d(on)
— 33 — ns
Rise Time
(VCC = 360 Vdc, IC = 3.0 Adc,
t
r
— 32 —
Turn–Off Delay Time
VGE = 15 Vdc, L = 300 mH,
R
= 20 Ω, T
= 125°C
)
t
d(off)
— 56 —
Fall Time
R
G
= 20 Ω,
T
J
=
125 C)
Energy losses include “tail”
t
f
— 340 —
Turn–Off Switching Loss E
off
— 0.165 — mJ
Gate Charge
Q
T
— 18.1 — nC
(VCC = 360 Vdc, IC = 3.0 Adc,
V
= 15 Vdc
)
Q
1
— 3.8 —
V
GE
= 15
Vdc)
Q
2
— 7.8 —
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25″ from package to emitter bond pad)
L
E
— 7.5 —
nH
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
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