Motorola MC74HC74AN, MC74HC74AD Datasheet


SEMICONDUCTOR TECHNICAL DATA
3–1
REV 6
Motorola, Inc. 1995
10/95
     
High–Performance Silicon–Gate CMOS
The MC54/74HC74A is identical in pinout to the LS74. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.
This device consists of two D flip–flops with individual Set, Reset, and Clock inputs. Information at a D–input is transferred to the corresponding Q output on the next positive going edge of the clock input. Both Q and Q outputs are available from each flip–flop. The Set and Reset inputs are asynchronous.
Output Drive Capability: 10 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2.0 to 6.0 V
Low Input Current: 1.0 µA
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
Chip Complexity: 128 FETs or 32 Equivalent Gates
LOGIC DIAGRAM
RESET 1
DATA 1
CLOCK 1
SET 1
RESET 2
DATA 2
CLOCK 2
SET 2
1
2
3
4 13
12
11
10
5
6
9
8
Q1
Q1
Q2
Q2
PIN 14 = VCC PIN 7 = GND

FUNCTION TABLE
PIN ASSIGNMENT
Inputs Outputs
Set Reset Clock Data Q Q
L H X X H L H L X X L H L L X X H* H* H H H H L H H L L H H H L X No Change H H H X No Change H H X No Change
*Both outputs will remain high as long as
Set and Reset are low, but the output states are unpredictable if Set and Reset go high simultaneously.
SET 1
CLOCK 1
DATA 1
RESET 1
11
12
13
14
8
9
105
4
3
2
1
7
6
SET 2
CLOCK 2
DATA 2
RESET 2
V
CC
Q2
Q2
GND
Q1
Q1
D SUFFIX
SOIC PACKAGE
CASE 751A–03
N SUFFIX
PLASTIC PACKAGE
CASE 646–06
ORDERING INFORMATION
MC54HCXXAJ MC74HCXXAN MC74HCXXAD MC74HCXXADT
Ceramic Plastic SOIC TSSOP
1
14
1
14
1
14
DT SUFFIX
TSSOP PACKAGE
CASE 948G–01
J SUFFIX
CERAMIC PACKAGE
CASE 632–08
1
14
MC54/74HC74A
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
3–2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V
in
DC Input Voltage (Referenced to GND)
– 1.5 to VCC + 1.5
V
V
out
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
I
in
DC Input Current, per Pin
± 20
mA
I
out
DC Output Current, per Pin
± 25
mA
I
CC
DC Supply Current, VCC and GND Pins
± 50
mA
P
D
Power Dissipation in Still Air,Plastic or Ceramic DIP†
SOIC Package†
TSSOP Package†
750 500 450
mW
T
stg
Storage Temperature
– 65 to + 150
_
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP, SOIC or TSSOP Package)
(Ceramic DIP)
260 300
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C SOIC Package: – 7 mW/_C from 65_ to 125_C TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
Vin, V
out
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature, All Package Types
– 55
+ 125
_
C
tr, t
f
Input Rise and Fall Time VCC = 2.0 V
(Figures 1, 2, 3) VCC = 4.5 V
VCC = 6.0 V
0 0 0
1000
500 400
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
CC V
– 55 to
25_C
v
85_Cv 125_C
Unit
V
IH
Minimum High–Level Input Voltage
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
V
IL
Maximum Low–Level Input Voltage
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
2.0
4.5
6.0
0.5
1.35
1.8
0.5
1.35
1.8
0,5
1.35
1.8
V
V
OH
Minimum High–Level Output Voltage
Vin = VIH or V
IL
|I
out
| v 20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin = VIH or VIL|I
out
| v 4.0 mA
|I
out
| v 5.2 mA
4.5
6.0
3.98
5.48
3.84
5.34
3.7
5.2
V
OL
Maximum Low–Level Output Voltage
Vin = VIH or V
IL
|I
out
| v 20 µA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIH or VIL|I
out
| v 4.0 mA
|I
out
| v 5.2 mA
4.5
6.0
0.26
0.26
0.33
0.33
0.4
0.4
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance cir­cuit. For proper operation, Vin and V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
MC54/74HC74A
High–Speed CMOS Logic Data DL129 — Rev 6
3–3 MOTOROLA
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) – continued
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
CC V
– 55 to
25_C
v
85_Cv 125_C
Unit
I
in
Maximum Input Leakage Current
Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
µA
I
CC
Maximum Quiescent Supply Current (per Package)
Vin = VCC or GND I
out
= 0 µA
6.0
2.0
20
80
µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input tr = tf = 6.0 ns)
Guaranteed Limit
Symbol
Parameter
V
CC V
– 55 to
25_C
v
85_Cv 125_C
Unit
f
max
Maximum Clock Frequency (50% Duty Cycle)
(Figures 1 and 4)
2.0
4.5
6.0
6.0 30 35
4.8 24 28
4.0 20 24
MHz
t
PLH
,
t
PHL
Maximum Propagation Delay, Clock to Q or Q
(Figures 1 and 4)
2.0
4.5
6.0
100
20 17
125
25 21
150
30 26
ns
t
PLH
,
t
PHL
Maximum Propagation Delay, Set or Reset to Q or Q
(Figures 2 and 4)
2.0
4.5
6.0
105
21 18
130
26 22
160
32 27
ns
t
TLH
,
t
THL
Maximum Output Transition Time, Any Output
(Figures 1 and 4)
2.0
4.5
6.0
75 15 13
95 19 16
110
22 19
ns
C
in
Maximum Input Capacitance
10
10
10
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the Motorola High–
Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
C
PD
Power Dissipation Capacitance (Per Flip–Flop)*
39
pF
*Used to determine the no–load dynamic power consumption: PD = CPD V
CC
2
f + ICC VCC. For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
TIMING REQUIREMENTS (Input t
r
= tf = 6.0 ns)
Guaranteed Limit
Symbol
Parameter
V
CC V
– 55 to
25_C
v
85_Cv 125_C
Unit
t
su
Minimum Setup Time, Data to Clock
(Figure 3)
2.0
4.5
6.0
80 16 14
100
20 17
120
24 20
ns
t
h
Minimum Hold Time, Clock to Data
(Figure 3)
2.0
4.5
6.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
ns
t
rec
Minimum Recovery Time, Set or Reset Inactive to Clock
(Figure 2)
2.0
4.5
6.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
ns
t
w
Minimum Pulse Width, Clock
(Figure 1)
2.0
4.5
6.0
60 12 10
75 15 13
90 18 15
ns
t
w
Minimum Pulse Width, Set or Reset
(Figure 2)
2.0
4.5
6.0
60 12 10
75 15 13
90 18 15
ns
tr, t
f
Maximum Input Rise and Fall Times
(Figures 1, 2, 3)
2.0
4.5
6.0
1000
500 400
1000
500 400
1000
500 400
ns
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