MOTOROLA MC74HC4046AFR1, MC74HC4046AFR2, MC74HC4046AFL1, MC74HC4046ADTR2, MC74HC4046AF Datasheet

...
Semiconductor Components Industries, LLC, 2000
March, 2000 – Rev. 7
1 Publication Order Number:
MC74HC4046A/D
MC74HC4046A
Phase-Locked Loop
High–Performance Silicon–Gate CMOS
The MC74HC4046A is similar in function to the MC14046 Metal gate CMOS device. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.
The HC4046A phase–locked loop contains three phase comparators, a voltage–controlled oscillator (VCO) and unity gain op–amp DEM
OUT
. The comparators have two common signal inputs, COMPIN, and SIGIN. Input SIGIN and COMPIN can be used directly coupled to large voltage signals, or indirectly coupled (with a series capacitor to small voltage signals). The self–bias circuit adjusts small voltage signals in the linear region of the amplifier. Phase comparator 1 (an exclusive OR gate) provides a digital error signal PC1
OUT
and maintains 90 degrees phase shift at the center frequency between SIGIN and COMPIN signals (both at 50% duty cycle). Phase comparator 2 (with leading–edge sensing logic) provides digital error signals PC2
OUT
and PCP
OUT
and maintains a 0 degree phase shift between SIGIN and COMPIN signals (duty cycle is immaterial). The linear VCO produces an output signal VCO
OUT
whose frequency is determined by the voltage of input VCOIN signal and the capacitor and resistors connected to pins C1A, C1B, R1 and R2. The unity gain op–amp output DEM
OUT
with an external resistor is used where the VCOIN signal is needed but no loading can be tolerated. The inhibit input, when high, disables the VCO and all op–amps to minimize standby power consumption.
Applications include FM and FSK modulation and demodulation, frequency synthesis and multiplication, frequency discrimination, tone decoding, data synchronization and conditioning, voltage–to–frequency conversion and motor speed control.
Output Drive Capability: 10 LSTTL Loads
Low Power Consumption Characteristic of CMOS Devices
Operating Speeds Similar to LSTTL
Wide Operating Voltage Range: 3.0 to 6.0 V
Low Input Current: 1.0 µA Maximum (except SIG
IN
and COMPIN)
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
Low Quiescent Current: 80 µA Maximum (VCO disabled)
High Noise Immunity Characteristic of CMOS Devices
Diode Protection on all Inputs
Chip Complexity: 279 FETs or 70 Equivalent Gates
SO–16
D SUFFIX
CASE 751B
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1
16
PDIP–16 N SUFFIX CASE 648
1
16
MARKING
DIAGRAMS
1
16
MC74HC4046AN
AWLYYWW
1
16
HC4046A
AWLYWW
A = Assembly Location WL = Wafer Lot YY = Year WW = Work Week
Device Package Shipping
ORDERING INFORMATION
MC74HC4046AN PDIP–16 2000 / Box MC74HC4046AD SOIC–16
48 / Rail
MC74HC4046ADR2 SOIC–16 2500 / Reel
TSSOP–16 DT SUFFIX
CASE 948F
1
16
HC40
46A
ALYW
1
16
SOEIAJ–16
F SUFFIX CASE 966
1
16
74HC4046B
AWLYWW
1
16
MC74HC4046AF SOIC–EIAJ See Note
NO TAG
MC74HC4046AFEL SOIC–EIAJ See Note
NO TAG
1. For ordering information on the EIAJ version of the SOIC packages, please contact your local ON Semiconductor representative.
