Motorola MC74HC4316AN, MC74HC4316ADT, MC74HC4316AD Datasheet


SEMICONDUCTOR TECHNICAL DATA
1
REV 0
Motorola, Inc. 1995
10/95
 
High–Performance Silicon–Gate CMOS
The MC74HC4316A utilizes silicon–gate CMOS technology to achieve fast propagation delays, low ON resistances, and low OFF–channel leakage current. This bilateral switch/multiplexer/demultiplexer controls analog and digital voltages that may vary across the full analog power–supply range (from VCC to VEE).
The HC4316A is similar in function to the metal–gate CMOS MC14016 and MC14066, and to the High–Speed CMOS HC4016A and HC4066A. Each device has four independent switches. The device control and Enable inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. The device has been designed so that the ON resistances (RON) are much more linear over input voltage than RON of metal–gate CMOS analog switches. Logic–level translators are provided so that the On/Off Control and Enable logic–level voltages need only be VCC and GND, while the switch is passing signals ranging between VCC and VEE. When the Enable pin (active–low) is high, all four analog switches are turned off.
Logic–Level Translator for On/Off Control and Enable Inputs
Fast Switching and Propagation Speeds
High ON/OFF Output Voltage Ratio
Diode Protection on All Inputs/Outputs
Analog Power–Supply Voltage Range (VCC – VEE) = 2.0 to 12.0 Volts
Digital (Control) Power–Supply Voltage Range (VCC – GND) = 2.0 to
6.0 Volts, Independent of V
EE
Improved Linearity of ON Resistance
Chip Complexity: 66 FETs or 16.5 Equivalent Gates
LOGIC DIAGRAM
X
A
A ON/OFF CONTROL
ANALOG
SWITCH
LEVEL
TRANSLATOR
ANALOG OUTPUTS/INPUTS
PIN 16 = V
CC
PIN 8 = GND PIN 9 = V
EE
GND
V
EE
2
Y
A
1
15
X
B
B ON/OFF CONTROL
ANALOG
SWITCH
LEVEL
TRANSLATOR
3
Y
B
4 5
X
C
C ON/OFF CONTROL
ANALOG
SWITCH
LEVEL
TRANSLATOR
11
Y
C
10
6
X
D
D ON/OFF CONTROL
ANALOG
SWITCH
LEVEL
TRANSLATOR
12
Y
D
13 14
ENABLE
7
ANALOG INPUTS/OUTPUTS = XA, XB, XC, X
D
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
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FUNCTION TABLE
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
Y
D
X
D
D ON/OFF CONTROL
A ON/OFF CONTROL
V
CC
V
EE
X
C
Y
C
X
B
Y
B
Y
A
X
A
GND
ENABLE
C ON/OFF CONTROL
B ON/OFF CONTROL
Inputs
State of
On/Off Analog
Enable Control Switch
L H On L L Off H X Off
X = don’t care
D SUFFIX
SOIC PACKAGE
CASE 751B–05
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
1
16
1
16
ORDERING INFORMATION
MC74HCXXXXAN MC74HCXXXXAD MC74HCXXXXADT
Plastic SOIC TSSOP
1
14
DT SUFFIX
TSSOP PACKAGE
CASE 948G–01
MC74HC4316A
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
Positive DC Supply Voltage (Ref. to GND)
(Ref. to VEE)
– 0.5 to + 7.0
– 0.5 to + 14.0
V
V
EE
Negative DC Supply Voltage (Ref. to GND)
– 7.0 to + 0.5
V
V
IS
Analog Input Voltage
VEE – 0.5
to VCC + 0.5
V
V
in
DC Input Voltage (Ref. to GND)
– 0.5 to VCC + 0.5
V
I
DC Current Into or Out of Any Pin
± 25
mA
P
D
Power Dissipation in Still Air Plastic DIP†
SOIC Package†
TSSOP Package†
750 500 450
mW
T
stg
Storage Temperature
– 65 to + 150
_
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP, SOIC or TSSOP Package)
260
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
Positive DC Supply Voltage (Ref. to GND)
2.0
6.0
V
V
EE
Negative DC Supply Voltage (Ref. to GND)
– 6.0
GND
V
V
IS
Analog Input Voltage
V
EEVCC
V
V
in
Digital Input Voltage (Ref. to GND)
GND
V
CC
V
VIO*
Static or Dynamic Voltage Across Switch
1.2
V
T
A
Operating Temperature, All Package Types
– 55
+ 125
_
C
tr, t
f
Input Rise and Fall Time VCC = 2.0 V (Control or Enable Inputs) VCC = 3.0 V
(Figure 10) VCC = 4.5 V
VCC = 6.0 V
0 0 0 0
1000
600 500 400
ns
*For voltage drops across the switch greater than 1.2 V (switch on), excessive VCC current may
be drawn; i.e., the current out of the switch may contain both VCC and switch input components. The reliability of the device will be unaffected unless the Maximum Ratings are exceeded.
