The MC33253 is a full bridge driver including integrated charge
pump, two independent high and low side driver channels.
The high and low side drivers include a cross conduction suppression
circuit, which, if enabled, prevents the external power FETs from being on
at the same time.
The drive outputs are capable to source and sink 1 A pulse peak
current. The low side channel is referenced to ground, the high side
channel is floating above ground.
A linear regulator provides a maximum of 15.5V to supply the low
side gate driver stages. The high side driver stages are supplied with a
10V charge pump voltage. Such built-in feature, associated to external
capacitor provides a full floating high side drive.
An under- and over-voltage protection prevents erratic system
operation at abnormal supply voltages. Under fault, these functions force
the driver stages into off state.
The logic inputs are compatible with standard CMOS or LSTTL
outputs. The input hysteresis makes the output switching time
independent of the input transition time.
The global enable logic signal can be used to disable the charge
pump and all the bias circuit. The net advantage is the reduction of the
quiescent supply current to under 10µA. To wake up the circuit, 5 V has to
be provided at G_EN. A built-in single supply operational amplifier could
be used to feedback information from the output load to the external
MCU.
Operating Voltage Range from 5.5 V up to 55 V
•V
CC
Operating Voltage Range from 5.5 V up to 28 V
•V
CC2
• Automotive Temperature Range -40°C to 125°C
• 1A Pulse Current Output Driver
• Fast PWM Capability
• Built-In Charge Pump
• Cross Conduction Suppression Circuit
V
CC
C2
OUT
CP_
SRC_
HS
GATE_HS
/IN_HS
IN_HS
/IN_LS
IN_LS
GATE_LS
GND1
OUT
LR_
V
CC2
GND_A
MC33253
55 VOLTS
SEMICONDUCTOR
TECHNICAL DATA
DW SUFFIX
PLASTIC PACKAGE
CASE 751F-05
PIN CONNECTIONS
(TOP VIEW)
CASE 751F-05
1
2
3
4
1
5
1
6
1
7
1
8
1
9
1
10
1
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
IS
OUT
G_EN
/CCS
SRC_HS
HS
GATE_
/IN_HS
IN_HS
2
/IN_LS
2
IN_LS
2
GATE_LS
GND2
IS
-IN
IS
+IN
C1
2
2
2
2
This document contains information on a new product. Specifications and information herein are
subject to change without notice.
Logic “1” Input Voltage (IN_LS & IN_HS)7, 9, 20, 22V
Logic “0” Input Voltage (IN_LS & IN_HS)V
Logic “1” Input Current Vin=5V7, 9, 20, 22I
Logic “0” Input Current Vin=0VI
Logic “0” Input Voltage (/IN_LS & /IN_HS&/CCS)6, 8, 21, 23,
Logic “1” Input Voltage (/IN_LS & /IN_HS&/CCS)V
Logic “0” Input Current Vin=5V6, 8, 21, 23,
Logic “1” Input Current Vin=0VI
Wake Up Input Voltage (G_EN)27V
Wake Up Current (G_EN) VG_EN = 14 V27I
nc...
