MOTOROLA MGP15N35CL, MGB15N35CLT4 Datasheet
MGP15N35CL,
MGB15N35CL,
MGC15N35CL
Internally Clamped
N-Channel IGBT
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over–Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
• Gate–Emitter ESD Protection
• T emperature Compensated Gate–Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Optional Gate Resistor (R
)
G
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N–CHANNEL IGBT
15 A, 350 V
V
CE(on)
G
= 1.8 V MAX
C
R
G
R
GE
E
MAXIMUM RATINGS (T
Rating
Collector–Emitter Voltage V
Collector–Gate Voltage V
Gate–Emitter Voltage V
Collector Current–Continuous
@ TC = 25°C
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Temperature
Range
= 25°C unless otherwise noted)
J
Symbol Value Unit
CES
CER
P
TJ, T
GE
I
C
D
stg
380 V
380 V
22 V
15 A
136
1.0
–55 to
175
DC
DC
DC
DC
Watts
W/°C
°C
MARKING
DIAGRAMS
TO–220
CASE 221A
STYLE 9
G
C
E
D2PAK
CASE 418B
STYLE 3
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W= Work Week
ORDERING INFORMATION
Device Package Shipping
MGP15N35CL TO–220 50 Units/Rail
MGB15N35CL T4 D2PAK 800 Tape & Reel
MGC15N35CL Die Options
GP15N35CL
ALYYWW
GB15N35CL
ALYYWW
Not Applicable
Semiconductor Components Industries, LLC, 2000
April, 2000 – Rev. 0
1 Publication Order Number:
MGP15N35CL/D
MGP15N35CL, MGB15N35CL, MGC15N35CL
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TJ t150°C)
Characteristic Symbol Value Unit
Single Pulse Collector–to–Emitter Avalanche Energy
VCC = 50 V, VGE = 5 V, Pk IL = 14.2 A, L = 3 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5 V, Pk IL = 10 A, L = 3 mH, Starting TJ = 150°C
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Ambient TO–220 R
D2PAK R
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds T
E
AS
θJC
θJA
θJA
L
300
mJ
150
1.0 °C/W
62.5
50
275 °C
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
C
Symbol Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Clamp V oltage BV
Zero Gate Voltage Collector Current I
Reverse Collector–Emitter Leakage Current I
Gate–Emitter Clamp Voltage BV
Gate–Emitter Leakage Current I
Gate Resistor (Optional) R
Gate Emitter Resistor R
CES
CES
ECS
GES
GES
G
GE
IC = 2 mA
TJ = –40°C to 175°C
VCE = 300 V,
VGE = 0, TJ = 25°C
VCE = 300 V,
VGE = 0, TJ = 150°C
VCE = –24 V – – 1.0 mA
IG = 5 mA 17 – 22 V
VGE = 10 V 384 – 1000 µA
– – 70 –
– 10 – 26
320 350 380 V
– – 40
– – 200
ON CHARACTERISTICS*
Gate Threshold Voltage V
Threshold Temperature Coefficient (Negative) – – – 4.4 – mV/°C
Collector–to–Emitter On–Voltage V
Collector–to–Emitter On–Voltage V
Forward Transconductance gfs VCE = 5 V, IC = 6 A 8.0 15 – Mhos
GE(th)
CE(on)
CE(on)
IC = 1 mA
VGE = V
IC = 6 A, VGE = 4 V – – 1.8 V
VGE = 4.5 V,
TJ = 150°C
CE
IC = 10 A,
1.0 1.8 2.1 V
– – 1.8 V
DYNAMIC CHARACTERISTICS
Input Capacitance C
Output Capacitance C
Transfer Capacitance C
*Pulse Test: Pulse Width v 300 µS, Duty Cycle v 2%.
ISS
OSS
RSS
VCC = 15 V – 1000 –
VGE = 0 V – 130 –
f = 1 MHz – 5.0 –
µA
DC
DC
DC
DC
Ω
kΩ
DC
DC
DC
pF
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MGP15N35CL, MGB15N35CL, MGC15N35CL
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
C
SWITCHING CHARACTERISTICS*
Turn–Off Delay Time t
Fall Time t
Turn–On Delay Time t
Rise Time t
Gate Charge
*Pulse Test: Pulse Width v 300 µS, Duty Cycle v 2%.
Symbol Test Conditions Min Typ Max Unit
d(off)
f
d(on)
r
Q
T
Q
1
Q
2
VCC = 300 V,
IC = 10 A
RG = 1 kΩ,
L = 300 µH
VCC = 10 V,
IC = 6.5 A
RG = 1 kΩ,
RL = 1 Ω
VCC = 300 V – TBD –
IC = 15 A – TBD –
VGE = 5 V – TBD –
– 13 –
– 6.0 –
– 1.0 –
– 5.0 –
µSec
µSec
nC
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