Motorola MC74HC4316N Datasheet
SEMICONDUCTOR TECHNICAL DATA
1
REV 6
Motorola, Inc. 1995
10/95
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High–Performance Silicon–Gate CMOS
The MC74HC4316 utilizes silicon–gate CMOS technology to achieve fast
propagation delays, low ON resistances, and low OFF–channel leakage
current. This bilateral switch/multiplexer/demultiplexer controls analog and
digital voltages that may vary across the full analog power–supply range
(from VCC to VEE).
The HC4316 is similar in function to the metal–gate CMOS MC14016 and
MC14066, and t o the High–Speed CMOS HC4016 and HC4066. Each
device has four independent switches. The device control and Enable inputs
are compatible with standard CMOS outputs; with pullup resistors, they are
compatible with LSTTL outputs. The device has been designed so that the
ON resistances (RON) are much more linear over input voltage than RON of
metal–gate CMOS analog switches. Logic–level translators are provided so
that the On/Off Control and Enable logic–level voltages need only be V
CC
and GND, while the switch is passing signals ranging between VCC and VEE.
When the Enable pin (active–low) is high, all four analog switches are turned
off.
• Logic–Level Translator for On/Off Control and Enable Inputs
• Fast Switching and Propagation Speeds
• High ON/OFF Output Voltage Ratio
• Diode Protection on All Inputs/Outputs
• Analog Power–Supply Voltage Range (VCC – VEE) = 2.0 to 12.0 Volts
• Digital (Control) Power–Supply Voltage Range (VCC – GND) = 2.0 to
6.0 Volts, Independent of V
EE
• Improved Linearity of ON Resistance
• Chip Complexity: 66 FETs or 16.5 Equivalent Gates
LOGIC DIAGRAM
X
A
A ON/OFF CONTROL
ANALOG
SWITCH
LEVEL
TRANSLATOR
ANALOG
OUTPUTS/INPUTS
PIN 16 = V
CC
PIN 8 = GND
PIN 9 = V
EE
GND
≥
V
EE
2
Y
A
1
15
X
B
B ON/OFF CONTROL
ANALOG
SWITCH
LEVEL
TRANSLATOR
3
Y
B
4
5
X
C
C ON/OFF CONTROL
ANALOG
SWITCH
LEVEL
TRANSLATOR
11
Y
C
10
6
X
D
D ON/OFF CONTROL
ANALOG
SWITCH
LEVEL
TRANSLATOR
12
Y
D
13
14
ENABLE
7
ANALOG INPUTS/OUTPUTS = XA, XB, XC, X
D
FUNCTION TABLE
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
Y
D
X
D
D ON/OFF
CONTROL
A ON/OFF
CONTROL
V
CC
V
EE
X
C
Y
C
X
B
Y
B
Y
A
X
A
GND
ENABLE
C ON/OFF
CONTROL
B ON/OFF
CONTROL
Inputs
State of
On/Off Analog
Enable Control Switch
L H On
L L Off
H X Off
X = don’t care
D SUFFIX
SOIC PACKAGE
CASE 751B–05
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
1
16
1
16
ORDERING INFORMATION
MC74HCXXXXN
MC74HCXXXXD
Plastic
SOIC
MC74HC4316
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
Positive DC Supply Voltage (Ref. to GND)
(Ref. to VEE)
– 0.5 to + 7.0
– 0.5 to + 14.0
V
V
EE
Negative DC Supply Voltage (Ref. to GND)
– 7.0 to + 0.5
V
V
IS
Analog Input Voltage
VEE – 0.5
to VCC + 0.5
V
V
in
DC Input Voltage (Ref. to GND)
– 1.5 to VCC + 1.5
V
I
DC Current Into or Out of Any Pin
± 25
mA
P
D
Power Dissipation in Still Air Plastic DIP†
SOIC Package†
750
500
mW
T
stg
Storage Temperature
– 65 to + 150
_
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
260
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
Positive DC Supply Voltage (Ref. to GND)
2.0
6.0
V
V
EE
Negative DC Supply Voltage (Ref. to GND)
– 6.0
GND
V
V
IS
Analog Input Voltage
V
EEVCC
V
V
in
Digital Input Voltage (Ref. to GND)
GND
V
CC
V
VIO*
Static or Dynamic Voltage Across Switch
—
1.2
V
T
A
Operating Temperature, All Package Types
– 55
+ 125
_
C
tr, t
f
Input Rise and Fall Time VCC = 2.0 V
(Control or Enable Inputs) VCC = 4.5 V
(Figure 10) VCC = 6.0 V
0
0
0
1000
500
400
ns
*For voltage drops across the switch greater than 1.2 V (switch on), excessive VCC current may
be drawn; i.e., the current out of the switch may contain both VCC and switch input components.
