Motorola MCM321024SG20, MCM321024SG25 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

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by MCM321024/D

MCM321024

1M x 32 Bit
Fast Static RAM Module

The MCM321024 is an 32M bit static random access memory module orga­nized as 1,048,576 words of 32 bits. The module is a 72–lead single in–line
memory module (SIMM) consisting of eight MCM6249 fast static RAMs pack­aged in 32–lead SOJ packages and mounted on a printed circuit board along with
sixteen decoupling capacitors.

The MCM6249 is a high performance CMOS fast static RAM organized as
1,048,576 words of 4 bits. Static design eliminates the need for external clocks
or timing strobes, while CMOS circuitry reduces power consumption and pro­vides for greater reliability .

The MCM321024 is equipped with output enable (G
enable (E1 – E4) inputs, allowing for greater system flexibility . The G input, when
high, will force the outputs to high impedance. Ex

PD0 – PD3 are reserved for density identification. PD0 and PD2 are connected
to ground. These pins can be used to identify the density of the memory module.

• Single 5 V ± 10% Power Supply

• Fast Access Time: 20/25 ns

• Three–State Outputs

• Fully TTL Compatible

• JEDEC Standard Pinout

• Power Requirement: 1520/1400 mA Maximum, Active AC

• High Board Density SIMM Package

• Byte Operation: Four Separate Chip Enables, One for Each Byte (Eight Bits)

• High Quality Six–Layer FR4 PWB with Separate Internal Power and

Ground Planes

• Incorporates Motorola’s State–of–the–Art Fast Static RAMs

PIN NAMES

A0 – A19 Address Inputs. . . . . . . . . . . . . . . . . . . . . . . . . . .

W
G
E1

– E4 Byte Enables. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DQ0 – DQ31 Data Input/Output. . . . . . . . . . . . . . . . . . . . . .

V

CC

V

SS

PD0 – PD3 Package Density. . . . . . . . . . . . . . . . . . . . . . . .

NC No Connect. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

For proper operation of the device, VSS must be connected
to ground.

) and four separate byte

high will do the same for byte x.

Write Enable. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Output Enable. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+ 5 V Power Supply. . . . . . . . . . . . . . . . . . . . . . . . . . .

Ground. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

PIN ASSIGNMENT

TOP VIEW

72 LEAD SIMM — CASE TBD

1

11
13
15
17
19
21
23
25
27
29
31
33
35

37
39
41
43
45
47
49
51
53
55
57
59
61
63
65
67
69
71

NC

3

PD2
V

5

SS

7

PD1
DQ8

9

DQ9
DQ10
DQ11
A0
A1
A2

DQ12
DQ13
DQ14
DQ15
V

SS

A15
E2

E4
A17

G
DQ24
DQ25
DQ26
DQ27
A3
A4
A5
V

CC

A6
DQ28
DQ29
DQ30
DQ31
A18
NC

NC

PD3

PD0
DQ0
DQ1
DQ2

DQ3
V

CC

A7
A8

A9
DQ4
DQ5
DQ6
DQ7

W

A14

E1

E3 38

A16

V

SS

DQ16
DQ17
DQ18
DQ19

A10
A11
A12

A13
DQ20
DQ21
DQ22
DQ23

V

SS

A19

NC

2
4
6

8

10
12
14

16
18
20
22
24
26
28

30
32

34
36

40
42
44
46
48
50
52
54
56
58
60
62
64
66
68

70
72

This document contains information on a new product. Specifications and information herein are subject to change without notice.

