Motorola MDC3105LT1 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
• Optimized to Switch 3 V to 5 V Relays from a 5 V Rail
• Compatible with “TX’’ and “TQ’’ Series Telecom Relays Rated up to
300 mW at 3 V to 5 V
• Features Low Input Drive Current
• Internal Zener Clamp Routes Induced Current to Ground Rather Than Back
to Supply
• Guaranteed Off State with No Input Connection
• Supports Large Systems with Minimal Off–State Leakage
• ESD Resistant in Accordance with the 2000 V Human Body Model
• Provides a Robust Driver Interface Between Relay Coil and Sensitive
Logic Circuits
Applications include:
• Telecom Line Cards and Telephony
• Industrial Controls
• Security Systems
• Appliances and White Goods
• Automated Test Equipment
• Automotive Controls
This device is intended to replace an array of three to six discrete
components with an integrated SMT part. It is available in a SOT–23
package. It can be used to switch other 3 to 5 Vdc Inductive Loads such
as solenoids and small DC motors.
MAXIMUM RATINGS
Rating Symbol Value Unit
Power Supply Voltage V
CC
6.0 Vdc
Recommended Operating Supply Voltage V
CC
2.0–5.5 Vdc
Input Voltage V
in(fwd)
6.0 Vdc
Reverse Input Voltage V
in(rev)
–0.5 Vdc
Output Sink Current Continuous I
O
300 mA
Junction Temperature T
J
150 °C
Operating Ambient Temperature Range T
A
–40 to +85 °C
Storage Temperature Range T
stg
–65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
(1)
Derate above 25°C
P
D
225 mW
Thermal Resistance Junction to Ambient R
q
JA
556 °C/W
1. FR–5 PCB of 1″ x 0.75″ x 0.062″, TA = 25°C
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Order this document
by MDC3105LT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
RELAY/SOLENOID DRIVER
SILICON MONOLITHIC
CIRCUIT BLOCK
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
1
2
3
INTERNAL CIRCUIT DIAGRAM
V
out
(3)
V
in
(1)
1.0 k
33 k
6.8 V
GND (2)
Motorola, Inc. 1996
MDC3105LT1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Output Zener Breakdown Voltage
(@ IT = 10 mA Pulse)
V
(BRout)
V
(–BRout)
6.4
—
6.8
–0.7
7.2
—
V
Output Leakage Current @ 0 Input Voltage
(V
out
= 5.5 Vdc, Vin = O.C., TA = 25°C)
(V
out
= 5.5 Vdc, Vin = O.C., TA = 85°C)
I
OO
—
—
—
—
5.0
30
µA
ON CHARACTERISTICS
Input Bias Current @ Vin = 4.0 Vdc
(IO = 250 mA, V
out
= 0.4 Vdc, TA = –40°C)
(correlated to a measurement @ 25°C)
I
in
— 2.5 —
mAdc
Output Saturation Voltage
(IO = 250 mA, Vin = 4.0 Vdc, TA = –40°C)
(correlated to a measurement @ 25°C)
— 0.2 0.4
Vdc
Output Sink Current Continuous
(TA = –40°C, VCE = 0.4 Vdc, Vin = 4.0 Vdc )
(correlated to a measurement @ 25°C)
I
C(on)
250 — —
mA
TYPICAL APPLICATION–DEPENDENT SWITCHING PERFORMANCE
SWITCHING CHARACTERISTICS
Characteristic Symbol V
CC
Min Typ Max Units
Propagation Delay Times:
High to Low Propagation Delay; Figures 1, 2 (5.0 V 74HC04)
Low to High Propagation Delay; Figures 1, 2 (5.0 V 74HC04)
High to Low Propagation Delay; Figures 1, 3 (3.0 V 74HC04)
Low to High Propagation Delay; Figures 1, 3 (3.0 V 74HC04)
High to Low Propagation Delay; Figures 1, 4 (5.0 V 74LS04)
Low to High Propagation Delay; Figures 1, 4 (5.0 V 74LS04)
t
PHL
t
PLH
t
PHL
t
PLH
t
PHL
t
PLH
5.5
5.5
5.5
5.5
5.5
5.5
—
—
—
—
—
—
55
430
85
315
55
2385
—
—
—
—
—
—
ns
Transition Times:
Fall Time; Figures 1, 2 (5.0 V 74HC04)
Rise Time; Figures 1, 2 (5.0 V 74HC04)
Fall Time; Figures 1, 3 (3.0 V 74HC04)
Rise Time; Figures 1, 3 (3.0 V 74HC04)
Fall Time; Figures 1, 4 (5.0 V 74LS04)
Rise Time; Figures 1, 4 (5.0 V 74LS04)
t
f
t
r
t
f
t
r
t
f
t
r
5.5
5.5
5.5
5.5
5.5
5.5
—
—
—
—
—
—
45
160
70
195
45
2400
—
—
—
—
—
—
ns
Input Slew Rate
(1)
∆V/∆t in 5.5 TBD — — V/ms
1. Minimum input slew rate must be followed to avoid overdissipating the device.
Figure 1. Switching Waveforms
V
out
GND
V
in
GND
V
Z
V
CC
V
CC
t
THL
t
TLH
t
f
t
r
t
PLH
t
PHL
90%
50%
10%
90%
50%
10%
MDC3105LT1
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 2. A 3.0–V, 200–mW Dual Coil Latching Relay Application
with 5.0 V–HCMOS Interface
Figure 3. A 3.0–V, 200–mW Dual Coil Latching Relay Application
with 3.0 V–HCMOS Interface
+4.5 ≤ VCC ≤ +5.5 Vdc
+
V
out
(3)
74HC04 OR
EQUIVALENT
+
AROMAT
TX2–L2–3 V
Vin (1)
GND (2)
V
out
(3)
Vin (1)
GND (2)
74HC04 OR
EQUIVALENT
1 k
33 k
6.8 V
33 k
6.8 V
1 k
MDC3105LT1 MDC3105LT1
+4.5 ≤ VCC ≤ +5.5 Vdc
+
V
out
(3)
74HC04 OR
EQUIVALENT
+
AROMAT
TX2–L2–3 V
Vin (1)
GND (2)
V
out
(3)
Vin (1)
GND (2)
74HC04 OR
EQUIVALENT
1 k
33 k
6.8 V
33 k
6.8 V
1 k
MDC3105LT1 MDC3105LT1
+3.0 ≤ VDD ≤ +3.75 Vdc
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