MOTOROLA MCR218 Technical data

MOTOROLAMCR218/D

SEMICONDUCTOR TECHNICAL DATA

Order this document by MCR218/D

Thyristors

Silicon-Controlled Rectifiers

. . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed.

•Glass-Passivated Junctions

•Blocking Voltage to 800 Volts

•TO-220 Construction Ð Low Thermal Resistance, High Heat Dissipation and Durability

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

MCR218

Series

SCRs

8 AMPERES RMS

200 thru 800 VOLTS

G

A K

CASE 221A-09 (TO-220AB)

STYLE 3

Rating		Symbol	Value	Unit
Peak Repetitive Forward and Reverse Voltage(1)		V		Volts
(TJ = 25 to 125°C, Gate Open)		DRM
	MCR218±4	VRRM	200
	MCR218±6		400
	MCR218±8		600
	MCR218±10		800
Forward Current RMS		IT(RMS)	8	Amps
(All Conduction Angles)
Peak Forward Surge Current		ITSM	80	Amps
(1/2 Cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations		I2t	26	A2s
(t = 8.3 ms)
Forward Peak Gate Power		PGM	5	Watts
Forward Average Gate Power		PG(AV)	0.5	Watt
Forward Peak Gate Current		IGM	2	Amps
Operating Junction Temperature Range		TJ	±40 to +125	°C
Storage Temperature Range		Tstg	±40 to +150	°C

1.VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

REV 1

Motorola Thyristor Device Data

1

Motorola, Inc. 1999

MCR218 Series

THERMAL CHARACTERISTICS

Characteristic			Symbol				Max			Unit
Thermal Resistance, Junction to Case			RθJC			2				°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.)
Characteristic		Symbol			Min		Typ	Max			Unit
Peak Forward or Reverse Blocking Current	TJ = 25°C	IDRM, IRRM									μA
(VAK = Rated VDRM or VRRM, Gate Open)					Ð		Ð	10
	TJ = 125°C				Ð		Ð	2			mA
Peak On-State Voltage(1)		V			Ð		1.5	1.8			Volts
(ITM = 16 A Peak)		TM
Gate Trigger Current (Continuous dc)		IGT			Ð		10	25			mA
(VD = 12 V, RL = 100 Ohms)
Gate Trigger Voltage (Continuous dc)		VGT			Ð		Ð	1.5			Volts
(VD = 12 V, RL = 100 Ohms)
(Rated VDRM, RL = 1000 Ohms, TJ = 125°C)					0.2		Ð	Ð
Holding Current		IH			Ð		16	30			mA
(Anode Voltage = 24 Vdc, Peak Initiating On-State Current = 0.5 A,
0.1 to 10 ms Pulse, Gate Trigger Source = 7 V, 20 Ohms)
Critical Rate-of-Rise of Off-State Voltage		dv/dt			Ð		100	Ð			V/μs
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)

1. Pulse Test: Pulse Width = 1 ms, Duty Cycle p2%.

	°C)			FIGURE 1 ± CURRENT DERATING
		125
	(
	TEMPERATURE
		115						α
		105				α = CONDUCTION ANGLE
	CASE
	ALLOWABLE	95
		85							dc
	, MAXIMUM
		75	α = 30°		60°	90° 120°	180°
		0	1	2	3	4	5	6	7	8
	C
	T		IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)

FIGURE 2 Ð ON-STATE POWER DISSIPATION

FIGURE 3 Ð NORMALIZED GATE TRIGGER CURRENT

DISSIPATIONPOWERSTATE-ONAVERAGE,	(WATTS)	15									(mA)CURRENTTRIGGERGATENORMALIZED	3.0
		12										2.0							VD = 12 Vdc
				α
												1.5
			α = Conduction Angle						dc
		9.0
						120°	180°
												1.0
		6.0			60°	90°						0.9
			α = 30°									0.7
		3.0										0.5
(AV)												0.4
		0									GT
P											,	0.3
		0	1.0	2.0	3.0	4.0	5.0	6.0	7.0	8.0	I	±60	±40	±20	0	20	40	60	80	100	120	140
				IT(AV), AVG. ON-STATE CURRENT (AMPS)											TJ, JUNCTION TEMPERATURE (°C)

2	Motorola Thyristor Device Data