MOTOROLA MC74HC126AF, MC74HC126AFEL, MC74HC126AFL1, MC74HC126AD, MC74HC126ADR2 Datasheet

 Semiconductor Components Industries, LLC, 2000

March, 2000 – Rev. 9

1 Publication Order Number:

MC74HC125A/D

MC74HC125A,
MC74HC126A

Quad 3-State Noninverting
Buffers

High–Performance Silicon–Gate CMOS

The MC74HC125A and MC74HC126A are identical in pinout to
the LS125 and LS126. The device inputs are compatible with standard
CMOS outputs; with pullup resistors, they are compatible with
LSTTL outputs.

The HC125A and HC126A noninverting buffers are designed to be
used with 3–state memory address drivers, clock drivers, and other
bus–oriented systems. The devices have four separate output enables
that are active–low (HC125A) or active–high (HC126A).

• Output Drive Capability: 15 LSTTL Loads

• Outputs Directly Interface to CMOS, NMOS, and TTL

• Operating Voltage Range: 2.0 to 6.0 V

• Low Input Current: 1.0 µA

• High Noise Immunity Characteristic of CMOS Devices

• In Compliance with the Requirements Defined by JEDEC Standard

No. 7A

• Chip Complexity: 72 FETs or 18 Equivalent Gates

LOGIC DIAGRAM

HC125A

Active–Low Output Enables

HC126A

Active–High Output Enables

Y1

Y2

Y4

3

6

8

11

13

12

10

9

4

5

1

2

A1

OE1

A2

OE2

A3

OE3

A4

OE4

PIN 14 = V

CC

PIN 7 = GND

A1

OE1

A2

OE2

A3

OE3

A4

OE4

Y3

Y1

Y2

Y4

Y3

13

12

10

9

4

5

1

23

6

8

11

FUNCTION TABLE

HC125A

Inputs Output

AOE Y

HL H
LL L
XH Z

HC126A

Inputs Output

AOE Y

HH H
LH L
XL Z

Device Package Shipping

ORDERING INFORMATION

MC74HC12xAN PDIP–14 2000 / Box
MC74HC12xAD SOIC–14

http://onsemi.com

55 / Rail

MC74HC12xADR2 SOIC–14 2500 / Reel

MARKING

DIAGRAMS

A = Assembly Location
WL or L = Wafer Lot
YY or Y = Year
WW or W = Work Week

MC74HC12xADT TSSOP–14 96 / Rail
MC74HC12xADTR2 TSSOP–14

2500 / Reel

TSSOP–14
DT SUFFIX

CASE 948G

HC

12xA

ALYW

1

14

1

14

PDIP–14

N SUFFIX

CASE 646

MC74HC12xAN

AWLYYWW

SOIC–14

D SUFFIX

CASE 751A

1

14

HC12xA

AWLYWW

PIN ASSIGNMENT

11

12

13

14

8

9

105

4

3

2

1

7

6

OE3

Y4

A4

OE4

V

CC

Y3

A3

OE2

Y1

A1

OE1

GND

Y2

A2

MC74HC125A, MC74HC126A

http://onsemi.com

2

MAXIMUM RATINGS*

Symbol

Parameter

Value

Unit

V

CC

DC Supply Voltage (Referenced to GND)

– 0.5 to + 7.0

V

V

in

DC Input Voltage (Referenced to GND)

– 0.5 to VCC + 0.5

V

V

out

DC Output Voltage (Referenced to GND)

– 0.5 to VCC + 0.5

V

I

in

DC Input Current, per Pin

± 20

mA

I

out

DC Output Current, per Pin

± 35

mA

I

CC

DC Supply Current, VCC and GND Pins

± 75

mA

ÎÎ

Î

P

D

ОООООООООООО

Î

Power Dissipation in Still Air Plastic DIP†

SOIC Package†

TSSOP Package†

ÎÎÎ

Î

750
500
450

Î

Î

mW

T

stg

Storage Temperature

– 65 to + 150

_

C

ÎÎ

Î

T

L

ОООООООООООО

Î

Lead Temperature, 1 mm from Case for 10 Seconds

(Plastic DIP, SOIC or TSSOP Package)

ÎÎÎ

Î

260

Î

Î

_

C

*Maximum Ratings are those values beyond which damage to the device may occur.

Functional operation should be restricted to the Recommended Operating Conditions.

