Motorola MC54HC32AJ, MC74HC32ADT, MC74HC32AN Datasheet

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SEMICONDUCTOR TECHNICAL DATA

3–1

REV 6

 Motorola, Inc. 1995

10/95

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High–Performance Silicon–Gate CMOS

The MC54/74HC32A is identical in pinout to the LS32. The device
inputs are compatible with Standard CMOS outputs; with pullup resistors,
they are compatible with LSTTL outputs.

• Output Drive Capability: 10 LSTTL Loads

• Outputs Directly Interface to CMOS, NMOS and TTL

• Operating Voltage Range: 2 to 6V

• Low Input Current: 1µA

• High Noise Immunity Characteristic of CMOS Devices

• In Compliance With the JEDEC Standard No. 7A Requirements

• Chip Complexity: 48 FETs or 12 Equivalent Gates

3

Y1

1

A1

PIN 14 = V

CC

PIN 7 = GND

LOGIC DIAGRAM

2

B1

6

Y2

4

A2

5

B2

8

Y3

9

A3

10

B3

11

Y4

12

A4

13

B4

Y = A+B

Pinout: 14–Lead Packages (Top View)

1314 12 11 10 9 8

21 3 4 5 6 7

VCCB4 A4 Y4 B3 A3 Y3

A1 B1 Y1 A2 B2 Y2 GND

L
L
H
H

L
H
L
H



FUNCTION TABLE

Inputs Output

A B

L
H
H
H

Y

D SUFFIX

SOIC PACKAGE

CASE 751A–03

N SUFFIX

PLASTIC PACKAGE

CASE 646–06

ORDERING INFORMATION

MC54HCXXAJ
MC74HCXXAN
MC74HCXXAD
MC74HCXXADT

Ceramic
Plastic
SOIC
TSSOP

1

14

1

14

DT SUFFIX

TSSOP PACKAGE

CASE 948B–03

J SUFFIX

CERAMIC PACKAGE

CASE 632–08

1

14

1

14

MC54/74HC32A

MOTOROLA High–Speed CMOS Logic Data

DL129 — Rev 6

3–2

MAXIMUM RATINGS*

Symbol

Parameter

Value

Unit

V

CC

DC Supply Voltage (Referenced to GND)

– 0.5 to + 7.0

V

V

in

DC Input Voltage (Referenced to GND)

– 0.5 to VCC + 0.5

V

V

out

DC Output Voltage (Referenced to GND)

– 0.5 to VCC + 0.5

V

I

in

DC Input Current, per Pin

± 20

mA

I

out

DC Output Current, per Pin

± 25

mA

I

CC

DC Supply Current, VCC and GND Pins

± 50

mA

P

D

Power Dissipation in Still Air,Plastic or Ceramic DIP†

SOIC Package†

TSSOP Package†

750
500
450

mW

T

stg

Storage Temperature

– 65 to + 150

_

C

T

L

Lead Temperature, 1 mm from Case for 10 Seconds

Plastic DIP, SOIC or TSSOP Package

Ceramic DIP

260
300

_

C

*Maximum Ratings are those values beyond which damage to the device may occur.

Functional operation should be restricted to the Recommended Operating Conditions.

†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C

Ceramic DIP: – 10 mW/_C from 100_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: – 6.1 mW/_C from 65_ to 125_C

For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Min

Max

Unit

V

CC

DC Supply Voltage (Referenced to GND)

2.0

6.0

V

Vin, V

out

DC Input Voltage, Output Voltage (Referenced to GND)

0

V

CC

V

T

A

Operating Temperature, All Package Types

– 55

+ 125

_

C

tr, t

f

Input Rise and Fall Time VCC = 2.0 V

(Figure 1) VCC = 4.5 V

VCC = 6.0 V

0
0
0

1000

500
400

ns

This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir­cuit. For proper operation, Vin and
V

out

should be constrained to the

range GND v (Vin or V

out

) v VCC.

Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.

MC54/74HC32A

High–Speed CMOS Logic Data
DL129 — Rev 6

3–3 MOTOROLA

DC CHARACTERISTICS (Voltages Referenced to GND)

Guaranteed Limit

Symbol Parameter Condition

V

CC
V

–55 to 25°C ≤85°C ≤125°C Unit

V

IH

Minimum High–Level Input Voltage V

out

= 0.1V or VCC –0.1V

|I

out

| ≤ 20µA

2.0

3.0

4.5

6.0

1.50

2.10

3.15

4.20

1.50

2.10

3.15

4.20

1.50

2.10

3.15

4.20

V

V

IL

Maximum Low–Level Input Voltage V

out

= 0.1V or VCC – 0.1V

|I

out

| ≤ 20µA

2.0

3.0

4.5

6.0

0.50

0.90

1.35

1.80

0.50

0.90

1.35

1.80

0.50

0.90

1.35

1.80

V

V

OH

Minimum High–Level Output
Voltage

Vin = VIH or V

IL

|I

out

| ≤ 20µA

2.0

4.5

6.0

1.9

4.4

5.9

1.9

4.4

5.9

1.9

4.4

5.9

V

Vin =VIH or VIL|I

out

| ≤ 2.4mA

|I

out

| ≤ 4.0mA

|I

out

| ≤ 5.2mA

3.0

4.5

6.0

2.48

3.98

5.48

2.34

3.84

5.34

2.20

3.70

5.20

V

OL

Maximum Low–Level Output
Voltage

Vin = VIH or V

IL

|I

out

| ≤ 20µA

2.0

4.5

6.0

0.1

0.1

0.1

0.1

0.1

0.1

0.1

0.1

0.1

V

Vin = VIH or VIL|I

out

| ≤ 2.4mA

|I

out

| ≤ 4.0mA

|I

out

| ≤ 5.2mA

3.0

4.5

6.0

0.26

0.26

0.26

0.33

0.33

0.33

0.40

0.40

0.40

I

in

Maximum Input Leakage Current Vin = VCC or GND 6.0 ±0.1 ±1.0 ±1.0 µA

I

CC

Maximum Quiescent Supply
Current (per Package)

Vin = VCC or GND
I

out

= 0µA

6.0 1.0 10 40 µA

NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).

AC CHARACTERISTICS (C

L

= 50pF, Input tr = tf = 6ns)

Guaranteed Limit

Symbol Parameter

V

CC
V

–55 to 25°C ≤85°C ≤125°C Unit

t

PLH

,

t

PHL

Maximum Propagation Delay, Input A or B to Output Y
(Figures 1 and 2)

2.0

3.0

4.5

6.0

75
30
15
13

95
40
19
16

110

55
22
19

ns

t

TLH

,

t

THL

Maximum Output Transition Time, Any Output
(Figures 1 and 2)

2.0

3.0

4.5

6.0

75
27
15
13

95
32
19
16

110

36
22
19

ns

C

in

Maximum Input Capacitance 10 10 10 pF

NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the Motorola High–

Speed CMOS Data Book (DL129/D).

Typical @ 25°C, VCC = 5.0 V, VEE = 0 V

C

PD

Power Dissipation Capacitance (Per Buffer)*

20

pF

*Used to determine the no–load dynamic power consumption: PD = CPD V

CC

2

f + ICC VCC. For load considerations, see Chapter 2 of the

Motorola High–Speed CMOS Data Book (DL129/D).