REV 1
11/15/96

 Motorola, Inc. 1996

MOTOROLA FAST SRAM

MCM321024

1

FUNCTIONAL BLOCK DIAGRAM

1M x 32 MEMORY MODULE

DQ0 – DQ3

E1

DQ4 – DQ7

DQ8 – DQ11

4

4

4

DQ0 – DQ3
A0 – A19

E
W
G

DQ0 – DQ3
A0 – A19

E
W
G

DQ0 – DQ3
A0 – A19

DQ16 – DQ19

E3

DQ20 – DQ23

DQ24 – DQ27

4

DQ0 – DQ3
A0 – A19

E
W
G

4

DQ0 – DQ3
A0 – A19

E
W
G

4

DQ0 – DQ3
A0 – A19

E2

DQ12 – DQ15

W

G

V

CC

V

SS

A0 – A19

PD0, PD2

E
W
G

4

DQ0 – DQ3
A0 – A19

E
W
G

PD1, PD3 – OPEN

E4

DQ28 – DQ31

E
W
G

4

DQ0 – DQ3
A0 – A19

E
W
G

MCM321024
2

MOTOROLA FAST SRAM

TRUTH TABLE

Ex G W Mode VCC Current Output Cycle

H X X Not Selected I

L H H Read I
L L H Read I
L X L Write I

SB1

or I

CCA
CCA
CCA

SB2

High–Z —
High–Z —

D

out

D

in

Read Cycle
Write Cycle

ABSOLUTE MAXIMUM RATINGS (Voltages referenced to V

Rating

Power Supply Voltage V
Voltage Relative to V
Output Current (per I/O) I
Power Dissipation P
Temperature Under Bias T
Operating Temperature T
Storage Temperatrue T

NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RA TINGS are ex-

ceeded. Functional operation should be restricted to RECOMMENDED OPERAT­ING CONDITIONS. Exposure to higher than recommended voltages for extended
periods of time could affect device reliability .

SS

Symbol Value Unit

CC

Vin, V

out

bias

stg

– 0.5 to VCC + 0.5 V

out

D

A

= 0 V)

SS

– 0.5 to 7.0 V

± 30 mA

8.0 W

– 10 to + 85 °C

0 to + 70 °C

– 25 to + 125 °C

DC OPERA TING CONDITIONS AND CHARACTERISTICS

(VCC = 5.0 V ± 10%, TA = 0 to + 70°C, Unless Otherwise Noted)

RECOMMENDED OPERATING CONDITIONS

Parameter

Supply Voltage (Operating Voltage Range) V
Input High Voltage V
Input Low Voltage V

*VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2 V ac (pulse width ≤ 20 ns)

**VIL (min) = – 3.0 V ac (pulse width ≤ 20 ns)

(Voltages Referenced to VSS = 0 V)

The devices on this module contain circuitry
to protect the inputs against damage due to
high static voltages or electric fields; however,
it is advised that normal precautions be taken
to avoid application of any voltage higher than
maximum rated voltages to these high imped­ance circuits.

These CMOS memory circuits have been
designed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The module is in a test
socket or mounted on a printed circuit board
and transverse air flow of at least 500 linear
feet per minute is maintained.

Symbol Min Typ Max Unit

CC

IH

IL

4.5 5.0 5.5 V

2.2 — VCC+0.3* V

– 0.5** — 0.8 V

DC CHARACTERISTICS

Parameter Symbol Min Typ Max Unit

Input Leakage Current (All Inputs, Vin = 0 to VCC) I
Output Leakage Current (G, Ex = VIH, V
AC Active Supply Current (G, Ex = VIL, I

Cycle time ≥ t
AC Standby Current (Ex = VIH, Cycle time ≥ t
CMOS Standby Current (Ex ≥ VCC – 0.2 V, All Inputs ≥ VCC – 0.2 V or ≤ 0.2 V) I
Output Low Voltage (IOL = + 8.0 mA) V
Output High Voltage (IOH = – 4.0 mA) V

NOTE: Good decoupling of the local power supply should always be used.

min) MCM321024–25: t

AVAV

CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, T

Input Capacitance (All pins except DQ0 – DQ31, W, G, and E1 – E4)

Input/Output Capacitance (DQ0 – DQ31) C

= 0 to VCC) I

out

= 0 mA, MCM321024–20: t

out

min) I

AVAV

= 25°C, Periodically Sampled Rather Than 100% Tested)

A

Characteristic

AVAV
AVAV

= 20 ns
= 25 ns

E1

– E4

W, G

lkg(I)

lkg(O)
I

CCA

SB1
SB2

OL
OH

— — ± 8 µA
— — ± 8 µA
—

—
— 400 480 mA
— 80 120 mA
— — 0.4 V

2.4 — — V

Symbol Typ Max Unit

C

in

out

1440
1320

32
10
40

8 9 pF

1520
1400

48
14
64

mA

pF

MOTOROLA FAST SRAM

MCM321024

3