The reliability of the device will be unaffected unless the Maximum Ratings are exceeded.
DC ELECTRICAL CHARACTERISTICS Digital Section (Voltages Referenced to GND) V
EE
= GND Except Where Noted
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
CC
V
– 55 to
25_C
v
85_Cv 125_C
Unit
V
IH
Minimum High–Level Voltage,
Control or Enable Inputs
Ron = Per Spec
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
V
IL
Maximum Low–Level Voltage,
Control or Enable Inputs
Ron = Per Spec
2.0
4.5
6.0
0.3
0.9
1.2
0.3
0.9
1.2
0.3
0.9
1.2
V
I
in
Maximum Input Leakage
Current, Control or Enable
Inputs
Vin = VCC or GND
VEE = – 6.0 V
6.0
± 0.1
± 1.0
± 1.0
µA
I
CC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
VIO = 0 V VEE = GND
VEE = – 6.0
6.0
6.0
2
8
20
80
40
160
µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
I/O pins must be connected to a
properly terminated line or bus.
MC74HC4316
High–Speed CMOS Logic Data
DL129 — Rev 6
3 MOTOROLA
DC ELECTRICAL CHARACTERISTICS Analog Section (Voltages Referenced to V
EE
)
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
CC
V
V
EE
V
– 55 to
25_C
v
85_Cv 125_C
Unit
Vin = V
IH
VIS = VCC to V
EE
IS v 2.0 mA (Figures 1, 2)
2.0*
4 5
4.5
6.0
0.0
0.0
– 4.5
– 6.0
—
210
95
75
—
230
105
85
—
250
110
90
Ω
Vin = V
IH
VIS = VCC or VEE (Endpoints)
IS v 2.0 mA (Figures 1, 2)
2.0
4.5
4.5
6.0
0.0
0.0
– 4.5
– 6.0
—
100
80
70
—
110
90
80
—
130
100
90
∆R
on
Maximum Difference in “ON”
Resistance Between Any Two
Channels in the Same Package
Vin = V
IH
VIS = 1/2 (VCC – VEE)
IS v 2.0 mA
2.0
4.5
4.5
6.0
0.0
0.0
– 4.5
– 6.0
—
20
15
10
—
30
25
20
—
40
30
25
Ω
I
off
Maximum Off–Channel Leakage
Current, Any One Channel
Vin = V
IL
VIO = VCC or V
EE
Switch Off (Figure 3)
6.0
– 6.0
0.1
0.5
1.0
µA
I
on
Maximum On–Channel Leakage
Current, Any One Channel
Vin = V
IH
VIS = VCC or V
EE
(Figure 4)
6.0
– 6.0
0.1
0.5
1.0
µA
*At supply voltage (VCC – VEE) approaching 2 V the analog switch–on resistance becomes extremely non–linear. Therefore, for low–voltage
operation, it is recommended that these devices only be used to control digital signals.
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Control or Enable tr = tf = 6 ns, VEE = GND)
Guaranteed Limit
Symbol
Parameter
V
CC
V
– 55 to
25_C
v
85_Cv 125_C
Unit
t
PLH
,
t
PHL
Maximum Propagation Delay, Analog Input to Analog Output
(Figures 8 and 9)
2.0
4.5
6.0
50
10
10
75
15
13
90
18
15
ns
t
PLZ
,
t
PHZ
Maximum Propagation Delay, Control or Enable to Analog Output
(Figures 10 and 11)
2.0
4.5
6.0
250
50
43
312
63
54
375
75
64
ns
t
PZL
,
t
PZH
Maximum Propagation Delay, Control or Enable to Analog Output
(Figures 10 and 11)
2.0
4.5
6.0
185
53
45
220
66
56
265
75
68
ns
Maximum Capacitance ON/OFF Control
and Enable Inputs
—
10
10
10
Control Input = GND
Analog I/O
Feedthrough
—
—
35
1.0
35
1.0
35
1.0
NOTES:
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
15
*Used to determine the no–load dynamic power consumption: PD = CPD V
CC
2
f + ICC VCC. For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
R
Maximum “ON” Resistance
on
C
C
PD
Power Dissipation Capacitance (Per Switch) (Figure 13)*
pF
pF
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