SEMICONDUCTOR TECHNICAL DATA
High–Performance Silicon–Gate CMOS
The MC74HC564A is identical in pinout to the LS564. The device inputs
are compatible with standard CMOS outputs; with pullup resistors, they are
compatible with LSTTL outputs.
This device is identical in function to the HC534A but has the flip–flop
inputs on the opposite side of the package from the outputs to facilitate PC
board layout.
Data meeting the setup time is clocked, in inverted form, to the outputs
with the rising edge of the Clock. The Output Enable input does not affect the
states of the flip–flops, but when Output Enable is high, all device outputs are
forced to the high–impedance state. Thus, data may be stored even when
the outputs are not enabled.
The HC564A is the inverting version of the HC574A.
• Output Drive Capability: 15 LSTTL Loads
• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2 to 6 V
• Low Input Current: 1 µA
• High Noise Immunity Characteristic of CMOS Devices
• In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
• Chip Complexity: 282 FETs or 70.5 Equivalent Gates
LOGIC DIAGRAM
219
DATA
INPUTS
OUTPUT
ENABLE
D0
D1
D2
D3
D4
D5
D6
D7
CLOCK
3
4
5
6
7
8
9
11
1
Q0
18
Q1
17
Q2
16
Q3
15
Q4
14
Q5
13
Q6
12
Q7
PIN 20 = V
PIN 10 = GND
INVERTING
OUTPUTS
CC
N SUFFIX
20
1
20
1
ORDERING INFORMATION
MC74HCXXXAN
MC74HCXXXADW
PIN ASSIGNMENT
OUTPUT
ENABLE
D0
D1
D2
D3 5
D4
D5
D6
D7
GND
FUNCTION TABLE
Inputs Output
Output
Enable Clock D Q
LHL
LLH
L L,H, X No Change
HXXZ
X = don’t care
Z = high impedance
PLASTIC PACKAGE
CASE 738–03
DW SUFFIX
SOIC PACKAGE
CASE 751D–04
1
2
3
4
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
Plastic
SOIC
V
CC
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
CLOCK
9/96
Motorola, Inc. 1996
1
REV 0
MC74HC564A
MAXIMUM RATINGS*
Symbol
V
V
I
I
T
Î
DC Supply Voltage (Referenced to GND)
CC
V
DC Input Voltage (Referenced to GND)
in
DC Output Voltage (Referenced to GND)
out
I
DC Input Current, per Pin
in
DC Output Current, per Pin
out
DC Supply Current, VCC and GND Pins
CC
P
Power Dissipation in Still Air Plastic DIP†
D
Storage Temperature
stg
T
Lead Temperature, 1 mm from Case for 10 Seconds
L
ОООООООООООО
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
V
Vin, V
T
tr, t
ÎÎ
DC Supply Voltage (Referenced to GND)
CC
DC Input Voltage, Output Voltage (Referenced to GND)
out
Operating Temperature, All Package Types
A
Input Rise and Fall Time VCC = 2.0 V
f
(Figure 1) VCC = 4.5 V
ОООООООООООО
Parameter
SOIC Package†
(Plastic DIP or SOIC Package)
Parameter
VCC = 6.0 V
Value
– 0.5 to + 7.0
– 0.5 to VCC + 0.5
– 0.5 to VCC + 0.5
± 20
± 35
± 75
750
500
– 65 to + 150
260
ÎÎÎÎ
Min
Max
2.0
6.0
0
V
CC
– 55
+ 125
0
1000
0
500
Î
Î
0
400
Unit
V
V
V
mA
mA
mA
mW
_
C
_
C
Î
Unit
V
V
_
C
ns
Î
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
V
should be constrained to the
out
range GND v (Vin or V
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
) v VCC.