DC ELECTRICAL CHARACTERISTICS Digital Section (Voltages Referenced to GND) V
EE
= GND Except Where Noted
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
CC V
– 55 to
25_C
v
85_Cv 125_C
Unit
V
IH
Minimum High–Level Voltage, Control or Enable Inputs
Ron = Per Spec
2.0
3.0
4.5
6.0
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
V
V
IL
Maximum Low–Level Voltage, Control or Enable Inputs
Ron = Per Spec
2.0
3.0
4.5
6.0
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
V
I
in
Maximum Input Leakage Current, Control or Enable Inputs
Vin = VCC or GND VEE = – 6.0 V
6.0
± 0.1
± 1.0
± 1.0
µA
I
CC
Maximum Quiescent Supply Current (per Package)
Vin = VCC or GND VIO = 0 V VEE = GND
VEE = – 6.0
6.0
6.0
2 4
20 40
40
160
µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance cir­cuit. For proper operation, Vin and V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. I/O pins must be connected to a properly terminated line or bus.
MC74HC4316A
High–Speed CMOS Logic Data DL129 — Rev 6
3 MOTOROLA
DC ELECTRICAL CHARACTERISTICS Analog Section (Voltages Referenced to V
EE
)
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
CC V
V
EE V
– 55 to
25_C
v
85_Cv 125_C
Unit
R
on
Maximum “ON” Resistance
Vin = V
IH
VIS = VCC to V
EE
IS v 2.0 mA (Figures 1, 2)
2.0* 4 5
4.5
6.0
0.0
0.0 – 4.5 – 6.0
160
90 90
— 200 110 110
— 240 130 130
Vin = V
IH
VIS = VCC or VEE (Endpoints) IS v 2.0 mA (Figures 1, 2)
2.0
4.5
4.5
6.0
0.0
0.0 – 4.5 – 6.0
— 90 70 70
115
90 90
— 140 105 105
R
on
Maximum Difference in “ON” Resistance Between Any Two Channels in the Same Package
Vin = V
IH
VIS = 1/2 (VCC – VEE) IS v 2.0 mA
2.0
4.5
4.5
6.0
0.0
0.0 – 4.5 – 6.0
— 20 15 15
— 25 20 20
— 30 25 25
I
off
Maximum Off–Channel Leakage Current, Any One Channel
Vin = V
IL
VIO = VCC or V
EE
Switch Off (Figure 3)
6.0
– 6.0
0.1
0.5
1.0
µA
I
on
Maximum On–Channel Leakage Current, Any One Channel
Vin = V
IH
VIS = VCC or V
EE
(Figure 4)
6.0
– 6.0
0.1
0.5
1.0
µA
*At supply voltage (VCC – VEE) approaching 2 V the analog switch–on resistance becomes extremely non–linear. Therefore, for low–voltage
operation, it is recommended that these devices only be used to control digital signals.
