Motorola MC74HC76D, MC74HC76N Datasheet


SEMICONDUCTOR TECHNICAL DATA
1
REV 6
Motorola, Inc. 1995
10/95
      
High–Performance Silicon–Gate CMOS
The MC74HC76 is identical in pinout to the LS76. The device inputs are compatible with Standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.
Each flip–flop is negative–edge clocked and has active–low asynchro­nous Set and Reset inputs.
The HC76 is identical in function to the HC112, but has a different pinout.
Similar in Function to the LS76 Except When Set and Reset Are
Low Simultaneously
Output Drive Capability: 10 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS and TTL
Operating Voltage Range: 2 to 6V
Low Input Current: 1µA
High Noise Immunity Characteristic of CMOS Devices
In Compliance With the JEDEC Standard No. 7A Requirements
Chip Complexity: 100 FETs or 25 Equivalent Gates
15
Q1
2
Set1
PIN 5 = V
CC
PIN 13 = GND
LOGIC DIAGRAM
16
K1
1
Clock1
4
J1
3
Reset1
14
Q1
11
Q2
7
Set2
12
K2
6
Clock2
9
J2
8
Reset2
10
Q2
FUNCTION TABLE
Inputs Outputs
Set Reset Clock J K Q Q
L H X X X H L
H L X X X L H
L L X X X L* L* H H L L No Change H H L H L H H H H L H L H H H H Toggle H H L X X No Change H H H X X No Change H H X X No Change
* Both outputs will remain low as long as Set and Reset are low, but the output states are
unpredictable if Set and Reset go high simultaneously.

161 152 143 134
K1Clock1
125 116 107
98
Q1Set1 Q1Reset1 GNDJ1 K2V
CC
Q2
Clock2
Q2
Set2
J2Reset2
Pinout: 16–Lead Packages (Top View)
D SUFFIX
SOIC PACKAGE
CASE 751B–05
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
ORDERING INFORMATION
MC74HCXXN MC74HCXXD
Plastic SOIC
1
16
1
16
MC74HC76
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V
in
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
V
out
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
I
in
DC Input Current, per Pin
± 20
mA
I
out
DC Output Current, per Pin
± 25
mA
I
CC
DC Supply Current, VCC and GND Pins
± 50
mA
P
D
Power Dissipation in Still Air Plastic DIP†
SOIC Package†
750 500
mW
T
stg
Storage Temperature Range
– 65 to + 150
_
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
Plastic DIP or SOIC Package
260
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
Vin, V
out
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature, All Package Types
– 55
+ 125
_
C
tr, t
f
Input Rise/Fall Time VCC = 2.0 V
(Figure 1) VCC = 4.5 V
VCC = 6.0 V
0 0 0
1000
500 400
ns
DC CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol Parameter Condition
V
CC V
–55 to 25°C 85°C 125°C Unit
V
IH
Minimum High–Level Input Voltage V
out
= 0.1V or VCC –0.1V
|I
out
| 20µA
2.0
4.5
6.0
1.50
3.15
4.20
1.50
3.15
4.20
1.50
3.15
4.20
V
V
IL
Maximum Low–Level Input Voltage V
out
= 0.1V or VCC – 0.1V
|I
out
| 20µA
2.0
4.5
6.0
0.3
0.9
1.2
0.3
0.9
1.2
0.3
0.9
1.2
V
V
OH
Minimum High–Level Output Voltage
Vin = VIH or V
IL
|I
out
| 20µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin =VIH or VIL|I
out
| 4.0mA
|I
out
| 5.2mA
4.5
6.0
3.98
5.48
3.84
5.34
3.70
5.20
V
OL
Maximum Low–Level Output Voltage
Vin = VIH or V
IL
|I
out
| 20µA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIH or VIL|I
out
| 4.0mA
|I
out
| 5.2mA
4.5
6.0
0.26
0.26
0.33
0.33
0.40
0.40
I
in
Maximum Input Leakage Current Vin = VCC or GND 6.0 ±0.1 ±1.0 ±1.0 µA
I
CC
Maximum Quiescent Supply Current (per Package)
Vin = VCC or GND I
out
= 0µA
6.0 4 40 80 µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance cir­cuit. For proper operation, Vin and V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
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