MC74HC4046A
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Pin No. Symbol Name and Function
1 2 3 4 5 6 7 8
9 10 11 12 13 14 15 16
PCP
OUT
PC1
OUT
COMP
IN
VCO
OUT
INH C1A C1B
GND
VCO
IN
DEM
OUT
R1 R2
PC2
OUT
SIG
IN
PC3
OUT
V
CC
Phase Comparator Pulse Output Phase Comparator 1 Output Comparator Input VCO Output Inhibit Input Capacitor C1 Connection A Capacitor C1 Connection B Ground (0 V) V
SS
VCO Input Demodulator Output Resistor R1 Connection Resistor R2 Connection Phase Comparator 2 Output Signal Input Phase Comparator 3 Output Positive Supply Voltage
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V
in
DC Input Voltage (Referenced to GND)
– 1.5 to VCC + 1.5
V
V
out
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
I
in
DC Input Current, per Pin
± 20
mA
I
out
DC Output Current, per Pin
± 25
mA
I
CC
DC Supply Current, VCC and GND Pins
± 50
mA
ÎÎ
Î
P
D
ОООООООООООО
Î
Power Dissipation in Still Air Plastic DIP†
SOIC Package†
ÎÎÎ
Î
750 500
Î
Î
mW
T
stg
Storage Temperature
– 65 to + 150
_
C
ÎÎ
Î
T
L
ОООООООООООО
Î
Lead Temperature, 1 mm from Case for 10 Seconds
Plastic DIP and SOIC Package†
ÎÎÎ
Î
260
Î
Î
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
ÎÎ
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
3.0
ÎÎ
6.0
V
V
CC
DC Supply Voltage (Referenced to GND) NON–VCO 2.0 6.0 V
Vin, V
out
DC Input Voltage, Output Voltage (Referenced to GND)
0
ÎÎ
V
CC
V
T
A
Operating Temperature, All Package Types
– 55
ÎÎ
+ 125
_
C
ÎÎ
Î
tr, t
f
ООООООООООООО
Î
Input Rise and Fall Time VCC = 2.0 V (Pin 5) VCC = 4.5 V
VCC = 6.0 V
Î
Î
0 0 0
ÎÎ
ÎÎ
1000
500 400
Î
Î
ns
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance cir­cuit. For proper operation, Vin and V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
R2
PC2
out
SIG
in
PC3
out
V
CC
VCO
in
DEM
out
R1
VCO
out
COMP
in
PC1
out
PCP
out
GND
C1B
C1A
INH
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[Phase Comparator Section] DC ELECTRICAL CHARACTERISTICS
(Voltages Referenced to GND)
Guaranteed Limit
Symbol Parameter Test Conditions
V
CC
Volts
– 55 to
25_C
85°C
125°C
Unit
V
IH
Minimum High–Level Input Voltage DC Coupled SIGIN, COMP
IN
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| 20 µA
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
V
IL
Maximum Low–Level Input Voltage DC Coupled SIGIN, COMP
IN
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| 20 µA
2.0
4.5
6.0
0.5
1.35
1.8
0.5
1.35
1.8
0.5
1.35
1.8
V
V
OH
Minimum High–Level Output Voltage PCP
OUT
, PCn
OUT
Vin = VIH or V
IL
|I
out
| 20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin = VIH or V
IL
|I
out
| 4.0 mA
|I
out
| 5.2 mA
4.5
6.0
3.98
5.48
3.84
5.34
3.7
5.2 (continued)
[Phase Comparator Section] DC ELECTRICAL CHARACTERISTICS – continued (Voltages Referenced to GND)
Guaranteed Limit
Symbol Parameter Test Conditions
V
CC
Volts
– 55 to
25_C
85°C
125°C
Unit
V
OL
Maximum Low–Level Output Voltage Qa–Qh PCP
OUT
, PCn
OUT
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| 20 µA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIH or V
IL
|I
out
| 4.0 mA
|I
out
| 5.2 mA
4.5
6.0
0.26
0.26
0.33
0.33
0.4
0.4
I
in
Maximum Input Leakage Cur­rent SIGIN, COMP
IN
Vin = VCC or GND
2.0
3.0
4.5
6.0
± 3.0
± 7.0 ± 18.0 ± 30.0
± 4.0
± 9.0 ± 23.0 ± 38.0
± 5.0 ± 11.0 ± 27.0 ± 45.0
µA
I
OZ
Maximum Three–State Leakage Current PC2
OUT
Output in High–Impedance State Vin = VIH or V
IL
V
out
= VCC or GND
6.0 ± 0.5 ± 5.0 ± 10 µA
I
CC
Maximum Quiescent Supply Current (per Package) (VCO disabled) Pins 3, 5 and 14 at V
CC
Pin 9 at GND; Input Leakage at Pins 3 and 14 to be excluded
Vin = VCC or GND |I
out
| = 0 µA
6.0 4.0 40 160 µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book
(DL129/D).
