Motorola MC54HC165J, MC74HC165N, MC74HC165D Datasheet
SEMICONDUCTOR TECHNICAL DATA
1
REV 6
Motorola, Inc. 1995
10/95
" #"
#"#" " !"
High–Performance Silicon–Gate CMOS
The MC54/74HC165 is identical in pinout to the LS165. The device inputs
are compatible with standard CMOS outputs; with pullup resistors, they are
compatible with LSTTL outputs.
This device is an 8–bit shift register with complementary outputs from the
last stage. Data may be loaded into the register either in parallel or in serial
form. When the Serial Shift/Parallel Load
input is low, the data is loaded
asynchronously in parallel. When the Serial Shift/Parallel Load
input is high,
the data is loaded serially on the rising edge of either Clock or Clock Inhibit
(see the Function Table).
The 2–input NOR clock may be used either by combining two independent
clock sources or by designating one of the clock inputs to act as a clock
inhibit.
• Output Drive Capability: 10 LSTTL Loads
• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2 to 6 V
• Low Input Current: 1 µA
• High Noise Immunity Characteristic of CMOS Devices
• In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
• Chip Complexity: 286 FETs or 71.5 Equivalent Gates
FUNCTION TABLE
Inputs Internal Stages Output
Serial Shift/
Parallel Load
Clock
Clock
Inhibit
S
A
A – H Q
A
Q
B
Q
H
Operation
L X X X a … h a b h Asynchronous Parallel Load
H
H
L
L
L
H
X
X
L
H
Q
An
Q
An
Q
Gn
Q
Gn
Serial Shift via Clock
H
H
L
L
L
H
X
X
L
H
Q
An
Q
An
Q
Gn
Q
Gn
Serial Shift via Clock Inhibit
H
H
X
H
H
X
X
X
X
X
No Change Inhibited Clock
H L L X X No Change No Clock
X = don’t care
QAn – QGn = Data shifted from the preceding stage
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
B
C
D
CLOCK INHIBIT
V
CC
Q
H
S
A
A
F
E
CLOCK
SERIAL SHIFT/
PARALLEL LOAD
GND
Q
H
H
G
D SUFFIX
SOIC PACKAGE
CASE 751B–05
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
ORDERING INFORMATION
MC54HCXXXJ
MC74HCXXXN
MC74HCXXXD
Ceramic
Plastic
SOIC
1
16
1
16
J SUFFIX
CERAMIC PACKAGE
CASE 620–10
1
16
LOGIC DIAGRAM
PIN 16 = V
CC
PIN 8 = GND
11
12
13
14
3
4
5
6
10
A
B
C
D
E
F
G
H
S
A
PARALLEL
DATA
INPUTS
SERIAL
DATA
INPUT
SERIAL SHIFT/PARALLEL LOAD
1
2
15
CLOCK
CLOCK INHIBIT
9
7
Q
H
Q
H
SERIAL
DATA
OUTPUTS
MC54/74HC165
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V
in
DC Input Voltage (Referenced to GND)
– 1.5 to VCC + 1.5
V
V
out
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
I
in
DC Input Current, per Pin
± 20
mA
I
out
DC Output Current, per Pin
± 25
mA
I
CC
DC Supply Current, VCC and GND Pins
± 50
mA
P
D
Power Dissipation in Still Air,Plastic or Ceramic DIP†
SOIC Package†
750
500
mW
T
stg
Storage Temperature
– 65 to + 150
_
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
(Ceramic DIP)
260
300
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
Vin, V
out
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature, All Package Types
– 55
+ 125
_
C
tr, t
f
Input Rise and Fall Time VCC = 2.0 V
(Figure 1) VCC = 4.5 V
VCC = 6.0 V
0
0
0
1000
500
400
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
CC
V
– 55 to
25_C
v
85_Cv 125_C
Unit
V
IH
Minimum High–Level Input
Voltage
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
V
IL
Maximum Low–Level Input
Voltage
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
2.0
4.5
6.0
0.3
0.9
1.2
0.3
0 9
1.2
0.3
0.9
1.2
V
V
OH
Minimum High–Level Output
Voltage
Vin = VIH or V
IL
|I
out
| v 20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin = VIH or VIL|I
out
| v 4.0 mA
|I
out
| v 5.2 mA
4.5
6.0
3.98
5.48
3.84
5.34
3.70
5.20
V
V
OL
Maximum Low–Level Output
Voltage
Vin = VIH or V
IL
|I
out
| v 20 µA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIH or VIL|I
out
| v 4.0 mA
|I
out
| v 5.2 mA
4.5
6.0
0.26
0.26
0.33
0.33
0.40
0.40
I
in
Maximum Input Leakage Current
Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
µA
I
CC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
I
out
= 0 µA
6.0
8
80
160
µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
MC54/74HC165
High–Speed CMOS Logic Data
DL129 — Rev 6
3 MOTOROLA
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input tr = tf = 6 ns)
Guaranteed Limit
Symbol
Parameter
V
CC
V
– 55 to
25_C
v
85_Cv 125_C
Unit
f
max
Maximum Clock Frequency (50% Duty Cycle)
(Figures 1 and 8)
2.0
4.5
6.0
6.0
30
35
4.8
24
28
4.0
20
24
MHz
t
PLH
,
t
PHL
Maximum Propagation Delay, Clock (or Clock Inhibit) to QH or Q
H
(Figures 1 and 8)
2.0
4.5
6.0
150
30
26
190
38
33
225
45
38
ns
t
PLH
,
t
PHL
Maximum Propagation Delay, Serial Shift/Parallel Load to QH or Q
H
(Figures 2 and 8)
2.0
4.5
6.0
175
35
30
220
44
37
265
53
45
ns
t
PLH
,
t
PHL
Maximum Propagation Delay, Input H to QH or Q
H
(Figures 3 and 8)
2.0
4.5
6.0
150
30
26
190
38
33
225
45
38
ns
t
TLH
,
t
THL
Maximum Output Transition Time, Any Output
(Figures 1 and 8)
2.0
4.5
6.0
75
15
13
95
19
16
110
22
19
ns
C
in
Maximum Input Capacitance
—
10
10
10
pF
NOTES:
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
C
PD
Power Dissipation Capacitance (Per Package)*
85
pF
*Used to determine the no–load dynamic power consumption: PD = CPD V
CC
2
f + ICC VCC. For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
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