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Control or Enable tr = tf = 6 ns, VEE = GND)
Guaranteed Limit
Symbol
Parameter
V
CC V
– 55 to
25_C
v
85_Cv 125_C
Unit
t
PLH
,
t
PHL
Maximum Propagation Delay, Analog Input to Analog Output
(Figures 8 and 9)
2.0
4.5
6.0
40
6 5
50
8 7
60
9 8
ns
t
PLZ
,
t
PHZ
Maximum Propagation Delay, Control or Enable to Analog Output
(Figures 10 and 11)
2.0
4.5
6.0
130
40 30
160
50 40
200
60 50
ns
t
PZL
,
t
PZH
Maximum Propagation Delay, Control or Enable to Analog Output
(Figures 10 and 11)
2.0
4.5
6.0
140
40 30
175
50 40
250
60 50
ns
C
Maximum Capacitance ON/OFF Control
and Enable Inputs
10
10
10
pF
Control Input = GND
Analog I/O
Feedthrough
— —
35
1.0
35
1.0
35
1.0
NOTES:
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
C
PD
Power Dissipation Capacitance (Per Switch) (Figure 13)*
15
pF
*Used to determine the no–load dynamic power consumption: PD = CPD V
CC
2
f + ICC VCC. For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
MC74HC4316A
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
4
ADDITIONAL APPLICATION CHARACTERISTICS (GND = 0 V)
Symbol
Parameter
Test Conditions
V
CC V
V
EE V
Limit*
25_C
Unit
BW
Maximum On–Channel Bandwidth or Minimum Frequency Response
(Figure 5)
fin = 1 MHz Sine Wave Adjust fin Voltage to Obtain 0 dBm at V
OS
Increase fin Frequency Until dB Meter Reads – 3 dB RL = 50 , CL = 10 pF
2.25
4.50
6.00
– 2.25 – 4.50 – 6.00
150 160 160
MHz
Off–Channel Feedthrough Isolation
(Figure 6)
fin Sine Wave Adjust fin Voltage to Obtain 0 dBm at V
IS
fin = 10 kHz, RL = 600 , CL = 50 pF
2.25
4.50
6.00
– 2.25 – 4.50 – 6.00
– 50 – 50 – 50
dB
fin = 1.0 MHz, RL = 50 , CL = 10 pF
2.25
4.50
6.00
– 2.25 – 4.50 – 6.00
– 40 – 40 – 40
Feedthrough Noise, Control to Switch
(Figure 7)
Vin v 1 MHz Square Wave (tr = tf = 6 ns) Adjust RL at Setup so that IS = 0 A
RL = 600 , CL = 50 pF
2.25
4.50
6.00
– 2.25 – 4.50 – 6.00
60 130 200
mV
PP
RL = 10 k, CL = 10 pF
2.25
4.50
6.00
– 2.25 – 4.50 – 6.00
30
65 100
Crosstalk Between Any Two Switches
(Figure 12)
fin Sine Wave Adjust fin Voltage to Obtain 0 dBm at V
IS
fin = 10 kHz, RL = 600 , CL = 50 pF
2.25
4.50
6.00
– 2.25 – 4.50 – 6.00
– 70 – 70 – 70
dB
fin = 1.0 MHz, RL = 50 , CL = 10 pF
2.25
4.50
6.00
– 2.25 – 4.50 – 6.00
– 80 – 80 – 80
THD
Total Harmonic Distortion
(Figure 14)
fin = 1 kHz, RL = 10 k, CL = 50 pF THD = THD
Measured
– THD
Source
VIS = 4.0 VPP sine wave VIS = 8.0 VPP sine wave
VIS = 11.0 VPP sine wave
2.25
4.50
6.00
– 2.25 – 4.50 – 6.00
0.10
0.06
0.04
%
*Limits not tested. Determined by design and verified by qualification.
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