SEMICONDUCTOR TECHNICAL DATA
!
High–Performance Silicon–Gate CMOS
The MC54/74HC273A is identical in pinout to the LS273. The device
inputs are compatible with standard CMOS outputs; with pullup resistors,
they are compatible with LSTTL outputs.
This device consists of eight D flip–flops with common Clock and Reset
inputs. Each flip–flop is loaded with a low–to–high transition of the Clock
input. Reset is asynchronous and active low.
• Output Drive Capability: 10 LSTTL Loads
• Outputs Directly Interface to CMOS, NMOS and TTL
• Operating Voltage Range: 2.0 to 6.0 V
• Low Input Current: 1.0 µA
• High Noise Immunity Characteristic of CMOS Devices
• In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
• Chip Complexity: 264 FETs or 66 Equivalent Gates
LOGIC DIAGRAM
2
Q0
5
Q1
6
Q2
9
Q3
12
15
16
19
NONINVERTING
Q4
Q5
Q6
Q7
PIN 20 = V
PIN 10 = GND
OUTPUTS
CC
DATA
INPUTS
D0
D1
D2
D3
D4
D5
D6
D7
CLOCK
RESET
3
4
7
8
13
14
17
18
11
1
J SUFFIX
20
1
20
1
20
1
20
1
ORDERING INFORMATION
MC54HCXXXAJ
MC74HCXXXAN
MC74HCXXXADW
MC74HCXXXADT
PIN ASSIGNMENT
RESET
Q0
D0
D1
Q1 5
Q2
D2
D3
Q3
GND
CERAMIC PACKAGE
CASE 732–03
PLASTIC PACKAGE
CASE 738–03
DW SUFFIX
SOIC PACKAGE
CASE 751D–04
TSSOP PACKAGE
CASE 948E–02
1
2
3
4
20
19
18
17
16
6
7
8
9
10
15
14
13
12
11
N SUFFIX
DT SUFFIX
Ceramic
Plastic
SOIC
TSSOP
V
CC
Q7
D7
D6
Q6
Q5
D5
D4
Q4
CLOCK
Design Criteria
Internal Gate Count*
Internal Gate Propagation Delay
Internal Gate Power Dissipation
ООООООООО
Speed Power Product
* Equivalent to a two–input NAND gate.
2/97
Motorola, Inc. 1997
3–1
Value
66
1.5
5.0
ÎÎ
.0075
Units
ea
ns
µW
Î
pJ
FUNCTION TABLE
Inputs Output
Reset Clock D Q
LXX L
HHH
HLL
H L X No Change
H X No Change
REV 7
MC54/74HC273A
MAXIMUM RATINGS*
Symbol
V
V
Î
Î
T
Î
Î
Î
DC Supply Voltage (Referenced to GND)
CC
V
DC Input Voltage (Referenced to GND)
in
DC Output Voltage (Referenced to GND)
out
I
DC Input Current, per Pin
in
I
DC Output Current, per Pin
out
I
DC Supply Current, VCC and GND Pins
CC
P
Power Dissipation in Still Air, Plastic or Ceramic DIP†
D
ОООООООООООО
ОООООООООООО
Storage Temperature
stg
ОООООООООООО
T
Lead Temperature, 1 mm from Case for 10 Seconds
L
ОООООООООООО
ОООООООООООО
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
Parameter
SOIC Package†
TSSOP Package†
Plastic DIP, SOIC or TSSOP Package
(Ceramic DIP)
Value
– 0.5 to + 7.0
– 0.5 to VCC + 0.5
– 0.5 to VCC + 0.5
± 20
± 25
± 50
750
500
ÎÎÎÎ
450
ÎÎÎÎ
– 65 to + 150
ÎÎÎÎ
ÎÎÎÎ
260
300
ÎÎÎÎ
Unit
V
V
V
mA
mA
mA
mW
Î
Î
_
C
Î
_
C
Î
Î
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
V
should be constrained to the
out
range GND v (Vin or V
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
) v VCC.
