Motorola MC74HC08ADT, MC74HC08AD, MC54HC08AJ, MC74HC08AN Datasheet
SEMICONDUCTOR TECHNICAL DATA
1
REV 7
Motorola, Inc. 1998
2/98
High–Performance Silicon–Gate CMOS
The MC54/74HC08A is identical in pinout to the LS08. The device
inputs are compatible with Standard CMOS outputs; with pullup resistors,
they are compatible with LSTTL outputs.
• Output Drive Capability: 10 LSTTL Loads
• Outputs Directly Interface to CMOS, NMOS and TTL
• Operating Voltage Range: 2 to 6V
• Low Input Current: 1µA
• High Noise Immunity Characteristic of CMOS Devices
• In Compliance With the JEDEC Standard No. 7A Requirements
• Chip Complexity: 24 FETs or 6 Equivalent Gates
3
Y1
1
A1
PIN 14 = V
CC
PIN 7 = GND
LOGIC DIAGRAM
2
B1
6
Y2
4
A2
5
B2
8
Y3
9
A3
10
B3
11
Y4
12
A4
13
B4
Y = AB
Pinout: 14–Lead Packages (Top View)
1314 12 11 10 9 8
21 34567
VCCB4 A4 Y4 B3 A3 Y3
A1 B1 Y1 A2 B2 Y2 GND
L
L
H
H
L
H
L
H
FUNCTION TABLE
Inputs Output
AB
L
L
L
H
Y
D SUFFIX
SOIC PACKAGE
CASE 751A–03
N SUFFIX
PLASTIC PACKAGE
CASE 646–06
ORDERING INFORMATION
MC54HCXXAJ
MC74HCXXAN
MC74HCXXAD
MC74HCXXADT
Ceramic
Plastic
SOIC
TSSOP
1
14
1
14
DT SUFFIX
TSSOP PACKAGE
CASE 948B–03
J SUFFIX
CERAMIC PACKAGE
CASE 632–08
1
14
1
14
MC54/74HC08A
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V
in
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
V
out
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
I
in
DC Input Current, per Pin
± 20
mA
I
out
DC Output Current, per Pin
± 25
mA
I
CC
DC Supply Current, VCC and GND Pins
± 50
mA
Î
Î
Î
P
D
ОООООООООООО
Î
ОООООООООООО
Power Dissipation in Still Air,Plastic or Ceramic DIP†
SOIC Package†
TSSOP Package†
ÎÎÎÎ
Î
ÎÎÎÎ
750
500
450
Î
Î
Î
mW
Î
T
stg
ОООООООООООО
Storage Temperature
ÎÎÎÎ
– 65 to + 150
Î
_
C
Î
Î
Î
Î
T
L
ОООООООООООО
Î
ОООООООООООО
Î
Lead Temperature, 1 mm from Case for 10 Seconds
Plastic DIP, SOIC or TSSOP Package
Ceramic DIP
ÎÎÎÎ
Î
ÎÎÎÎ
Î
260
300
Î
Î
Î
Î
_
C
*Maximum Ratings are those values beyond which damage to the device may occur .
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
Vin, V
out
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature, All Package Types
– 55
+ 125
_
C
ÎÎ
Î
ÎÎ
Î
tr, t
f
ОООООООООООО
Î
ОООООООООООО
Î
Input Rise and Fall Time VCC = 2.0 V
(Figure 1) VCC = 4.5 V
VCC = 6.0 V
Î
Î
Î
Î
0
0
0
Î
Î
Î
Î
1000
500
400
Î
Î
Î
Î
ns
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
MC54/74HC08A
High–Speed CMOS Logic Data
DL129 — Rev 6
3 MOTOROLA
DC CHARACTERISTICS (Voltages Referenced to GND)
V
Guaranteed Limit
Symbol Parameter Condition
V
CC
V
–55 to 25°C ≤85°C ≤125°C Unit
V
IH
Minimum High–Level Input Voltage V
out
= 0.1V or VCC –0.1V
|I
out
| ≤ 20µA
2.0
3.0
4.5
6.0
1.50
2.10
3.15
4.20
1.50
2.10
3.15
4.20
1.50
2.10
3.15
4.20
V
V
IL
Maximum Low–Level Input Voltage V
out
= 0.1V or VCC – 0.1V
|I
out
| ≤ 20µA
2.0
3.0
4.5
6.0
0.50
0.90
1.35
1.80
0.50
0.90
1.35
1.80
0.50
0.90
1.35
1.80
V
V
OH
Minimum High–Level Output
Voltage
Vin = VIH or V
IL
|I
out
| ≤ 20µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin =VIH or VIL|I
out
| ≤ 2.4mA
|I
out
| ≤ 4.0mA
|I
out
| ≤ 5.2mA
3.0
4.5
6.0
2.48
3.98
5.48
2.34
3.84
5.34
2.20
3.70
5.20
V
OL
Maximum Low–Level Output
Voltage
Vin = VIH or V
IL
|I
out
| ≤ 20µA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIH or VIL|I
out
| ≤ 2.4mA
|I
out
| ≤ 4.0mA
|I
out
| ≤ 5.2mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.40
0.40
0.40
I
in
Maximum Input Leakage Current Vin = VCC or GND 6.0 ±0.1 ±1.0 ±1.0 µA
I
CC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
I
out
= 0µA
6.0 1.0 10 40 µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
AC CHARACTERISTICS (C
L
= 50pF, Input tr = tf = 6ns)
V
Guaranteed Limit
Symbol Parameter
V
CC
V
–55 to 25°C ≤85°C ≤125°C Unit
t
PLH
,
t
PHL
Maximum Propagation Delay, Input A or B to Output Y
(Figures 1 and 2)
2.0
3.0
4.5
6.0
75
30
15
13
95
40
19
16
110
55
22
19
ns
t
TLH
,
t
THL
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
2.0
3.0
4.5
6.0
75
27
15
13
95
32
19
16
110
36
22
19
ns
C
in
Maximum Input Capacitance 10 10 10 pF
NOTE:For propagation delays with loads other than 50 pF , and information on typical parametric values, see Chapter 2 of the Motorola High–
Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V , VEE = 0 V
C
PD
Power Dissipation Capacitance (Per Buffer)*
20
pF
*Used to determine the no–load dynamic power consumption: PD = CPD V
CC
2
f + ICC VCC. For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
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