MOTOROLA MGP20N60U Datasheet
SEMICONDUCTOR TECHNICAL DATA
N–Channel Enhancement–Mode Silicon Gate
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by MGP20N60U/D
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. It also provides low on–voltage which
results in efficient operation at high current.
• Industry Standard TO–220 Package
• High Speed E
: 63 J/A typical at 125°C
off
IGBT IN TO–220
20 A @ 90°C
31 A @ 25°C
600 VOL TS
VERY LOW
ON–VOLTAGE
• Low On–Voltage – 1.7 V typical at 10 A, 125°C
• Robust High Voltage Termination
• ESD Protection Gate–Emitter Zener Diodes
C
G
G
C
E
E
MAXIMUM RATINGS
Collector–Emitter Voltage V
Collector–Gate Voltage (RGE = 1.0 MΩ) V
Gate–Emitter Voltage — Continuous V
Collector Current — Continuous @ TC = 25°C
Collector Current — Continuous @ TC = 90°C
Collector Current — Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range TJ, T
Thermal Resistance — Junction to Case – IGBT
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds T
Mounting Torque, 6–32 or M3 screw
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves —representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
(TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
CES
CGR
I
C25
I
C90
I
CM
P
R
θJC
R
θJA
GE
D
stg
L
CASE 221A–09
STYLE 9
TO–220AB
600 Vdc
600 Vdc
±20 Vdc
31
20
62
112
0.89
–55 to 150 °C
1.12
65
260 °C
10 lbfSin (1.13 NSm)
Adc
Apk
Watts
W/°C
°C/W
REV 1
Motorola IGBT Device Data
Motorola, Inc. 1998
1
MGP20N60U
)
f = 1.0 MHz)
)
R
G
Ω)
)
R
G
T
J
125 C)
)
V
GE
Vdc)
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25 µAdc)
T emperature Coef ficient (Positive)
Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc) V
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc)
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) I
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 5.0 Adc)
(VGE = 15 Vdc, IC = 5.0 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 10 Adc)
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
Forward Transconductance (VCE = 10 Vdc, IC = 10 Adc) g
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss E
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss E
Gate Charge
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25″ from package to emitter bond pad)
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(T
= 25°C unless otherwise noted)
J
Characteristic
(VCE = 25 Vdc, VGE = 0 Vdc,
(VCC = 360 Vdc, IC = 10 Adc,
VGE = 15 Vdc, L = 300 mH,
Energy losses include “tail”
(VCC = 360 Vdc, IC = 10 Adc,
VGE = 15 Vdc, L = 300 mH,
Energy losses include “tail”
(VCC = 360 Vdc, IC = 10 Adc,
R
= 20 Ω, T
= 20 Ω,
f = 1.0 MHz
R
= 20 Ω
= 20
V
= 15 Vdc
= 15
= 125°C
=
Symbol Min Typ Max Unit
V
(BR)CES
(BR)ECS
I
CES
GES
V
CE(on)
V
GE(th)
fe
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
off
t
d(on)
t
r
t
d(off)
t
f
off
Q
T
Q
1
Q
2
L
E
600
—
15 — — Vdc
—
—
— — 50 µAdc
—
—
—
3.0
—
— 7.0 — Mhos
— 1060 — pF
— 99 —
— 15 —
— 43 — ns
— 45 —
— 144 —
— 175 —
— 340 —
— 43 — ns
— 56 —
— 235 —
— 220 —
— 625 —
— 57 — nC
— 12 —
— 25 —
— 7.5 —
—
870
—
—
1.4
1.3
1.7
5.0
10
—
—
10
200
1.7
—
2.0
7.0
—
mV/°C
mV/°C
Vdc
µAdc
Vdc
Vdc
m
J
m
J
nH
2
Motorola IGBT Device Data
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