out
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
Vin, V
T
A
tr, t
ÎÎ
ÎÎ
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
out
Operating Temperature, All Package Types
Input Rise and Fall Time VCC = 2.0 V
f
(Figure 1) VCC = 4.5 V
ОООООООООООО
ОООООООООООО
Parameter
VCC = 6.0 V
Min
2.0
0
– 55
0
0
Î
0
Î
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbol
ÎÎ
V
IH
ÎÎ
ÎÎ
V
IL
ÎÎ
ÎÎ
V
OH
ÎÎ
ÎÎ
ÎÎ
ООООООО
Minimum High–Level Input
ООООООО
Voltage
ООООООО
Maximum Low–Level Input
ООООООО
Voltage
ООООООО
Minimum High–Level Output
Voltage
ООООООО
ООООООО
ООООООО
Parameter
Test Conditions
ООООООО
V
= VCC – 0.1 V
out
ООООООО
|I
| v 20 µA
out
ООООООО
V
= 0.1 V
out
ООООООО
|I
| v 20 µA
out
ООООООО
Vin = V
IH
|I
| v 20 µA
out
ООООООО
Vin = V
IH
ООООООО
ООООООО
|I
| v 2.4 mA
out
|I
| v 6.0 mA
out
|I
| v 7.8 mA
out
Max
6.0
V
CC
+ 125
1000
500
Î
400
Î
Unit
V
V
_
C
ns
Î
Î
V
CC
V
ÎÎ
2.0
ÎÎ
3.0
4.5
ÎÎ
6.0
2.0
ÎÎ
3.0
4.5
ÎÎ
6.0
2.0
4.5
ÎÎ
6.0
3.0
ÎÎ
4.5
6.0
ÎÎ
Guaranteed Limit
– 55 to
25_C
ÎÎ
ÎÎ
ÎÎ
1.5
2.1
3.15
ÎÎ
ÎÎ
ÎÎ
4.2
0.5
ÎÎ
ÎÎ
0.9
1.35
1.8
ÎÎ
ÎÎ
1.9
4.4
ÎÎ
5.9
ÎÎ
2.48
ÎÎ
ÎÎ
3.98
5.48
ÎÎ
ÎÎ
v
85_C
1.5
2.1
3.15
4.2
0.5
0.9
1.35
1.8
1.9
4.4
5.9
2.34
3.84
5.34
v
125_C
ÎÎ
1.5
ÎÎ
2.1
3.15
ÎÎ
4.2
0.5
ÎÎ
0.9
1.35
ÎÎ
1.8
1.9
4.4
ÎÎ
5.9
2.2
ÎÎ
3.7
5.2
ÎÎ
Unit
Î
Î
Î
Î
Î
Î
Î
Î
V
V
V
MOTOROLA High–Speed CMOS Logic Data
3–2
DL129 — Rev 6
MC54/74HC273A
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
V
Symbol
V
OL
ÎÎ
ÎÎÎОООООООÎООООООО
I
in
I
OZ
ÎÎ
I
CC
ÎÎ
Maximum Low–Level Output
Voltage
ООООООО
Maximum Input Leakage Current
Maximum Three–State Leakage
Current
ООООООО
Maximum Quiescent Supply
Current (per Package)
ООООООО
Parameter
Output in High–Impedance State
Test Conditions
Vin = V
IL
|I
| v 20 µA
out
ООООООО
Vin = V
IL
|I
| v 2.4 mA
out
|I
| v 6.0 mA
out
|I
| v 7.8 mA
out
Vin = VCC or GND
Vin = VIL or V
ООООООО
V
= VCC or GND
out
IH
Vin = VCC or GND
I
= 0 µA
out
ООООООО
CC
2.0
4.5
6.0
ÎÎ
3.0
4.5
ÎÎ
6.0
6.0
6.0
ÎÎ
6.0
ÎÎ
NOTE:Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
– 55 to
V
25_C
0.1
0.1
0.1
ÎÎ
0.26
0.26
ÎÎ
0.26
± 0.1
± 0.5
ÎÎ
4.0
ÎÎ
v
85_C
0.1
0.1
0.1
ÎÎ
0.33
0.33
ÎÎ
0.33
± 1.0
± 5.0
ÎÎ
40
ÎÎ
v
125_C
0.1
0.1
0.1
ÎÎ
0.4
0.4
ÎÎ
0.4
± 1.0
± 10
ÎÎ
160
ÎÎ
Unit
V
Î
Î
µA
µA
Î
µA
Î
AC ELECTRICAL CHARACTERISTICS (C
= 50 pF, Input tr = tf = 6.0 ns)
L
Guaranteed Limit
Symbol
ÎÎ
f
max
ÎÎ
ÎÎ
t
PLH
t
PHL
ÎÎ
ÎÎ
t
PHL
ÎÎ
ÎÎ
t
TLH
t
THL
ÎÎ
ÎÎ
C
in
ÎÎ
V
ООООООООООООООО
Parameter
Maximum Clock Frequency (50% Duty Cycle)
(Figures 1 and 4)
ООООООООООООООО
ООООООООООООООО
Maximum Propagation Delay, Clock to Q
(Figures 1 and 4)
ООООООООООООООО
ООООООООООООООО
Maximum Propagation Delay, Reset to Q
(Figures 2 and 4)
ООООООООООООООО
ООООООООООООООО
Maximum Output Transition Time, Any Output
(Figures 1 and 4)
ООООООООООООООО
ООООООООООООООО
Maximum Input Capacitance
ОООООООООООООООООО
CC
ÎÎ
2.0
3.0
ÎÎ
4.5
6.0
ÎÎ
2.0
3.0
ÎÎ
4.5
6.0
ÎÎ
2.0
3.0
ÎÎ
4.5
6.0
ÎÎ
2.0
3.0
ÎÎ
4.5
6.0
ÎÎ
– 55 to
V
25_C
ÎÎ
6.0
15
ÎÎ
30
35
ÎÎ
145
90
ÎÎ
29
25
ÎÎ
145
90
ÎÎ
29
25
ÎÎ
75
27
ÎÎ
15
13
ÎÎ
ÎÎ10ÎÎ
v
85_C
ÎÎ
5.0
10
ÎÎ
24
28
ÎÎ
180
120
ÎÎ
36
31
ÎÎ
180
120
ÎÎ
36
31
ÎÎ
95
32
ÎÎ
19
16
ÎÎ
10
v
125_C
ÎÎ
4.0
8.0
ÎÎ
20
24
ÎÎ
220
140
ÎÎ
44
38
ÎÎ
220
140
ÎÎ
44
38
ÎÎ
110
36
ÎÎ
22
19
ÎÎ
10
ÎÎ
Unit
Î
MHz
Î
Î
Î
Î
Î
Î
Î
Î
pF
Î
ns
ns
ns
NOTE:For propagation delays with loads other than 50 pF , and information on typical parametric values, see Chapter 2 of the Motorola High–
Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
C
PD
*Used to determine the no–load dynamic power consumption: PD = CPD V
Motorola High–Speed CMOS Data Book (DL129/D).
Power Dissipation Capacitance (Per Enabled Output)*
48
2
f + ICC VCC. For load considerations, see Chapter 2 of the
CC
pF
High–Speed CMOS Logic Data
DL129 — Rev 6
3–3 MOTOROLA