†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C

SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: – 6.1 mW/_C from 65_ to 125_C

For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Min

ÎÎ

Max

Unit

V

CC

DC Supply Voltage (Referenced to GND)

2.0

ÎÎ

6.0

V

ÎÎ

Î

Vin, V

out

ООООООООООООО

Î

DC Input Voltage, Output Voltage
(Referenced to GND)

Î

Î

0

ÎÎ

ÎÎ

V

CC

Î

Î

V

T

A

Operating Temperature, All Package Types

– 55

ÎÎ

+ 125

_

C

ÎÎ

Î

tr, t

f

ООООООООООООО

Î

Input Rise and Fall Time VCC = 2.0 V

(Figure 1) VCC = 4.5 V

VCC = 6.0 V

Î

Î

0
0
0

ÎÎ

ÎÎ

1000

500
400

Î

Î

ns

DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

Guaranteed Limit

ÎÎ

Î

Symbol

ООООООО

Î

Parameter

ООООООО

Î

Test Conditions

ÎÎ

Î

V

CC
V

ÎÎ

Î

– 55 to

25_C

ÎÎÎ

Î

Î

Î

v

85_C

ÎÎ

Î

v

125_C

Î

Î

Unit

ÎÎ

Î

ÎÎ

Î

V

IH

ООООООО

Î

ООООООО

Î

Minimum High–Level Input
Voltage

ООООООО

Î

ООООООО

Î

V

out

= VCC – 0.1 V

|I

out

| v 20 µA

ÎÎ

Î

ÎÎ

Î

2.0

3.0

4.5

6.0

ÎÎ

Î

ÎÎ

Î

1.5

2.1

3.15

4.2

ÎÎÎ

Î

Î

Î

Î

Î

Î

1.5

2.1

3.15

4.2

ÎÎ

Î

ÎÎ

Î

1.5

2.1

3.15

4.2

Î

Î

Î

Î

V

ÎÎ

Î

ÎÎ

Î

V

IL

ООООООО

Î

ООООООО

Î

Maximum Low–Level Input
Voltage

ООООООО

Î

ООООООО

Î

V

out

= 0.1 V

|I

out

| v 20 µA

ÎÎ

Î

ÎÎ

Î

2.0

3.0

4.5

6.0

ÎÎ

Î

ÎÎ

Î

0.5

0.9

1.35

1.8

ÎÎÎ

Î

Î

Î

Î

Î

Î

0.5

0.9

1.35

1.8

ÎÎ

Î

ÎÎ

Î

0.5

0.9

1.35

1.8

Î

Î

Î

Î

V

ÎÎ

Î

V

OH

ООООООО

Î

Minimum High–Level Output
Voltage

ООООООО

Î

Vin = V

IH

|I

out

| v 20 µA

ÎÎ

Î

2.0

4.5

6.0

ÎÎ

Î

1.9

4.4

5.9

ÎÎÎ

Î

Î

Î

1.9

4.4

5.9

ÎÎ

Î

1.9

4.4

5.9

Î

Î

V

ÎÎÎОООООООÎООООООО

Î

Vin = V

IH

|I

out

| v 3.6 mA

|I

out

| v 6.0 mA

|I

out

| v 7.8 mA

ÎÎ

Î

3.0

4.5

6.0

ÎÎ

Î

2.48

3.98

5.48

ÎÎÎ

Î

Î

Î

2.34

3.84

5.34

ÎÎ

Î

2.2

3.7

5.2

Î

Î

ÎÎ

Î

V

OL

ООООООО

Î

Maximum Low–Level Output
Voltage

ООООООО

Î

Vin = V

IL

|I

out

| v 20 µA

ÎÎ

Î

2.0

4.5

6.0

ÎÎ

Î

0.1

0.1

0.1

ÎÎÎ

Î

Î

Î

0.1

0.1

0.1

ÎÎ

Î

0.1

0.1

0.1

Î

Î

V

ÎÎÎОООООООÎООООООО

Î

Vin = V

IL

|I

out

| v 3.6 mA

|I

out

| v 6.0 mA

|I

out

| v 7.8 mA

ÎÎ

Î

3.0

4.5

6.0

ÎÎ

Î

0.26

0.26

0.26

ÎÎÎ

Î

Î

Î

0.33

0.33

0.33

ÎÎ

Î

0.4

0.4

0.4

Î

Î

This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir­cuit. For proper operation, Vin and
V

out

should be constrained to the

range GND v (Vin or V

out

) v VCC.

Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.