out
MOTOROLA High–Speed CMOS Logic Data
2
DL129 — Rev 6
MC74HC564A
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
V
Symbol
ÎÎ
V
IH
ÎÎ
ÎÎ
V
IL
ÎÎ
ÎÎ
ООООООО
Parameter
Minimum High–Level Input
Voltage
ООООООО
ООООООО
Maximum Low–Level Input
ООООООО
Voltage
ООООООО
Test Conditions
ООООООО
V
= 0.1 V or VCC – 0.1 V
out
|I
| v 20 µA
out
ООООООО
ООООООО
V
= 0.1 V or VCC – 0.1 V
out
ООООООО
|I
| v 20 µA
out
ООООООО
CC
ÎÎ
2.0
3.0
ÎÎ
4.5
6.0
ÎÎ
2.0
ÎÎ
3.0
4.5
ÎÎ
6.0
V
OH
ÎÎ
ÎÎ
ÎÎÎОООООООÎООООООО
V
OL
ÎÎ
ÎÎÎОООООООÎООООООО
I
in
I
OZ
ÎÎ
ÎÎ
I
CC
ÎÎ
Minimum High–Level Output
ООООООО
Voltage
ООООООО
Maximum Low–Level Output
Voltage
ООООООО
Maximum Input Leakage Current
Maximum Three–State Leakage
ООООООО
Current
ООООООО
Maximum Quiescent Supply
ООООООО
Current (per Package)
Vin = VIH or V
ООООООО
|I
| v 20 µA
out
ООООООО
Vin = VIH or VIL|I
Vin = VIH or V
|I
| v 20 µA
out
ООООООО
Vin = VIH or VIL|I
IL
IL
| v 2.4 mA
out
|I
| v 6.0 mA
out
|I
| v 7.8 mA
out
| v 2.4 mA
out
|I
| v 6.0 mA
out
|I
| v 7.8 mA
out
Vin = VCC or GND
Output in High–Impedance State
ООООООО
Vin = VIL or V
V
= VCC or GND
out
ООООООО
Vin = VCC or GND
ООООООО
I
= 0 µA
out
IH
2.0
ÎÎ
4.5
6.0
ÎÎ
3.0
4.5
ÎÎ
6.0
2.0
4.5
ÎÎ
6.0
3.0
4.5
ÎÎ
6.0
6.0
6.0
ÎÎ
ÎÎ
6.0
ÎÎ
NOTE:Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
– 55 to
V
25_C
ÎÎ
1.5
2.1
ÎÎ
3.15
4.2
ÎÎ
0.5
ÎÎ
0.9
1.35
ÎÎ
1.8
1.9
ÎÎ
4.4
5.9
ÎÎ
2.48
3.98
ÎÎ
5.48
0.1
0.1
ÎÎ
0.1
0.26
0.26
ÎÎ
0.26
± 0.1
± 0.5
ÎÎ
ÎÎ
ÎÎ4ÎÎ
v
85_C
ÎÎ
1.5
2.1
ÎÎ
3.15
4.2
ÎÎ
0.5
ÎÎ
0.9
1.35
ÎÎ
1.8
1.9
ÎÎ
4.4
5.9
ÎÎ
2.34
3.84
ÎÎ
5.34
0.1
0.1
ÎÎ
0.1
0.33
0.33
ÎÎ
0.33
± 1.0
± 5.0
ÎÎ
ÎÎ
40
v
125_C
ÎÎ
1.5
2.1
ÎÎ
3.15
4.2
ÎÎ
0.5
ÎÎ
0.9
1.35
ÎÎ
1.8
1.9
ÎÎ
4.4
5.9
ÎÎ
2.20
3.70
ÎÎ
5.20
0.1
0.1
ÎÎ
0.1
0.40
0.40
ÎÎ
0.40
± 1.0
± 10
ÎÎ
ÎÎ
160
ÎÎ
Unit
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
µA
µA
Î
Î
µA
Î
V
V
V
V
High–Speed CMOS Logic Data
DL129 — Rev 6
3 MOTOROLA