[Phase Comparator Section] AC ELECTRICAL CHARACTERISTICS
(CL = 50 pF, Input tr = tf = 6.0 ns)
Guaranteed Limit
Symbol Parameter
V
CC
Volts
– 55 to 25_C
85°C 125°C
Unit
t
PLH
,
t
PHL
Maximum Propagation Delay, SIGIN/COMPIN to PC1
OUT
(Figure 1)
2.0
4.5
6.0
175
35 30
220
44 37
265
53 45
ns
t
PLH
,
t
PHL
Maximum Propagation Delay, SIGIN/COMPIN to PCP
OUT
(Figure 1)
2.0
4.5
6.0
340
68 58
425
85 72
510 102
87
ns
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[Phase Comparator Section] AC ELECTRICAL CHARACTERISTICS
(CL = 50 pF, Input tr = tf = 6.0 ns)
t
PLH
,
t
PHL
Maximum Propagation Delay, SIGIN/COMPIN to PC3
OUT
(Figure 1)
2.0
4.5
6.0
270
54 46
340
68 58
405
81 69
ns
t
PLZ
,
t
PHZ
Maximum Propagation Delay, SIGIN/COMPIN Output
Disable Time to PC2
OUT
(Figures 2 and 3)
2.0
4.5
6.0
200
40 34
250
50 43
300
60 51
ns
t
PZH
,
t
PZL
Maximum Propagation Delay, SIGIN/COMPIN Output
Enable Time to PC2
OUT
(Figures 2 and 3)
2.0
4.5
6.0
230
46 39
290
58 49
345
69 59
ns
t
TLH
,
t
THL
Maximum Output Transition Time
(Figure 1)
2.0
4.5
6.0
75 15 13
95 19 16
110
22 19
ns
[VCO Section] DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol Parameter Test Conditions
V
CC
Volts
– 55 to
25_C
85°C
125°C
Unit
V
IH
Minimum High–Level Input Voltage INH
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| 20 µA
3.0
4.5
6.0
2.1
3.15
4.2
2.1
3.15
4.2
2.1
3.15
4.2
V
V
IL
Maximum Low–Level Input Voltage INH
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| 20 µA
3.0
4.5
6.0
0.90
1.35
1.8
0.9
1.35
1.8
0.9
1.35
1.8
V
V
OH
Minimum High–Level Output Voltage VCO
OUT
Vin=VIH or V
IL
|I
out
| 20 µA
3.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin=VIH or V
IL
|I
out
| 4.0 mA
|I
out
| 5.2 mA
4.5
6.0
3.98
5.48
3.84
5.34
3.7
5.2
V
OL
Maximum Low–Level Output Voltage VCO
OUT
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| 20 µA
3.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin=VIH or V
IL
|I
out
| 4.0 mA
|I
out
| 5.2 mA
4.5
6.0
0.26
0.26
0.33
0.33
0.4
0.4
I
in
Maximum Input Leakage Current INH, VCO
IN
Vin=VCC or GND 6.0 0.1 1.0 1.0 µA
Min Max Min Max Min Max
V
VCO
IN
Operating Voltage Range at VCOIN over the range specified for R1; For linearity see Fig. 15A, Parallel value of R1 and R2 should be > 2.7 k
INH = V
IL
3.0
4.5
6.0
0.1
0.1
0.1
1.0
2.5
4.0
0.1
0.1
0.1
1.0
2.5
4.0
0.1
0.1
0.1
1.0
2.5
4.0
V
R1 Resistor Range 3.0
4.5
6.0
3.0
3.0
3.0
300 300 300
3.0
3.0
3.0
300 300 300
3.0
3.0
3.0
300 300 300
k
R2 3.0
4.5
6.0
3.0
3.0
3.0
300 300 300
3.0
3.0
3.0
300 300 300
3.0
3.0
3.0
300 300 300
C1 Capacitor Range 3.0
4.5
6.0
40 40 40
No
Limit
pF
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[VCO Section] AC ELECTRICAL CHARACTERISTICS
(CL = 50 pF, Input tr = tf = 6.0 ns)
Guaranteed Limit
V
– 55 to 25_C
85°C
125°C
Symbol Parameter
V
CC
Volts
Min Max Min Max Min Max
Unit
f/T Frequency Stability with
T emperature Changes (Figure 13A, B, C)
3.0
4.5
6.0
%/K
fo VCO Center Frequency
(Duty Factor = 50%) (Figure 14A, B, C, D)
3.0
4.5
6.0
3
11
13
MHz
fVCO VCO Frequency Linearity 3.0
4.5
6.0
See Figures 15A, B, C %
VCO Duty Factor at VCO
OUT
3.0
4.5
6.0
Typical 50% %
[Demodulator Section] DC ELECTRICAL CHARACTERISTICS
Guaranteed Limit
V
– 55 to 25_C
85°C
125°C
Symbol Parameter Test Conditions
V
CC
Volts
Min Max Min Max Min Max
Unit
RS Resistor Range At RS > 300 k the
Leakage Current can Influence VDEM
OUT
3.0
4.5
6.0
50 50 50
300 300 300
k
V
OFF
Offset Voltage VCOIN to VDEM
OUT
Vi = VVCOIN = 1/2 VCC; Values taken over RS Range.
3.0
4.5
6.0
See Figure 12 mV
RD Dynamic Output
Resistance at DEM
OUT
VDEM
OUT
= 1/2 V
CC
3.0
4.5
6.0
Typical 25
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