Motorola MC33290D, MC33290P Datasheet

8

1

P SUFFIX

PLASTIC PACKAGE

CASE 626

Device

Operating

Temperature Range

Package



SEMICONDUCTOR

TECHNICAL DATA

ISO SERIAL LINK

INTERFACE

ORDERING INFORMATION

MC33290D
MC33290P

TA = –40° to +125°C

SO–8

DIP–8

PIN CONNECTIONS

Order this document by MC33290/D

18

7
6
5

2
3
4

V

BB

N/C

Gnd

Tx

(Top View)

ISO

(K Line I/O)

Rx
V

DD

CEN

D SUFFIX

PLASTIC PACKAGE

CASE 751

(SO–8)

8

1

1

MOTOROLA ANALOG IC DEVICE DATA

 

   

The MC33290 is a serial link bus interface device designed to provide
bi–directional half–duplex communication interfacing in automotive
diagnostic applications. It is designed to interface between the vehicle’s
on–board microcontroller and systems off–board the vehicle via the special
ISO K line. The MC33290 is designed to meet the “Diagnostic Systems
ISO9141” specification. The device’s K line bus driver’s output is fully
protected against bus shorts and over temperature conditions.

The MC33290 derives it’s robustness to temperature and voltage
extremes from being built on a SMARTMOS

process, incorporating CMOS

logic, bipolar/MOS analog circuitry, and DMOS power FETs. Though the
MC33290 was principally designed for automotive applications, it is suited for
other serial communication applications. It is parametrically specified over an
ambient temperature range of –40°C ≤ TA ≤ 125°C and 8.0 V ≤ V

Bat

≤ 18 V
supply. The economical 8 pin DIP and SO–8 surface mount plastic packages
make the MC33290 very cost effective.

• Designed to Operate Over Wide Supply Voltage of 8.0 to 18 V

• Ambient Operating Temperature of –40°C to 125°C

• Interfaces Directly to Standard CMOS Microprocessors

• ISO K Line Pin Protected Against Shorts to Ground

• Thermal Shutdown with Hysteresis

• Maximum Transmission Speeds in Excess of 50 k Baud

• ISO K Line Pin Capable of High Currents

• ISO K Line can be Driven with up to 10 nF of Parasitic Capacitance

• 8.0 kV ESD Protection Attainable with Few Additional Components

• Standby Mode: No V

Bat

Current Drain with VDD at 5.0 V

• Low Current Drain during Operation with V

DD

at 5.0 V

Typical Application Schematic

This device contains 85 active transistors.

Components Necessary for: Reverse Battery (1), Overvoltage Transient (2), and

8.0 kV ESD Protection (3) in a metal module case.

V

CC

D

x

SCIRxD
SCITxD

MCU

V

DD

CEN
Rx

Tx

V

BB

ISO

Gnd

5.0 nF(3)

27 V(3)

1.0 nF

5.0 V

10 nF(3)

500

Ω

(2)

D(1)

45 V(2)

+V

Bat

+V

DD

ISO

K Line

510

Ω

Service Scan Tool

or

End of Production Line

Programming

or

System Checking

On–Board Diagnostic Link

MC33290

TxD

RxD

6
5

7

8

3

4

1

This document contains information on a new product. Specifications and information herein
are subject to change without notice.

 Motorola, Inc. 1997 Rev 0

MC33290

2

MOTOROLA ANALOG IC DEVICE DATA

Figure 1. Simplified Block Diagram

V

BB

CEN
V

DD

Tx

Rx
ISO

Gnd

40 V

Thermal

Shutdown

R

Hys

Master

Bias

6
4

3

1

8
7

5

MAXIMUM RATINGS (All voltages are with respect to ground, unless otherwise noted.)

Rating Symbol Value Unit

VDD DC Supply Voltage

V

DD

–0.3 to 7.0

V

VBB Load Dump Peak Voltage

V

BB(LD)

45

V

ISO Pin Load Dump Peak Voltage

V

ISO

40

V

ISO Short Circuit Current Limit

I

ISO(LIM)

1.0

A

ESD Voltage (Note 1)

V

Human Body Model (Note 2) V

ESD1

2000

Machine Model (Note 3) V

ESD2

200

ISO Clamp Energy (Note 4)

E

clamp

10

mJ

Storage Temperature

T

stg

–55 to +150

°C

Operating Case Temperature

T

C

–40 to +125

°C

Operating Junction Temperature

T

J

–40 to +150

°C

Power Dissipation (TA = 25°C)

P

D

0.8

W

Soldering Temperature (for 10 seconds)

T

solder

260

°C

Thermal Resistance (Junction–to–Ambient)

R

θJA

150

°C/W

NOTES: 1. ESD data available upon request.

2.Testing in accordance with Human Body Model (C

Zap

= 100 pF, R

Zap

= 1500 Ω).

3.Testing in accordance with Machine Model (C

Zap

= 100 pF, R

Zap

= 0Ω).

4.Non–repetitive clamping capability at 25°C.

ELECTRICAL CHARACTERISTICS (Characteristics noted under conditions of 4.75 V ≤ V

DD

≤ 5.25 V, 8.0 V ≤ VBB,

HSIP ≤ 18.0 V, –40°C ≤ TC ≤ 125°C, unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

POWER AND CONTROL

ББББББББББББББББББ

Á

VDD Sleep State Current (HSIM = HSIP, LSIM = LSIP = 0 V,

VRSM = VRSP = 0 V, Tx = 0.8 VDD, CEN = 0.3 VDD)

ÁÁÁÁ

ÁÁÁ

Á

I

DD(SS)

ÁÁ

Á

–

Á

Á

–

ÁÁÁ

Á

0.1

Á

Á

mA

ББББББББББББББББББ

VDD Quiescent Operating Current (HSIM = HSIP – 0.3 V, LSIM = 0 V,

LSIP = 0.3 V, VRSM = 0 V, VRSP = –0.5 V, Tx = 0.2 VDD, CEN = 0.7 VDD)

ÁÁÁÁ

ÁÁÁ

I

DD(Q)

ÁÁ–Á–ÁÁÁ

1.0

Á

mA

ББББББББББББББББББ

Á

VBB Sleep State Current (VBB = 16 V, HSIM = HSIP, LSIM = LSIP = 0 V,

VRSM = VRSP = 0 V, Tx = 0.8 VDD, CEN = 0.3 VDD)

ÁÁÁÁ

ÁÁÁ

Á

I

BB(SS)

ÁÁ

Á

–

Á

Á

–

ÁÁÁ

Á

50

Á

Á

µA

ББББББББББББББББББ

Á

VBB Quiescent Operating Current (HSIM = HSIP – 0.3 V, LSIM = 0 V,

LSIP = 0.3 V, VRSM = 0 V, VRSP = –0.5 V, Tx = 0.2 VDD, CEN = 0.7 VDD)

ÁÁÁÁ

ÁÁÁ

Á

I

BB(Q)

ÁÁ

Á

–

Á

Á

–

ÁÁÁ

Á

1.0

Á

Á

mA

Chip Enable

ÁÁÁÁ

V

Input High Voltage Threshold (Note 1) V

IH(CEN)

0.7 V

DD

– –

Input Low Voltage Threshold (Note 2) V

IL(CEN)

– – 0.3 V

DD

NOTES: 1. When IBB transitions to >100 µA.

2.When IBB transitions to <100 µA.