Motorola MC54HC366J Datasheet

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SEMICONDUCTOR TECHNICAL DATA

1

REV 6

 Motorola, Inc. 1995

10/95

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High–Performance Silicon–Gate CMOS

The MC54/74HC366 is identical in pinout to the LS366. The device inputs
are compatible with standard CMOS outputs; with pullup resistors, they are
compatible with LSTTL outputs.

This device is a high–speed h ex buffer with 3–state outputs a nd two
common active–low Output Enables. When either of the enables is high, the
buffer outputs are placed into high–impedance states. The HC366 has
inverting outputs.

• Output Drive Capability: 15 LSTTL Loads

• Outputs Directly Interface to CMOS, NMOS, and TTL

• Operating Voltage Range: 2 to 6 V

• Low Input Current: 1 µA

• High Noise Immunity Characteristic of CMOS Devices

• In Compliance with the Requirements Defined by JEDEC Standard

No. 7A

• Chip Complexity: 78 FETs or 19.5 Equivalent Gates

LOGIC DIAGRAM

A3

A4

A5

A0

A1

A2

2

4

6

10

12

14

OUTPUT ENABLE 1

1

15

PIN 16 = V

CC

PIN 8 = GND

OUTPUT ENABLE 2

Y3

Y4

Y5

Y0

Y1

Y2

3

5

7

9

11

13



PIN ASSIGNMENT

13

14

15

16

9

10

11

125

4

3

2

1

8

7

6

A4

Y5

A5

OUTPUT
ENABLE 2

V

CC

Y3

A3

Y4

A1

Y0

A0

OUTPUT

ENABLE 1

GND

Y2

A2

Y1

FUNCTION TABLE

Inputs Output

Enable Enable

1 2 A Y

L L L H
L L H L
H X X Z
X H X Z

X = don’t care
Z = high impedance

N SUFFIX

PLASTIC PACKAGE

CASE 648–08

1

16

J SUFFIX

CERAMIC PACKAGE

CASE 620–10

1

16

ORDERING INFORMATION

MC54HCXXXJ
MC74HCXXXN

Ceramic
Plastic

MC54/74HC366

MOTOROLA High–Speed CMOS Logic Data

DL129 — Rev 6

2

MAXIMUM RATINGS*

Symbol

Parameter

Value

Unit

V

CC

DC Supply Voltage (Referenced to GND)

– 0.5 to + 7.0

V

V

in

DC Input Voltage (Referenced to GND)

– 1.5 to VCC + 1.5

V

V

out

DC Output Voltage (Referenced to GND)

– 0.5 to VCC + 0.5

V

I

in

DC Input Current, per Pin

± 20

mA

I

out

DC Output Current, per Pin

± 35

mA

I

CC

DC Supply Current, VCC and GND Pins

± 75

mA

P

D

Power Dissipation in Still Air,Plastic or Ceramic DIP†

750

mW

T

stg

Storage Temperature

– 65 to + 150

_

C

T

L

Lead Temperature, 1 mm from Case for 10 Seconds

(Plastic DIP)

(Ceramic DIP)

260
300

_

C

*Maximum Ratings are those values beyond which damage to the device may occur.

Functional operation should be restricted to the Recommended Operating Conditions.

†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C

Ceramic DIP: – 10 mW/_C from 100_ to 125_C

For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Min

Max

Unit

V

CC

DC Supply Voltage (Referenced to GND)

2.0

6.0

V

Vin, V

out

DC Input Voltage, Output Voltage (Referenced to GND)

0

V

CC

V

T

A

Operating Temperature, All Package Types

– 55

+ 125

_

C

tr, t

f

Input Rise and Fall Time VCC = 2.0 V

(Figure 1) VCC = 4.5 V

VCC = 6.0 V

0
0
0

1000

500
400

ns

DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

Guaranteed Limit

Symbol

Parameter

Test Conditions

V

CC
V

– 55 to

25_C

v

85_Cv 125_C

Unit

V

IH

Minimum High–Level Input
Voltage

V

out

= 0.1 V

|I

out

| v 20 µA

2.0

4.5

6.0

1.5

3.15

4.2

1.5

3.15

4.2

1.5

3.15

4.2

V

V

IL

Maximum Low–Level Input
Voltage

V

out

= VCC – 0.1 V

|I

out

| v 20 µA

2.0

4.5

6.0

0.3

0.9

1.2

0.3

0.9

1.2

0.3

0.9

1.2

V

V

OH

Minimum High–Level Output
Voltage

Vin = V

IL

|I

out

| v 20 µA

2.0

4.5

6.0

1.9

4.4

5.9

1.9

4.4

5.9

1.9

4.4

5.9

V

Vin = V

IL

|I

out

| v 6.0 mA

|I

out

| v 7.8 mA

4.5

6.0

3.98

5.48

3.84

5.34

3.70

5.20

V

OL

Maximum Low–Level Output
Voltage

Vin = V

IH

|I

out

| v 20 µA

2.0

4.5

6.0

0.1

0.1

0.1

0.1

0.1

0.1

0.1

0.1

0.1

V

Vin = V

IH

|I

out

| v 6.0 mA

|I

out

| v 7.8 mA

4.5

6.0

0.26

0.26

0.33

0.33

0.40

0.40

I

in

Maximum Input Leakage Current

Vin = VCC or GND

6.0

± 0.1

± 1.0

± 1.0

µA

I

OZ

Maximum Three–State Leakage
Current

Output in High–Impedance State
Vin = VIL or V

IH

V

out

= VCC or GND

6.0

± 0.5

± 5.0

± 10

µA

I

CC

Maximum Quiescent Supply
Current (per Package)

Vin = VCC or GND
I

out

= 0 µA

6.0

8

80

160

µA

NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).

This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir­cuit. For proper operation, Vin and
V

out

should be constrained to the

range GND v (Vin or V

out

) v VCC.

Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.