Motorola MDC5001T1 Datasheet

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SEMICONDUCTOR TECHNICAL DATA

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by MDC5001T1/D

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• Maintains Stable Bias Current in N–Type Discrete Bipolar Junction and Field
Effect Transistors

• Provides Stable Bias Using a Single Component Without Use of Emitter Ballast
and Bypass Components

• Operates Over a Wide Range of Supply Voltages Down to 1.8 Vdc

• Reduces Bias Current Variation Due to Temperature and Unit–to–Unit Parametric

Changes

• Consumes t 0.5 mW at VCC = 2.75 V

• Active High Enable is CMOS Compatible

This device provides a reference voltage and acts as a DC feedback element
around an external discrete, NPN BJT or N–Channel FET. It allows the external
transistor to have its emitter/source directly grounded and still operate with a stable
collector/drain DC current. It is primarily intended to stabilize the bias of discrete RF
stages operating from a low voltage regulated supply , but can also be used to stabilize
the bias current of any linear stage in order to eliminate emitter/source bypassing and
achieve tighter bias regulation over temperature and unit variations. The “ENABLE”
polarity nulls internal current, Enable current, and RF transistor current in “ST ANDBY .”
This device is intended to replace a circuit of three to six discrete components.

The combination of low supply voltage, low quiescent current drain, and small
package make the MDC5001T1 ideal for portable communications applications such
as:

• Cellular Telephones

• Pagers

• PCN/PCS Portables

• GPS Receivers

• PCMCIA RF Modems

• Cordless Phones

• Broadband and Multiband Transceivers and Other Portable Wireless Products

MAXIMUM RATINGS

Rating Symbol Value Unit

Power Supply Voltage V
Ambient Operating Temperature Range T
Storage Temperature Range T
Junction Temperature T
Collector Emitter Voltage (Q2) V
Enable Voltage (Pin 5) V

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Power Dissipation

(FR–5 PCB of 1″ × 0.75″ × 0.062″, TA = 25°C)
Derate above 25°C

Thermal Resistance, Junction to Ambient R

SMALLBLOCK is a trademark of Motorola, Inc.

CC

A

stg

J

CEO

ENBL

P

D

θJA

15 Vdc

–40 to +85 °C

–65 to +150 °C

150 °C
–15 V

V

CC

150

1.2

833 °C/W

mW

mW/°C

V



SILICON

SMALLBLOCK

INTEGRATED CIRCUIT

6

5

4

1

2

3

CASE 419B–01, Style 19

SOT–363

INTERNAL CIRCUIT DIAGRAM

VCC (4)

R1

Q1

R2

V

V

ENBL

(5)

R3

R4

R5

Q4

R6

GND (2) and (3)

Q2

I

ref

out

(6)

(1)

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

 Motorola, Inc. 1997

1

MDC5001T1

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Min Typ Max Unit

Recommended Operating Supply Voltage V
Power Supply Current (VCC = 2.75 V)

V

, I

are unterminated

ref

out

See Figure 8

Q2 Collector Emitter Breakdown Voltage

(IC2 = 10 µA, IB2 = 0)

Reference Voltage (V

(I

= 30 µA)

out

(I

= 150 µA)

out

See Figure 1

Reference Voltage (V

–40°C ≤ TA ≤ +85°C)
VCC Pulse Width = 10 mS, Duty Cycle = 1%
(I

= 10 µA)

out

(I

= 30 µA)

out

(I

= 100 µA)

out

See Figures 2 and 11

The following SPICE models are provided as a convenience to the user and every effort has been made to insure their accuracy.

However, no responsibility for their accuracy is assumed by Motorola.

= VCC = 2.75 V, V

ENBL

= VCC = 2.75 V, V

ENBL

(TA = 25°C unless otherwise noted)

= 0.7 V)

out

= 0.7 V,

out

CC

I

CC

V

(BR)CEO2

V

ref

D

V

ref

1.8 2.75 10 Volts
— 130 200 µA

15 Volts

2.050

2.110

2.075

2.135

±5.0

±15
±25

2.100

2.160

±10
±30
±50

Volts

mV

.MODEL Q4 NPN

BF = 136
BR = 0.2
CJC = 318.6 f
CJE = 569.2 f
CJS = 1.9 p
EG = 1.215
FC = 0.5
IKF = 24.41 m
IKR = 0.25
IRB = 0.0004
IS = 256E–18
ISC = 1 f
ISE = 500E–18
ITF = 0.9018
MJC = 0.2161
MJE = 0.3373
MJS = 0.13
NC = 1.09

NE = 1.6
NF = 1.005
RB = 140
RBM = 70
RC = 180
RE = 1.6
TF = 553.6 p
TR = 10 n
VAF = 267.6
VAR = 12
VJC = 0.4172
VJE = 0.7245
VJS = 0.39
VTF = 10
XTB = 1.5
XTF = 2.077
XTI = 3

.MODEL Q1, Q2 PNP

BF = 87
BR = 0.6
CJC = 800E–15
CJE = 46E–15
EG = 1.215
FC = 0.5
IKF = 3.8E–04
IKR = 2.0
IRB = 0.9E–3
IS = 1.027E–15
ISC = 10E–18
ISE = 1.8E–15
ITF = 2E–3
MJC = 0.2161
MJE = 0.2161
NC = 0.8
NE = 1.38
NF = 1.015

NK = 0.5
NR = 1.0
RB = 720
RBM = 470
RC = 180
RE = 26
TF = 15E–9
TR = 50E–09
VAF = 54.93
VAR = 20
VAR = 20
VJC = 0.4172
VJE = 0.4172
VTF = 10
XTB = 1.5
XTF = 2.0
XTI = 3

RESISTOR VALUES

R1 = 12 K
R2 = 6 K
R3 = 3.4 K
R4 = 12 K
R5 = 20 K
R6 = 40 K

These models can be retrieved
electronically by accessing the
Motorola Web page at
http://design–net.sps.mot.com/models
and searching the section on
SMALLBLOCK models

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL OPEN LOOP CHARACTERISTICS

m

= 1000 A
I

out

m

= 500 A
I

out

m

= 100 A
I

out

MDC5001T1

m

= 10 A

out

I

109876543210

CC

V , SUPPLY VOLTAGE (Vdc)

CC

C

= V

°

= 25

ENBL

J

V

T

8

7

6

5

4

ref

V (Vdc)

3

2

1

0

Figure 1. V

versus VCC @ I

ref

Motorola Small–Signal Transistors, FETs and Diodes Device Data

out

3