MOTOROLA MC33348D-6R2, MC33348D-4R2, MC33348D-5R2, MC33348D-1R2, MC33348D-2R2 Datasheet



SEMICONDUCTOR

TECHNICAL DATA

LITHIUM BATTERY

PROTECTION CIRCUIT

FOR

ONE CELL

SMART BATTERY PACKS

D SUFFIX

PLASTIC PACKAGE

CASE 751

(SO–8)

8

1

18

7

6

5

2

3

4

(Top View)

Cell Voltage

Test

Ground

Charge Pump
Output

PIN CONNECTIONS

Order this document by MC33348/D

Discharge Gate

Drive Output

V

CC

Charge Gate
Drive Output

Charge Gate Drive
Common/Discharge
Current Limit

1

MOTOROLA ANALOG IC DEVICE DATA

  
   
 

The MC33348 is a monolithic lithium battery protection circuit that is
designed to enhance the useful operating life of a one cell rechargeable
battery pack. Cell protection features consist of internally trimmed charge
and discharge voltage limits, discharge current limit detection with a
delayed shutdown, and a virtually zero current sleepmode state when the
cell is discharged. An additional feature includes an on–chip charge pump
for reduced MOSFET losses while charging or discharging a low cell
voltage battery pack. This protection circuit requires a minimum number of
external components and is targeted for inclusion within the battery pack.
This MC33348 is available in standard SOIC 8 lead surface mount
package.

• Internally Trimmed Charge and Discharge Voltage Limits

• Discharge Current Limit Detection with Delayed Shutdown

• Virtually Zero Current Sleepmode State when Cells are Discharged

• Charge Pump for Reduced Losses with a Low Cell Voltage Battery Pack

• Dedicated for One Cell Applications

• Minimum Components for Inclusion within the Battery Pack

• Available in a Low Profile Surface Mount Package

Ordering Information shown on following page.

Typical One Cell Smart Battery Pack

This device contains 1170 active transistors.

V

CC

Charge Pump

Output

8 Charge

Gate Drive

Output

Discharge

Gate Drive

Output

4 6 5 Charge

Gate Drive
Common/
Discharge
Current Limit

7

1

3

2

Ground

T est

MC33348

Cell

Voltage

 Motorola, Inc. 1999 Rev 2

MC33348

2

MOTOROLA ANALOG IC DEVICE DATA

ORDERING INFORMATION

Device

Charge

Overvoltage

Threshold (V)

Charge

Overvoltage

Hysteresis (mV)

Discharge
Undervoltage
Threshold (V)

Discharge

Current Limit

Threshold (mV)

Operating

Temperature Range

Package

MC33348D–1

400

MC33348D–2

4.20

2.25

200

MC33348D–3

400

–

°

°

–

MC33348D–4

4.25

300

2.28

200

T

A

= –

25° to +85°C

SO–8

MC33348D–5

400

MC33348D–6

4.35

2.30

200

NOTE: Additional threshold limit options can be made available. Consult factory for information.

MAXIMUM RATINGS

Ratings Symbol Value Unit

Input Voltage (Measured with Respect to Ground, Pin 3)

V

IR

V
Cell Voltage (Pin 1) 7.5
Test (Pin 2) 7.5
Discharge Gate Drive Output (Pin 4) 18
Charge Gate Drive Common/Discharge Current Limit (Pin 5) ±11
Charge Gate Drive Output (Pin 6) ±11
VCC (Pin 7) 7.5
Charge Pump Output (Pin 8) 10

Thermal Resistance, Junction–to–Air

R

θJA

°C/W

D Suffix, SO–8 Plastic Package, Case 751 178

Operating Junction Temperature (Note 1)

T

J

–40 to +150

°C

Storage Temperature

T

stg

–55 to +150

°C

NOTES: 1. Tested ambient temperature range for the MC33348:

T

low

= –25°CT

high

= +85°C

2.ESD data available upon request.

MC33348

3

MOTOROLA ANALOG IC DEVICE DATA

ELECTRICAL CHARACTERISTICS (V

CC

= 4.0 V , TA = 25°C, for min/max values TA is the operating junction temperature range

that applies (Note 1), unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

VOLTAGE SENSING

Cell Charging Cutoff (Pin 1 to Pin 3)

ÁÁÁÁ

ÁÁÁ

Overvoltage Threshold, V

Cell

Increasing, TA = 25°C V

th(OV)

V
–1 Suffix 4.158 4.20 4.242
–2 Suffix 4.158 4.20 4.242
–3 Suffix 4.208 4.25 4.293
–4 Suffix 4.208 4.25 4.293
–5 Suffix 4.306 4.35 4.394
–6 Suffix 4.306 4.35 4.394

Overvoltage Hysteresis V

Cell

Decreasing V

H

mV
–1 Suffix – 300 –
–2 Suffix – 300 –
–3 Suffix – 300 –
–4 Suffix – 300 –
–5 Suffix – 300 –
–6 Suffix – 300 –