MC74HC125A, MC74HC126A

http://onsemi.com

3

DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

Guaranteed Limit

Unit

v

125_C

ÎÎÎ

v

85_C

– 55 to

25_C

V

CC

V

Test Conditions

Parameter

Symbol

ÎÎ

Î

I

in

ООООООО

Î

Maximum Input Leakage
Current

ООООООО

Î

Vin = VCC or GND

ÎÎ

Î

6.0

ÎÎ

Î

± 0.1

ÎÎÎ

Î

Î

Î

± 1.0

ÎÎ

Î

± 1.0

Î

Î

µA

ÎÎ

Î

I

OZ

ООООООО

Î

Maximum Three–State
Leakage Current

ООООООО

Î

Output in High–Impedance State
Vin = VIL or V

IH

V

out

= VCC or GND

ÎÎ

Î

6.0

ÎÎ

Î

± 0.5

ÎÎÎ

Î

Î

Î

± 5.0

ÎÎ

Î

± 10

Î

Î

µA

ÎÎ

Î

I

CC

ООООООО

Î

Maximum Quiescent Supply
Current (per Package)

ООООООО

Î

Vin = VCC or GND
I

out

= 0 µA

ÎÎ

Î

6.0

ÎÎ

Î

4.0

ÎÎÎ

Î

Î

Î

40

ÎÎ

Î

160

Î

Î

µA

NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book

(DL129/D).

AC ELECTRICAL CHARACTERISTICS (C

L

= 50 pF, Input tr = tf = 6.0 ns)

Guaranteed Limit

Symbol

Parameter

V

CC
V

– 55 to

25_C

ÎÎÎ

v

85_Cv 125_C

Unit

ÎÎÎ

Î

ÎÎÎ

Î

t

PLH

,

t

PHL

ОООООООООООООО

Î

ОООООООООООООО

Î

Maximum Propagation Delay, Input A to Output Y

(Figures 1 and 3)

ÎÎ

Î

ÎÎ

Î

2.0

3.0

4.5

6.0

ÎÎ

Î

ÎÎ

Î

90
36
18
15

ÎÎÎ

Î

Î

Î

Î

Î

Î

115

45
23
20

ÎÎ

Î

ÎÎ

Î

135

60
27
23

Î

Î

Î

Î

ns

ÎÎÎ

Î

ÎÎÎ

Î

t

PLZ

,

t

PHZ

ОООООООООООООО

Î

ОООООООООООООО

Î

Maximum Propagation Delay, Output Enable to Y

(Figures 2 and 4)

ÎÎ

Î

ÎÎ

Î

2.0

3.0

4.5

6.0

ÎÎ

Î

ÎÎ

Î

120

45
24
20

ÎÎÎ

Î

Î

Î

Î

Î

Î

150

60
30
26

ÎÎ

Î

ÎÎ

Î

180

80
36
31

Î

Î

Î

Î

ns

ÎÎÎ

Î

ÎÎÎ

Î

t

PZL

,

t

PZH

ОООООООООООООО

Î

ОООООООООООООО

Î

Maximum Propagation Delay, Output Enable to Y

(Figures 2 and 4)

ÎÎ

Î

ÎÎ

Î

2.0

3.0

4.5

6.0

ÎÎ

Î

ÎÎ

Î

90
36
18
15

ÎÎÎ

Î

Î

Î

Î

Î

Î

115

45
23
20

ÎÎ

Î

ÎÎ

Î

135

60
27
23

Î

Î

Î

Î

ns

ÎÎÎ

Î

ÎÎÎ

Î

t

TLH

,

t

THL

ОООООООООООООО

Î

ОООООООООООООО

Î

Maximum Output Transition Time, Any Output

(Figures 1 and 3)

ÎÎ

Î

ÎÎ

Î

2.0

3.0

4.5

6.0

ÎÎ

Î

ÎÎ

Î

60
22
12
10

ÎÎÎ

Î

Î

Î

Î

Î

Î

75
28
15
13

ÎÎ

Î

ÎÎ

Î

90
34
18
15

Î

Î

Î

Î

ns

C

in

Maximum Input Capacitance

—

10

ÎÎÎ

10

10

pF

ÎÎÎ

Î

C

out

ОООООООООООООО

Î

Maximum Three–State Output Capacitance
(Output in High–Impedance State)

ÎÎ

Î

—

ÎÎ

Î

15

ÎÎÎ

Î

Î

Î

15

ÎÎ

Î

15

Î

Î

pF

NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON

Semiconductor High–Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V

C

PD

Power Dissipation Capacitance (Per Buffer)*

30

pF

*Used to determine the no–load dynamic power consumption: PD = CPD V

CC

2

f + ICC VCC. For load considerations, see Chapter 2 of the

ON Semiconductor High–Speed CMOS Data Book (DL129/D).

MC74HC125A, MC74HC126A

http://onsemi.com

4

SWITCHING W AVEFORMS

Figure 1.

Figure 2.

