SEMICONDUCTOR TECHNICAL DATA
1
REV 6
Motorola, Inc. 1995
10/95
& "" $ "
# %" !
High–Performance Silicon–Gate CMOS
The MC54/74HC365 is identical in pinout to the LS365. The device inputs
are compatible with standard CMOS outputs; with pullup resistors, they are
compatible with LSTTL outputs.
This device is a high–speed h ex buffer with 3–state outputs and two
common active–low Output Enables. When either of the enables is high, the
buffer outputs are placed into high–impedance states. The HC365 has
noninverting outputs.
• Output Drive Capability: 15 LSTTL Loads
• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2 to 6 V
• Low Input Current: 1 µA
• High Noise Immunity Characteristic of CMOS Devices
• In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
• Chip Complexity: 90 FETs or 22.5 Equivalent Gates
LOGIC DIAGRAM
A3
A4
A5
A0
A1
A2
2
4
6
10
12
14
OUTPUT ENABLE 1
1
15
PIN 16 = V
CC
PIN 8 = GND
OUTPUT ENABLE 2
Y3
Y4
Y5
Y0
Y1
Y2
3
5
7
9
11
13
PIN ASSIGNMENT
FUNCTION TABLE
X = don’t care
Z = high impedance
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
A4
Y5
A5
OUTPUT
ENABLE 2
V
CC
Y3
A3
Y4
A1
Y0
A0
OUTPUT
ENABLE 1
GND
Y2
A2
Y1
Inputs Output
Enable1Enable
2 A Y
L
L
H
X
L
L
X
H
L
H
X
X
L
H
Z
Z
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
ORDERING INFORMATION
MC54HCXXXJ
MC74HCXXXN
MC74HCXXXDT
Ceramic
Plastic
TSSOP
1
16
1
16
DT SUFFIX
TSSOP PACKAGE
CASE 948F–01
J SUFFIX
CERAMIC PACKAGE
CASE 620–10
1
16
MC54/74HC365
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V
in
DC Input Voltage (Referenced to GND)
– 1.5 to VCC + 1.5
V
V
out
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
I
in
DC Input Current, per Pin
± 20
mA
I
out
DC Output Current, per Pin
± 35
mA
I
CC
DC Supply Current, VCC and GND Pins
± 75
mA
P
D
Power Dissipation in Still Air,Plastic or Ceramic DIP†
TSSOP Package†
750
450
mW
T
stg
Storage Temperature
– 65 to + 150
_
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or TSSOP Package)
(Ceramic DIP)
260
300
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C
TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
Vin, V
out
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature, All Package Types
– 55
+ 125
_
C
tr, t
f
Input Rise and Fall Time VCC = 2.0 V
(Figure 1) VCC = 4.5 V
VCC = 6.0 V
0
0
0
1000
500
400
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
CC
V
– 55 to
25_C
v
85_Cv 125_C
Unit
V
IH
Minimum High–Level Input
Voltage
V
out
= VCC – 0.1 V
|I
out
| v 20 µA
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
V
IL
Maximum Low–Level Input
Voltage
V
out
= 0.1 V
|I
out
| v 20 µA
2.0
4.5
6.0
0.3
0.9
1.2
0.3
0.9
1.2
0.3
0.9
1.2
V
Vin = V
IH
|I
out
| v 20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
Vin = V
IH
|I
out
| v 6.0 mA
|I
out
| v 7.8 mA
4.5
6.0
3.98
5.48
3.84
5.34
3.70
5.20
Vin = V
IL
|I
out
| v 20 µA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
Vin = V
IL
|I
out
| v 6.0 mA
|I
out
| v 7.8 mA
4.5
6.0
0.26
0.26
0.33
0.33
0.40
0.40
I
in
Maximum Input Leakage Current
Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
µA
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
V
OH
V
OL
Minimum High–Level Output
Voltage
Maximum Low–Level Output
Voltage
V
V
MC54/74HC365
High–Speed CMOS Logic Data
DL129 — Rev 6
3 MOTOROLA
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Unit
Guaranteed Limit
V
CC
V
Test Conditions
Parameter
Symbol
Unit
v
125_C
v
85_C
– 55 to
25_C
V
CC
V
Test Conditions
Parameter
Symbol
I
OZ
Maximum Three–State
Leakage Current
Output in High–Impedance State
Vin = VIL or V
IH
V
out
= VCC or GND
6.0
± 0.5
± 5.0
± 10
µA
I
CC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
I
out
= 0 µA
6.0
8
80
160
µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input tr = tf = 6 ns)
Guaranteed Limit
Symbol
Parameter
V
CC
V
– 55 to
25_C
v
85_Cv 125_C
Unit
t
PLH
,
t
PHL
Maximum Propagation Delay, Input A to Output Y
(Figures 1 and 3)
2.0
4.5
6.0
120
24
20
150
30
26
180
36
31
ns
t
PLZ
,
t
PHZ
Maximum Propagation Delay, Output Enable to Output Y
(Figures 2 and 4)
2.0
4.5
6.0
220
44
37
275
55
47
330
66
56
ns
t
PZL
,
t
PZH
Maximum Propagation Delay, Output Enable to Output Y
(Figures 2 and 4)
2.0
4.5
6.0
220
44
37
275
55
47
330
66
56
ns
t
TLH
,
t
THL
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
2.0
4.5
6.0
60
12
10
75
15
13
90
18
15
ns
C
in
Maximum Input Capacitance
—
10
10
10
pF
C
out
Maximum Three–State Output Capacitance
(Output in High–Impedance State)
—
15
15
15
pF
NOTES:
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
40
*Used to determine the no–load dynamic power consumption: PD = CPD V
CC
2
f + ICC VCC. For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
SWITCHING WAVEFORMS
V
CC
GND
t
f
t
r
INPUT A
OUTPUT Y
10%
50%
90%
10%
50%
90%
t
TLH
t
PLH
t
PHL
t
THL
OUTPUT ENABLE
OUTPUT Y
OUTPUT Y
50%
50%
50%
90%
10%
t
PZL
t
PLZ
t
PZHtPHZ
V
CC
GND
HIGH
IMPEDANCE
V
OL
V
OH
HIGH
IMPEDANCE
Figure 1. Figure 2.