Cell Discharging Cutoff (Pin 1 to Pin 3, TA = 25°C)

ÁÁÁÁ

ÁÁÁ

Undervoltage Threshold, V

Cell

Decreasing V

th(UV)

V
–1 Suffix 2.205 2.25 2.295
–2 Suffix 2.205 2.25 2.295
–3 Suffix 2.234 2.28 2.326
–4 Suffix 2.234 2.28 2.326
–5 Suffix 2.254 2.30 2.346
–6 Suffix 2.254 2.30 2.346

Input Bias Current During Cell Voltage Sample (Pin 1)

ÁÁÁÁ

I

IB

–

28

–

ÁÁÁ

µA

Cell Voltage Sampling Rate

ÁÁÁÁ

t

(smpl)

–

1.0

–

ÁÁÁ

s

CURRENT SENSING

Discharge Current Limit (Pin 3 to Pin 5, TA = 25°C)

ÁÁÁÁ

ÁÁÁ

Threshold Voltage V

th(dschg)

mV
–1 Suffix 360 400 440
–2 Suffix 180 200 220
–3 Suffix 360 400 440
–4 Suffix 180 200 220
–5 Suffix 360 400 440
–6 Suffix 180 200 220

Delay I

dly(dschg)

1.0 2.3 4.0 ms

CHARGE PUMP

Output Voltage (Pin 8, RL ≥ 1010, TA = 25°C)

ÁÁÁÁ

V

O

8.0

10.2

12

ÁÁÁ

V

TOTAL DEVICE

БББББББББББББББББ

Á

Average Cell Current (TA = 25°C, Battery Pack Unloaded and without

Current Limit Fault)

ÁÁÁÁ

ÁÁÁ

Á

I

CC

ÁÁÁÁÁÁÁÁÁ

Á

ÁÁÁ

ÁÁ

Á

Operating (VCC = 4.0 V) – 17 20 µA
Sleepmode (VCC = 2.0 V) – 2.0 – nA

Minimum Operating Cell Voltage for Logic and Gate Drivers

ÁÁÁÁ

V

CC

–

1.5

–

ÁÁÁ

V

NOTE: 1.Tested ambient temperature range for the MC33348:

T

low

= –25°CT

high

= +85°C

MC33348

4

MOTOROLA ANALOG IC DEVICE DATA

Battery Pack Sleepmode Range

10

–4

10

–3

10

0

0 1.0 2.0 3.0 5.0

10

–2

10

–1

10

6.0

4.0

12

5.01.00 2.0 3.0

8.0

4.0

0.4

–0.8

–0.4

0

0.8

0

–16

–8.0

8.0

4.0

10

2

10

6.0

12

1.00.80.60.20 0.4

8.0

4.0

10

12

1004020–20–40 0 60 80

9.0

8.0

11

1004020–20–40 0 60 80 1004020–20–40 0 60 80

10

1

123

16

1.2

–1.2

Typical Threshold Change Typical Threshold Change

Maximum Threshold

Charge Limits

VCC = 4.0 V

VCC = 4.15 V

VCC = 3.25 V

VCC = 2.35 V

CO = 10 nF
TA = 25

°

C

CO = 10 nF
Pin 2 = Gnd
RL ≥ 1010

Ω

TA = 25°C

CO = 10 nF
RL

≥

1010

Ω

VCC = 4.15 V

In Regulation

VCC = 2.35 V

Out of Regulation

Battery Pack Operating Range

1 – Battery pack unloaded without

discharge current limit fault.

2 – Battery pack loaded without

discharge current limit fault.

3 – Battery pack loaded or unloaded

with discharge current limit fault.

Figure 1. Charge and Discharge

Threshold Voltage Change versus Temperature

Figure 2. Discharge Current Limit

Threshold Voltage Change versus Temperature

Figure 3. Gate Drive Output Voltage

versus Load Current

Figure 4. Gate Drive Output Voltage

versus Supply Voltage

Figure 5. Charge Pump Output Voltage

versus Temperature

Figure 6. Supply Current

versus Supply Voltage

TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)

V

O

, GATE DRIVE OUTPUT VOLTAGE (V)

IL, OUTPUT LOAD CURRENT (µA) VCC, SUPPLY VOLTAGE (V)

I

CC

, SUPPLY CURRENT ( A)

µ

VCC, SUPPLY VOLTAGE (V)TA, AMBIENT TEMPERATURE (°C)

V

O

, GATE DRIVE OUTPUT VOLTAGE (V)

V

O

, CHARGE PUMP OUTPUT VOLTAGE (V)

∆

V

th(dschg)

, CURRENT LIMIT THRESHOLD

∆

V

th(OV & UV)

, THRESHOLD VOLTAGE CHANGE (%)

VOLTAGE CHANGE (%)

TA = 25°C