Motorola MDC3205 Datasheet
SEMICONDUCTOR TECHNICAL DATA
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by MDC3205/D
• Optimized to Switch 3 V to 5 V Relays from a 5 V Rail
• Compatible with “TX’’ and “TQ’’ Series Telecom Relays Rated up to
625 mW at 3 V to 5 V
• Features Low Input Drive Current
• Internal Zener Clamp Routes Induced Current to Ground Rather Than
Back to Supply
• Guaranteed Off State with No Input Connection
• Supports Large Systems with Minimal Off–State Leakage
• ESD Resistant in Accordance with the 2000 V Human Body Model
• Provides a Robust Driver Interface Between Relay Coil and Sensitive
Logic Circuits
Applications include:
• Telecom Line Cards and Telephony
• Industrial Controls
• Security Systems
• Appliances and White Goods
• Automated Test Equipment
• Automotive Controls
This device is intended to replace an array of three to six discrete
components with an integrated part. It can be used to switch other 3 to 5
Vdc Inductive Loads such as solenoids and small DC motors.
RELAY/SOLENOID DRIVER
SILICON MONOLITHIC
CIRCUIT BLOCK
CASE 29–04, STYLE 14
INTERNAL CIRCUIT DIAGRAM
V
1.0 k
in
(3)
33 k
TO–92
V
GND (1)
out
(2)
6.8 V
MAXIMUM RATINGS
Rating Symbol Value Unit
Power Supply Voltage V
Recommended Operating Supply Voltage V
Input Voltage V
Reverse Input Voltage V
Output Sink Current Continuous I
Junction Temperature T
Operating Ambient Temperature Range T
Storage Temperature Range T
in(fwd)
in(rev)
CC
CC
O
J
A
stg
6.0 Vdc
2.0–5.5 Vdc
6.0 Vdc
–0.5 Vdc
300 mA
150 °C
–40 to +85 °C
–65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
Derate above 25°C
Thermal Resistance Junction to Ambient
1. FR–5 PCB of 1″ x 0.75″ x 0.062″, TA = 25°C
This document contains information on a new product. Specifications and information herein are subject to change without notice.
(1)
P
D
R
q
JA
625 mW
200 °C/W
REV 1
Motorola, Inc. 1997
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
MDC3205
ELECTRICAL CHARACTERISTICS
Characteristic
(TA = 25°C unless otherwise noted)
OFF CHARACTERISTICS
Output Zener Breakdown Voltage
(@ IT = 10 mA Pulse)
Output Leakage Current @ 0 Input Voltage
(V
= 5.5 Vdc, Vin = O.C., TA = 25°C)
out
(V
= 5.5 Vdc, Vin = O.C., TA = 85°C)
out
ON CHARACTERISTICS
Input Bias Current @ Vin = 4.0 Vdc
(IO = 250 mA, V
(correlated to a measurement @ 25°C)
Output Saturation Voltage
(IO = 250 mA, Vin = 4.0 Vdc, TA = –40°C)
(correlated to a measurement @ 25°C)
Output Sink Current Continuous
(TA = –40°C, VCE = 0.4 Vdc, Vin = 4.0 Vdc )
(correlated to a measurement @ 25°C)
= 0.4 Vdc, TA = –40°C)
out
TYPICAL APPLICATION–DEPENDENT SWITCHING PERFORMANCE
SWITCHING CHARACTERISTICS
Characteristic Symbol V
Propagation Delay Times:
High to Low Propagation Delay; Figures 1, 2 (5.0 V 74HC04)
Low to High Propagation Delay; Figures 1, 2 (5.0 V 74HC04)
Symbol Min Typ Max Unit
t
PHL
t
PLH
V
(BRout)
V
(–BRout)
I
OO
I
in
I
C(on)
6.4
—
—
—
— 2.5 —
— 0.2 0.4
250 — —
CC
5.5
5.5
Min Typ Max Units
—
—
6.8
–0.7
—
—
7.2
—
5.0
30
55
430
V
µA
mAdc
Vdc
mA
ns
—
—
High to Low Propagation Delay; Figures 1, 3 (3.0 V 74HC04)
Low to High Propagation Delay; Figures 1, 3 (3.0 V 74HC04)
High to Low Propagation Delay; Figures 1, 4 (5.0 V 74LS04)
Low to High Propagation Delay; Figures 1, 4 (5.0 V 74LS04)
Transition Times:
Fall Time; Figures 1, 2 (5.0 V 74HC04)
Rise Time; Figures 1, 2 (5.0 V 74HC04)
Fall Time; Figures 1, 3 (3.0 V 74HC04)
Rise Time; Figures 1, 3 (3.0 V 74HC04)
Fall Time; Figures 1, 4 (5.0 V 74LS04)
Rise Time; Figures 1, 4 (5.0 V 74LS04)
Input Slew Rate
1. Minimum input slew rate must be followed to avoid overdissipating the device.
(1)
t
f
90%
50%
V
in
10%
t
PLH
t
THL
90%
50%
10%
V
out
t
PHL
t
PLH
t
PHL
t
PLH
∆V/∆t in 5.5 TBD — — V/ms
t
t
t
t
t
t
f
r
f
r
f
r
t
TLH
t
PHL
5.5
5.5
5.5
5.5
5.5
5.5
5.5
5.5
5.5
5.5
t
r
—
—
—
—
—
—
—
—
—
—
V
CC
GND
V
Z
V
CC
GND
85
315
55
2385
45
160
70
195
45
2400
—
—
—
—
ns
—
—
—
—
—
—
Figure 1. Switching Waveforms
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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