OUTPUT Y

50%

50%

50%

50%

90%

10%

V

CC

V

CC

GND

GND
HIGH

IMPEDANCE
V

OL

V

OH

OUTPUT Y

OUTPUT Y

OE (HC125A)

OE (HC126A)

t

PZLtPLZ

t

PZHtPHZ

*Includes all probe and jig capacitance

CL*

TEST POINT

DEVICE

UNDER

TEST

OUTPUT

Figure 3. Test Circuit

*Includes all probe and jig capacitance

Figure 4. Test Circuit

OUTPUT

TEST POINT

CL *

1 kΩ

CONNECT TO VCC WHEN
TESTING t

PLZ

AND t

PZL.

CONNECT TO GND WHEN
TESTING t

PHZ

and t

PZH.

DEVICE

UNDER

TEST

HIGH
IMPEDANCE

90%

10%

50%

90%

50%

10%

V

CC

GND

t

f

t

r

t

PLH

t

PHL

t

TLH

t

THL

INPUT A

HC125A

(1/4 OF THE DEVICE)

HC126A

(1/4 OF THE DEVICE)

OE

A

V

CC

Y

OE

A

V

CC

Y

MC74HC125A, MC74HC126A

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5

P ACKAGE DIMENSIONS

PDIP–14

N SUFFIX

CASE 646–06

ISSUE L

NOTES:

1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE
POSITION AT SEATING PLANE AT MAXIMUM
MATERIAL CONDITION.

2. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.

3. DIMENSION B DOES NOT INCLUDE MOLD
FLASH.

4. ROUNDED CORNERS OPTIONAL.

17

14 8

B

A
F

HG D

K

C

N

L

J

M

SEATING
PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.715 0.770 18.16 19.56
B 0.240 0.260 6.10 6.60
C 0.145 0.185 3.69 4.69
D 0.015 0.021 0.38 0.53
F 0.040 0.070 1.02 1.78

G 0.100 BSC 2.54 BSC

H 0.052 0.095 1.32 2.41
J 0.008 0.015 0.20 0.38
K 0.115 0.135 2.92 3.43
L 0.300 BSC 7.62 BSC

M 0 10 0 10

N 0.015 0.039 0.39 1.01

____

SOIC–14

D SUFFIX

CASE 751A–03

ISSUE F

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.

5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.

–A–

–B–

G

P

7 PL

14 8

71

M

0.25 (0.010) B

M

S

B

M

0.25 (0.010) A

S

T

–T–

F

R

X 45

SEATING
PLANE

D 14 PL

K

C

J

M

_

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A 8.55 8.75 0.337 0.344
B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.054 0.068
D 0.35 0.49 0.014 0.019
F 0.40 1.25 0.016 0.049
G 1.27 BSC 0.050 BSC
J 0.19 0.25 0.008 0.009
K 0.10 0.25 0.004 0.009
M 0 7 0 7
P 5.80 6.20 0.228 0.244
R 0.25 0.50 0.010 0.019

____

MC74HC125A, MC74HC126A

http://onsemi.com

6

P ACKAGE DIMENSIONS

TSSOP–14
DT SUFFIX

CASE 948G–01

ISSUE O

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A 4.90 5.10 0.193 0.200
B 4.30 4.50 0.169 0.177
C ––– 1.20 ––– 0.047
D 0.05 0.15 0.002 0.006
F 0.50 0.75 0.020 0.030
G 0.65 BSC 0.026 BSC
H 0.50 0.60 0.020 0.024
J 0.09 0.20 0.004 0.008

J1 0.09 0.16 0.004 0.006

K 0.19 0.30 0.007 0.012

K1 0.19 0.25 0.007 0.010

L 6.40 BSC 0.252 BSC
M 0 8 0 8

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH
OR GATE BURRS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.

4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED

0.25 (0.010) PER SIDE.

5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN
EXCESS OF THE K DIMENSION AT MAXIMUM
MATERIAL CONDITION.

6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.

7. DIMENSION A AND B ARE TO BE DETERMINED
AT DATUM PLANE –W–.

____

S

U0.15 (0.006) T

2X L/2

S

U

M

0.10 (0.004) V

S

T

L

–U–

SEATING
PLANE

0.10 (0.004)

–T–

SECTION N–N

DETAIL E

J

J1

K

K1

DETAIL E

F

M

–W–

0.25 (0.010)

8

14

7

1

PIN 1
IDENT.

H

G

A

D

C

B

S

U0.15 (0.006) T

–V–

14X REFK

N

N

MC74HC125A, MC74HC126A

http://onsemi.com

7

Notes

MC74HC125A, MC74HC126A

http://onsemi.com

8

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MC74HC125A/D

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Email: ONlit–[e-mail]

French Phone: [phone] (M–F 1:00pm to 5:00pm Toulouse T ime)

Email: ONlit–[e-mail]

English Phone: [phone] (M–F 12:00pm to 5:00pm UK T ime)

Email: [e-mail]

EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781

*Available from Germany, France, Italy , England, Ireland