Motorola MC54HC393J, MC74HC393N, MC74HC393D Datasheet
SEMICONDUCTOR TECHNICAL DATA
1
REV 6
Motorola, Inc. 1995
10/95
High–Performance Silicon–Gate CMOS
The MC54/74HC393 is identical in pinout to the LS393. The device inputs
are compatible with standard CMOS outputs; with pullup resistors, they are
compatible with LSTTL outputs.
This device consists of two independent 4–bit binary ripple counters with
parallel outputs from each counter stage. A ÷ 256 counter can be obtained
by cascading the two binary counters.
Internal flip–flops are triggered by high–to–low transitions of the clock
input. Reset for t he counters is asynchronous and active–high. S tate
changes of the Q outputs do not occur simultaneously because of internal
ripple delays. Therefore, decoded output signals are subject to decoding
spikes and should not be used as clocks or as strobes except when gated
with the Clock of the HC393.
• Output Drive Capability: 10 LSTTL Loads
• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2 to 6 V
• Low Input Current: 1 µA
• High Noise Immunity Characteristic of CMOS Devices
• In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
• Chip Complexity: 236 FETs or 59 Equivalent Gates
LOGIC DIAGRAM
Q1
Q2
Q3
Q4
CLOCK
RESET
1, 13
2, 12
3, 11
4, 10
5, 9
6, 8
PIN 14 = V
CC
PIN 7 = GND
BINARY
COUNTER
PIN ASSIGNMENT
FUNCTION TABLE
Inputs
Clock Reset Outputs
X H L
H L No Change
L L No Change
L No Change
L Advance to
Next State
11
12
13
14
8
9
105
4
3
2
1
7
6
Q2
b
Q1
b
RESET b
CLOCK b
V
CC
Q4
b
Q3
b
Q2
a
Q1
a
RESET a
CLOCK a
GND
Q3
a
Q4
a
D SUFFIX
SOIC PACKAGE
CASE 751A–03
N SUFFIX
PLASTIC PACKAGE
CASE 646–06
ORDERING INFORMATION
MC54HCXXXJ
MC74HCXXXN
MC74HCXXXD
Ceramic
Plastic
SOIC
1
14
1
14
J SUFFIX
CERAMIC PACKAGE
CASE 632–08
1
14
MC54/74HC393
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V
in
DC Input Voltage (Referenced to GND)
– 1.5 to VCC + 1.5
V
V
out
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
I
in
DC Input Current, per Pin
± 20
mA
I
out
DC Output Current, per Pin
± 25
mA
I
CC
DC Supply Current, VCC and GND Pins
± 50
mA
P
D
Power Dissipation in Still Air,Plastic or Ceramic DIP†
SOIC Package†
750
500
mW
T
stg
Storage Temperature
– 65 to + 150
_
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic or SOIC DIP)
(Ceramic DIP)
260
300
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
Vin, V
out
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature, All Package Types
– 55
+ 125
_
C
tr, t
f
Input Rise and Fall Time VCC = 2.0 V
(Figure 1) VCC = 4.5 V
VCC = 6.0 V
0
0
0
1000
500
400
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
CC
V
– 55 to
25_C
v
85_Cv 125_C
Unit
V
IH
Minimum High–Level Input
Voltage
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
V
IL
Maximum Low–Level Input
Voltage
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
2.0
4.5
6.0
0.3
0.9
1.2
0.3
0.9
1.2
0.3
0.9
1.2
V
Vin = VIH or V
IL
|I
out
| v 20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
Vin = VIH or VIL|I
out
| v 4.0 mA
|I
out
| v 5.2 mA
4.5
6.0
3.98
5.48
3.84
5.34
3.70
5.20
Vin = VIH or V
IL
|I
out
| v 20 µA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
Vin = VIH or VIL|I
out
| v 4.0 mA
|I
out
| v 5.2 mA
4.5
6.0
0.26
0.26
0.33
0.33
0.40
0.40
I
in
Maximum Input Leakage Current
Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
µA
I
CC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
I
out
= 0 µA
6.0
8
80
160
µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
V
OH
V
OL
Minimum High–Level Output
Voltage
Maximum Low–Level Output
Voltage
V
V
MC54/74HC393
High–Speed CMOS Logic Data
DL129 — Rev 6
3 MOTOROLA
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input tr = tf = 6 ns)
Guaranteed Limit
Symbol
Parameter
V
CC
V
– 55 to
25_C
v
85_Cv 125_C
Unit
f
max
Maximum Clock Frequency (50% Duty Cycle)
(Figures 1 and 3)
2.0
4.5
6.0
5.4
27
32
4.4
22
26
3.6
18
21
MHz
t
PLH
,
t
PHL
Maximum Propagation Delay, Clock to Q1
(Figures 1 and 3)
2.0
4.5
6.0
120
24
20
150
30
26
180
36
31
ns
t
PLH
,
t
PHL
Maximum Propagation Delay, Clock to Q2
(Figures 1 and 3)
2.0
4.5
6.0
190
38
32
240
48
41
285
57
48
ns
t
PLH
,
t
PHL
Maximum Propagation Delay, Clock to Q3
(Figures 1 and 3)
2.0
4.5
6.0
240
48
41
300
60
51
360
72
61
ns
t
PLH
,
t
PHL
Maximum Propagation Delay, Clock to Q4
(Figures 1 and 3)
2.0
4.5
6.0
290
58
49
365
73
62
435
87
74
ns
t
PHL
Maximum Propagation Delay, Reset to any Q
(Figures 2 and 3)
2.0
4.5
6.0
165
33
28
205
41
35
250
50
43
ns
t
TLH
,
t
THL
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
2.0
4.5
6.0
75
15
13
95
19
16
110
22
19
ns
C
in
Maximum Input Capacitance
—
10
10
10
pF
NOTES:
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
40
*Used to determine the no–load dynamic power consumption: PD = CPD V
CC
2
f + ICC VCC. For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
TIMING REQUIREMENTS (Input t
r
= tf = 6 ns)
Guaranteed Limit
Symbol
Parameter
V
CC
V
– 55 to
25_C
v
85_Cv 125_C
Unit
t
rec
Minimum Recovery Time, Reset Inactive to Clock
(Figure 2)
2.0
4.5
6.0
50
10
9
65
13
11
75
15
13
ns
t
w
Minimum Pulse Width, Clock
(Figure 1)
2.0
4.5
6.0
80
16
14
100
20
17
120
24
20
ns
t
w
Minimum Pulse Width, Reset
(Figure 2)
2.0
4.5
6.0
125
25
21
155
31
26
190
38
32
ns
tr, t
f
Maximum Input Rise and Fall Times
(Figure 1)
2.0
4.5
6.0
1000
500
400
1000
500
400
1000
500
400
ns
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
C
PD
Power Dissipation Capacitance (Per Counter)*
pF
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