Motorola MC54HC4040AJ, MC74HC4040AN, MC74HC4040AD, MC74HC4040ADT Datasheet

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SEMICONDUCTOR TECHNICAL DATA

1

REV 1

 Motorola, Inc. 1995

10/95

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High–Performance Silicon–Gate CMOS

The MC54/74C4040A is identical in pinout to the standard CMOS
MC14040. The device inputs are compatible with standard CMOS out­puts; with pullup resistors, they are compatible with LSTTL outputs.

This device consists of 12 master–slave flip–flops. The output of each
flip–flop feeds the next and the frequency at each output is half of that of
the preceding one. The state counter advances on the negative–going
edge of the Clock input. Reset is asynchronous and active–high.

State changes of the Q outputs do not occur simultaneously because of
internal ripple delays. Therefore, decoded output signals are subject to
decoding spikes and may have to be gated with the Clock of the
HC4040A for some designs.

• Output Drive Capability: 10 LSTTL Loads

• Outputs Directly Interface to CMOS, NMOS, and TTL

• Operating Voltage Range: 2 to 6 V

• Low Input Current: 1 µA

• High Noise Immunity Characteristic of CMOS Devices

• In Compliance With JEDEC Standard No. 7A Requirements

• Chip Complexity: 398 FETs or 99.5 Equivalent Gates

LOGIC DIAGRAM

Q1

9

Q2

7

Q3

6

Q4

5

Q5

3

Q6

2

Q7

4

Q8

13

Q9

12

Q10

14

Clock

10

Reset

11

Pin 16 = V

CC

Pin 8 = GND

1516 14 13 12 11 10

21 3 4 5 6 7

V

CC

9

8

Q11 Q10 Q8 Q9 Reset Clock Q1

Q12 Q6 Q5 Q7 Q4 Q3 Q2

GND

Pinout: 16–Lead Plastic Package

(Top View)

Q11

15

Q12

1

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FUNCTION TABLE

Clock Reset Output State

X

L
L
H

No Charge

Advance to Next State

All Outputs Are Low

D SUFFIX

SOIC PACKAGE

CASE 751B–05

N SUFFIX

PLASTIC PACKAGE

CASE 648–08

ORDERING INFORMATION

MC54HCXXXXAJ
MC74HCXXXXAN
MC74HCXXXXAD
MC74HCXXXXADT

Ceramic
Plastic
SOIC
TSSOP

1

16

1

16

1

16

DT SUFFIX

TSSOP PACKAGE

CASE 948F–01

J SUFFIX

CERAMIC PACKAGE

CASE 620–10

1

16

MC54/74HC4040A

MOTOROLA High–Speed CMOS Logic Data

DL129 — Rev 6

2

MAXIMUM RATINGS*

Symbol

Parameter

Value

Unit

V

CC

DC Supply Voltage (Referenced to GND)

– 0.5 to + 7.0

V

V

in

DC Input Voltage (Referenced to GND)

– 0.5 to VCC + 0.5

V

V

out

DC Output Voltage (Referenced to GND)

– 0.5 to VCC + 0.5

V

I

in

DC Input Current, per Pin

± 20

mA

I

out

DC Output Current, per Pin

± 25

mA

I

CC

DC Supply Current, VCC and GND Pins

± 50

mA

P

D

Power Dissipation in Still Air,Plastic or Ceramic DIP†

SOIC Package†

TSSOP Package†

750
500
450

mW

T

stg

Storage Temperature Range

– 65 to + 150

_

C

T

L

Lead Temperature, 1 mm from Case for 10 Seconds

Plastic DIP, SOIC or TSSOP Package

Ceramic DIP

260
300

_

C

*Maximum Ratings are those values beyond which damage to the device may occur.

Functional operation should be restricted to the Recommended Operating Conditions.

†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C

Ceramic DIP: – 10 mW/_C from 100_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: – 6.1 mW/_C from 65_ to 125_C

For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Min

Max

Unit

V

CC

DC Supply Voltage (Referenced to GND)

2.0

6.0

V

Vin, V

out

DC Input Voltage, Output Voltage (Referenced to GND)

0

V

CC

V

T

A

Operating Temperature Range, All Package Types

– 55

+ 125

_

C

tr, t

f

Input Rise and Fall Time VCC = 2.0 V

(Figure 1) VCC = 3.0 V

VCC = 4.5 V
VCC = 6.0 V

0
0
0
0

1000

600
500
400

ns

DC CHARACTERISTICS (Voltages Referenced to GND)