C
PD
Power Dissipation Capacitance (Per Buffer)*
pF
MC54/74HC365
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
4
TEST CIRCUITS
*Includes all probe and jig capacitance
CL*
TEST POINT
DEVICE
UNDER
TEST
OUTPUT
*Includes all probe and jig capacitance
CL*
TEST POINT
DEVICE
UNDER
TEST
OUTPUT
CONNECT TO VCC WHEN
TESTING t
PLZ
AND t
PZL
.
CONNECT TO GND WHEN
TESTING t
PHZ
AND t
PZH
.
1 k
Ω
Figure 3. Figure 4.
INPUT A
OUTPUT ENABLE 1
OUTPUT ENABLE 2
V
CC
TO OTHERS
FIVE BUFFERS
Y
LOGIC DETAIL
ONE OF 6
BUFFERS
MC54/74HC365
High–Speed CMOS Logic Data
DL129 — Rev 6
5 MOTOROLA
OUTLINE DIMENSIONS
J SUFFIX
CERAMIC PACKAGE
CASE 620–10
ISSUE V
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
ISSUE R
19.05
6.10
—
0.39
1.40
0.21
3.18
19.93
7.49
5.08
0.50
1.65
0.38
4.31
0
°
0.51
15
°
1.01
1.27 BSC
2.54 BSC
7.62 BSC
MIN MINMAX MAX
INCHES MILLIMETERS
DIM
0.750
0.240
—
0.015
0.055
0.008
0.125
0.785
0.295
0.200
0.020
0.065
0.015
0.170
0.050 BSC
0.100 BSC
0.300 BSC
A
B
C
D
E
F
G
J
K
L
M
N
0
°
0.020
15
°
0.040
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
4. DIM F MAY NARROW TO 0.76 (0.030) WHERE
THE LEAD ENTERS THE CERAMIC BODY.
1 8
916
–A
–
–B
–
C
KN
G
E
F
D 16 PL
–T
–
SEATING
PLANE
M
L
J 16 PL
0.25 (0.010) T A
M
S
0.25 (0.010) T B
M
S
MIN MINMAX MAX
INCHES MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
M
S
18.80
6.35
3.69
0.39
1.02
0.21
2.80
7.50
0
°
0.51
19.55
6.85
4.44
0.53
1.77
0.38
3.30
7.74
10
°
1.01
0.740
0.250
0.145
0.015
0.040
0.008
0.110
0.295
0
°
0.020
0.770
0.270
0.175
0.021
0.070
0.015
0.130
0.305
10
°
0.040
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
2.54 BSC
1.27 BSC
0.100 BSC
0.050 BSC
–A
–
B
1 8
916
F
H
G
D
16 PL
S
C
–T
–
SEATING
PLANE
K
J
M
L
T A0.25 (0.010)
M M
MC54/74HC365
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
6
OUTLINE DIMENSIONS
DT SUFFIX
PLASTIC TSSOP PACKAGE
CASE 948F–01
ISSUE O
ÇÇ
ÇÇ
ÇÇ
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 4.90 5.10 0.193 0.200
B 4.30 4.50 0.169 0.177
C ––– 1.20 ––– 0.047
D 0.05 0.15 0.002 0.006
F 0.50 0.75 0.020 0.030
G 0.65 BSC 0.026 BSC
H 0.18 0.28 0.007 0.011
J 0.09 0.20 0.004 0.008
J1 0.09 0.16 0.004 0.006
K 0.19 0.30 0.007 0.012
K1 0.19 0.25 0.007 0.010
L 6.40 BSC 0.252 BSC
M 0 8 0 8
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH.
PROTRUSIONS OR GATE BURRS. MOLD FLASH OR
GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER
SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED
0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR PROTRUSION
SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE DETERMINED AT
DATUM PLANE –W–.
_ _ _ _
SECTION N–N
SEATING
PLANE
IDENT.
PIN 1
1
8
16
9
DETAIL E
J
J1
B
C
D
A
K
K1
H
G
DETAIL E
F
M
L
2X L/2
–U–
S
U0.15 (0.006) T
S
U0.15 (0.006) T
S
U
M
0.10 (0.004) V
S
T
0.10 (0.004)
–T–
–V–
–W–
0.25 (0.010)
16X REFK
N
N
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters can and do vary in different
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MC54/74HC365/D
*MC54/74HC365/D*
◊
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