Motorola MCR218-10, MCR218-8, MCR218-6, MCR218-3, MCR218-4 Datasheet

1

Motorola Thyristor Device Data

Thyristors

Silicon-Controlled Rectifiers

. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supplies; or wherever half-wave silicon gate-controlled,
solid-state devices are needed.

• Glass-Passivated Junctions

• Blocking Voltage to 800 Volts

• TO-220 Construction — Low Thermal Resistance, High Heat Dissipation and

Durability

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted.)

Rating

Symbol Value Unit

Peak Repetitive Forward and Reverse Voltage

(1)

(TJ = 25 to 125°C, Gate Open) MCR218-2

MCR218-3
MCR218-4
MCR218-6
MCR218-8
MCR218-10

V

DRM

V

RRM

50
100
200
400
600
800

Volts

Forward Current RMS

(All Conduction Angles)

I

T(RMS)

8 Amps

Peak Forward Surge Current

(1/2 Cycle, Sine Wave, 60 Hz)

I

TSM

80 Amps

Circuit Fusing Considerations

(t = 8.3 ms)

I2t 26 A2s

Forward Peak Gate Power P

GM

5 Watts

Forward Average Gate Power P

G(AV)

0.5 Watt

Forward Peak Gate Current I

GM

2 Amps

Operating Junction Temperature Range T

J

–40 to +125 °C

Storage Temperature Range T

stg

–40 to +150 °C

1. V

DRM

and V

RRM

for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.

Order this document

by MCR218/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

 Motorola, Inc. 1995

MCR218

Series

CASE 221A-04

(TO-220AB)

STYLE 3

SCRs

8 AMPERES RMS

50 thru 800 VOLTS

K

G

A

 

2 Motorola Thyristor Device Data

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

θJC

2 °C/W

ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

Peak Forward or Reverse Blocking Current

(VAK = Rated V

DRM

or V

RRM

, Gate Open) TJ = 25°C

TJ = 125°C

I

DRM

, I

RRM

—
—

—
—

10

2

µA

mA

Peak On-State Voltage

(1)

(ITM = 16 A Peak)

V

TM

— 1.5 1.8 Volts

Gate Trigger Current (Continuous dc)

(VD = 12 V, RL = 100 Ohms)

I

GT

— 10 25 mA

Gate Trigger Voltage (Continuous dc)

(VD = 12 V, RL = 100 Ohms)
(Rated V

DRM

, RL = 1000 Ohms, TJ = 125°C)

V

GT

—

0.2

—
—

1.5
—

Volts

Holding Current

(Anode Voltage = 24 Vdc, Peak Initiating On-State Current = 0.5 A,

0.1 to 10 ms Pulse, Gate Trigger Source = 7 V, 20 Ohms)

I

H

— 16 30 mA

Critical Rate-of-Rise of Off-State Voltage

(VD = Rated V

DRM

, Exponential Waveform, Gate Open, TJ = 125°C)

dv/dt — 100 — V/µs

1. Pulse Test: Pulse Width = 1 ms, Duty Cycle p 2%.

60

°

7.06.05.04.03.02.01.0 8.0

3.0

6.0

9.0

α

= Conduction Angle

12

15

0.4

0.5

0.7

0.9

1.0

1.5

2.0

40

3.0

1401201008060–40 0 20–20

I

T(AV)

, AVERAGE ON-STATE FORWARD CURRENT (AMPS)

α

= CONDUCTION ANGLE

87654321

85

95

75

105

115

0

α

α

= 30

°

60

°

I

T(AV)

, AVG. ON-STATE CURRENT (AMPS)

FIGURE 2 — ON-STATE POWER DISSIPATION

0

90

°

120

°

180

°

dc

TJ, JUNCTION TEMPERATURE (°C)

FIGURE 3 — NORMALIZED GATE TRIGGER CURRENT

0.3
–60

VD = 12 Vdc

FIGURE 1 — CURRENT DERATING

0

dc

α

= 30

°

α

120

°

90

°

125

T , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)

C

°

P , AVERAGE ON-STATE POWER DISSIPATION

(AV)

(WATTS)

I , NORMALIZED GATE TRIGGER CURRENT (mA)

GT

180

°