V

Guaranteed Limit

Symbol

Parameter

Condition

V

CC
V

–55 to 25°C ≤85°C ≤125°C

Unit

V

IH

Minimum High–Level Input Voltage V

out

= 0.1V or VCC –0.1V

|I

out

| ≤ 20µA

2.0

3.0

4.5

6.0

1.50

2.10

3.15

4.20

1.50

2.10

3.15

4.20

1.50

2.10

3.15

4.20

V

V

IL

Maximum Low–Level Input Voltage V

out

= 0.1V or VCC – 0.1V

|I

out

| ≤ 20µA

2.0

3.0

4.5

6.0

0.50

0.90

1.35

1.80

0.50

0.90

1.35

1.80

0.50

0.90

1.35

1.80

V

V

OH

Minimum High–Level Output
Voltage

Vin = VIH or V

IL

|I

out

| ≤ 20µA

2.0

4.5

6.0

1.9

4.4

5.9

1.9

4.4

5.9

1.9

4.4

5.9

V

Vin =VIH or V

IL

|I

out

| ≤ 2.4mA

|I

out

| ≤ 4.0mA

|I

out

| ≤ 5.2mA

3.0

4.5

6.0

2.48

3.98

5.48

2.34

3.84

5.34

2.20

3.70

5.20

V

OL

Maximum Low–Level Output
Voltage

Vin = VIH or V

IL

|I

out

| ≤ 20µA

2.0

4.5

6.0

0.1

0.1

0.1

0.1

0.1

0.1

0.1

0.1

0.1

V

This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir­cuit. For proper operation, Vin and
V

out

should be constrained to the

range GND v (Vin or V

out

) v VCC.

Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.

MC54/74HC4040A

High–Speed CMOS Logic Data
DL129 — Rev 6

3 MOTOROLA

DC CHARACTERISTICS (Voltages Referenced to GND)

Symbol Unit

Guaranteed Limit

V

CC
V

ConditionParameter

Symbol Unit≤125°C≤85°C–55 to 25°C

V

CC
V

ConditionParameter

Vin = VIH or V

IL

|I

out

| ≤ 2.4mA

|I

out

| ≤ 4.0mA

|I

out

| ≤ 5.2mA

3.0

4.5

6.0

0.26

0.26

0.26

0.33

0.33

0.33

0.40

0.40

0.40

I

in

Maximum Input Leakage Current Vin = VCC or GND 6.0 ±0.1 ±1.0 ±1.0 µA

I

CC

Maximum Quiescent Supply
Current (per Package)

Vin = VCC or GND
I

out

= 0µA

6.0 4 40 160 µA

NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).

AC CHARACTERISTICS (C

L

= 50 pF, Input tr = tf = 6 ns)

Guaranteed Limit

Symbol

Parameter

V

CC
V

–55 to 25°C ≤85°C ≤125°C

Unit

f

max

Maximum Clock Frequency (50% Duty Cycle)
(Figures 1 and 4)

2.0

3.0

4.5

6.0

10
15
30
50

9.0
14
28
45

8.0
12
25
40

MHz

t

PLH

,

t

PHL

Maximum Propagation Delay, Clock to Q1*
(Figures 1 and 4)

2.0

3.0

4.5

6.0

96
63
31
25

106

71
36
30

115

88
40
35

ns

t

PHL

Maximum Propagation Delay, Reset to Any Q
(Figures 2 and 4)

2.0

3.0

4.5

6.0

45
30
30
26

52
36
35
32

65
40
40
35

ns

t

PLH

,

t

PHL

Maximum Propagation Delay, Qn to Qn+1
(Figures 3 and 4)

2.0

3.0

4.5

6.0

69
40
17
14

80
45
21
15

90
50
28
22

ns

t

TLH

,

t

THL

Maximum Output Transition Time, Any Output
(Figures 1 and 4)

2.0

3.0

4.5

6.0

75
27
15
13

95
32
19
15

110

36
22
19

ns

C

in

Maximum Input Capacitance 10 10 10 pF

NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the Motorola High–

Speed CMOS Data Book (DL129/D).

* For TA = 25°C and CL = 50 pF, typical propagation delay from Clock to other Q outputs may be calculated with the following equations:

VCC = 2.0 V: tP = [93.7 + 59.3 (n–1)] ns VCC = 4.5 V: tP = [30.25 + 14.6 (n–1)] ns
VCC = 3.0 V: tP = [61.5 + 34.4 (n–1)] ns VCC = 6.0V: tP = [24.4 + 12 (n–1)] ns

Typical @ 25°C, VCC = 5.0 V

C

PD

Power Dissipation Capacitance (Per Package)*

31

pF

*Used to determine the no–load dynamic power consumption: PD = CPD V

CC

2

f + ICC VCC. For load considerations, see Chapter 2 of the

Motorola High–Speed CMOS Data Book (DL129/D).