Motorola MC74HC367AN, MC74HC367ADT, MC74HC367AD Datasheet
SEMICONDUCTOR TECHNICAL DATA
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High–Performance Silicon–Gate CMOS
The MC74HC367A is identical in pinout to the LS367. The device inputs
are compatible with standard CMOS outputs; with pullup resistors, they are
compatible with LSTTL outputs.
This device is arranged into 2–bit and 4–bit sections, each having its own
active–low Output Enable. When either of the enables is high, the affected
buffer outputs are placed into high–impedance states. The HC367A has
noninverting outputs.
• Output Drive Capability: 15 LSTTL Loads
• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2 to 6 V
• Low Input Current: 1 µA
• High Noise Immunity Characteristic of CMOS Devices
• In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
• Chip Complexity: 92 FETs or 23 Equivalent Gates
LOGIC DIAGRAM
3
Y0A0
5
Y1
7
Y2
A1
A2
2
4
6
N SUFFIX
PLASTIC PACKAGE
16–LEAD
CASE 648–08
D SUFFIX
SOIC PACKAGE
16–LEAD
CASE 751B–05
DT SUFFIX
TSSOP PACKAGE
16–LEAD
CASE 948F–01
ORDERING INFORMATION
MC74HCXXXAN
MC74HCXXXAD
MC74HCXXXADT
PIN ASSIGNMENT
OUTPUT
ENABLE 1
A0
Y0
A1
Y1
A2
Y2
GND
1
2
3
4
6
7
8
16
15
14
13
125
11
10
9
Plastic
SOIC
TSSOP
V
CC
OUTPUT
ENABLE 2
A5
Y5
A4
Y4
A3
Y3
10
A3
12
A4
14
A5
OUTPUT ENABLE 1
OUTPUT ENABLE 2
This document contains information on a new product. Specifications and information herein are subject to
change without notice.
3/97
1
15
Motorola, Inc. 1997
9
Y3
11
Y4
13
Y5
PIN 16 = V
PIN 8 = GND
1
CC
FUNCTION TABLE
Inputs Output
Enable 1,
Enable 2 A Y
LLL
LHH
HXZ
X = don’t care
Z = high impedance
REV 0.1
MC74HC367A
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
MAXIMUM RATINGS*
Symbol
V
V
I
I
Î
Î
T
Î
Î
DC Supply Voltage (Referenced to GND)
CC
V
DC Input Voltage (Referenced to GND)
in
DC Output Voltage (Referenced to GND)
out
I
DC Input Current, per Pin
in
DC Output Current, per Pin
out
DC Supply Current, VCC and GND Pins
CC
P
Power Dissipation in Still Air, Plastic DIP†
D
ОООООООООООО
ОООООООООООО
Storage Temperature
stg
ОООООООООООО
T
Lead Temperature, 1 mm from Case for 10 Seconds
L
ОООООООООООО
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
Parameter
SOIC Package†
TSSOP Package†
Plastic DIP, SOIC or TSSOP Package
Value
– 0.5 to + 7.0
– 0.5 to VCC + 0.5
– 0.5 to VCC + 0.5
± 20
± 25
± 50
750
500
ÎÎÎÎ
450
ÎÎÎÎ
– 65 to + 150
ÎÎÎÎ
ÎÎÎÎ
260
Unit
V
V
V
mA
mA
mA
mW
Î
Î
_
C
Î
_
C
Î
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
V
should be constrained to the
out
range GND v (Vin or V
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
) v VCC.
out
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
Vin, V
T
A
tr, t
ÎÎ
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
out
Operating Temperature, All Package Types
Input Rise and Fall Time VCC = 2.0 V
f
(Figure 1) VCC = 4.5 V
ОООООООООООО
Parameter
VCC = 6.0 V
Min
2.0
0
– 55
0
0
Î
0
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbol
ÎÎ
V
IH
ÎÎ
ÎÎ
ÎÎ
V
IL
ÎÎ
ÎÎ
V
OH
ÎÎ
ÎÎ
ÎÎÎОООООООÎООООООО
ООООООО
Minimum High–Level Input
ООООООО
Voltage
ООООООО
ООООООО
Maximum Low–Level Input
ООООООО
Voltage
ООООООО
Minimum High–Level Output
ООООООО
Voltage
ООООООО
Parameter
Test Conditions
ООООООО
V
= VCC – 0.1 V
out
ООООООО
|I
| v 20 µA
out
ООООООО
ООООООО
V
= 0.1 V
out
ООООООО
|I
| v 20 µA
out
ООООООО
Vin = V
IH
ООООООО
|I
| v 20 µA
out
ООООООО
Vin = V
IH
|I
| v 3.6 mA
out
|I
| v 6.0 mA
out
|I
| v 7.8 mA
out
Max
6.0
V
CC
+ 125
1000
500
Î
400
Unit
V
V
_
C
ns
Î
V
CC
V
ÎÎ
2.0
ÎÎ
3.0
ÎÎ
4.5
6.0
ÎÎ
2.0
ÎÎ
3.0
4.5
ÎÎ
6.0
2.0
ÎÎ
4.5
6.0
ÎÎ
3.0
4.5
ÎÎ
6.0
Guaranteed Limit
– 55 to
25_C
ÎÎ
ÎÎ
ÎÎ
3.15
ÎÎ
0.50
ÎÎ
0.90
1.35
ÎÎ
1.5
2.1
4.2
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
1.80
1.9
ÎÎ
ÎÎ
4.4
5.9
ÎÎ
ÎÎ
2.48
3.98
ÎÎ
5.48
ÎÎ
v
85_C
1.5
2.1
3.15
4.2
0.50
0.90
1.35
1.80
1.9
4.4
5.9
2.34
3.84
5.34
v
125_C
ÎÎ
1.5
ÎÎ
2.1
ÎÎ
3.15
4.2
ÎÎ
0.50
ÎÎ
0.90
1.35
ÎÎ
1.80
1.9
ÎÎ
4.4
5.9
ÎÎ
2.20
3.70
ÎÎ
5.20
Unit
Î
Î
Î
Î
Î
Î
Î
Î
Î
V
V
V
MOTOROLA High–Speed CMOS Logic Data
2
DL129 — Rev 6
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