I
cale Semiconductor,
Frees
LINEAR REGULATOR SECTION
Linear Regulator
V
0mA to 20mA
Linear Regulator
V
V
Charge Pump Output Voltage, referenced to V
Charge Pump Output Voltage, referenced to V
Charge Pump Output Voltage, referenced to V
Charge Pump Output Voltage, referenced to V
Peak current through pin 15under rapid changing
Vcc voltages (see Figure 6)
@ V
LR_OUT
@ V
LR_OUT
@ V
LR_OUT
CHARGE PUMP SECTION
from 16.5 to 28 V, I
CC2
=12 V, I
CC2
=5.5V, I
CC2
I
= 0mA, C
LOAD
I
= 7mA, C
LOAD
= VCC=5.5V
V
CC2
= 0mA, C
I
LOAD
V
= VCC=5.5V
CC2
I
= 7mA, C
LOAD
from
LOAD
= 20mA
LOAD
=TBD, VCC = 5.5V12TBDV
LOAD
CC
CC
CC
CC
Cpout
Cpout
Cpout
Cpout
=1uF
=1uF
=1uF
=1uF
26
26
12V
12V
3V
3V
3V
3V
15I
IH
IL
in+
in-
V
IH
IL
I
in+
in-
G_EN
G_EN
LR_OUT
LR_OUT
CP_OUT
CP_OUT
CP_OUT
CP_OUT
C1
2.010V
0.8V
2001000uA
2001000uA
2.010V
0.8V
TBDTBDuA
TBDTBDuA
4.55.0V
200500uA
13.516.5V
V
-
CC2
1.5
V
LR_OUT
- 2
V
LR_OUT
-3
V
LR_OUT
- TBD
V
LR_OUT-
-TBD
-2.02.0A
CC2
V
V
V
V
V
V
Minimum peak voltage at pin 15under rapid
changing Vcc voltages (see Figure 6)
SUPPLY VOLTAGE SECTION
Quiescent Vcc Supply Current V
Operating Vcc Supply Current
=55V and V
(@V
CC
=12V and V
(@V
CC
Quiescent Vcc2 Supply Current V
CC2
CC2
=28V)
=12V)
MC33253MOTOROLArev3.0 - 4/15
=0V1TBDuA
G_EN
=0V13TBDuA
G_EN
For More Information On This Product,
15V
1
1
min-1.5V
C1
TBD
TBD
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mA
mA
CharacteristicsPin #SymbolMinTypMaxUnit
Operating Vcc2 Supply Current
(@V
=55V and V
CC
=12V and V
(@V
CC
Logic pin inactive (high impedance)
CC2
CC2
=28V)
=12V)
Freescale Semiconductor, Inc.
MC33253
13
13
10
8
mA
Under Voltage Shutdown V
Under Voltage Shutdown V
Over Voltage Shutdown V
Over Voltage Shutdown V
OUTPUT SECTION
Output Sink Resistance (Turned off)
V
GATE_HS
Output Source Resistance (Turned on)
V
CP_OUT
High Side Source Current from Cpout in Switch
On State
nc...
I
Max Voltage (V
INH=1, I
Output Dynamic Range (I
Open Loop Gain (at 25°C) A50dB
Input Bias Current16, 17I
Input Offset Voltage (at 25°C)V
Input Common Mode Voltage RangeICMR05V
Common Mode Rejection RatioCMRR70dB
Sink Capability (Vo>1.1V) (Note 3)28I
Source Capability (Vo<5V) (Note 3)28I
cale Semiconductor,
Gain Bandwidth ProductGBW1.8MHz
Operational Amplifier Output Voltage, I
Operational Amplifier Output Voltage,
Frees
I
source=500uA
Operational Amplifier Slew Rate (+)SR+1V/us
- V
- V
GATE_HS
Smax
SENSE CURRENT AMPLIFIER SECTION (Internal VCC supply @ 12V)
=1V3, 4, 5, 10,
SRC_HS
=0.1V
GATE_HS
=200mA
(Note2)13UV24.65.15.5V
CC2
CC
CC
CC2
- V
SRC_HS)
sink/source
,
= 200µA)28V
sink=500uA
1UV4.65.15.5V
1OV 576164 V
13OV229.53132.5V
R
DS
19, 24, 25
4, 25I
4, 5, 24, 25
28V
28V
R
DS
max200mA
S
OH
V
OL
IB
io
sink
source
CAO
CAO
4.75.0
-5.02.05.0mV
2.03.0mA
2.03.0mA
5V
22.0Ohms
22.0Ohms
18V
300
1.0uA
0.5V
V
mV
Operational Amplifier Slew Rate (-)SR-1V/us
MC33253MOTOROLArev3.0 - 5/15
For More Information On This Product,
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Freescale Semiconductor, Inc.
MC33253
DYNAMIC ELECTRICAL CHARACTERISTICS V
Typical values for TA = 25°C, Min/Max values for TA = -40°C to +125°C, unless otherwise specified.
CharacteristicsPin #SymbolMinTypMaxUnit
Prop. Delay HS and LS, C
Between 50% Input to 50% Output
(see Figure 2)
Turn On Rise Time, C
10% to 90% (NOTE 4) (see Figure 2)
Turn Off Fall Time, C
10% to 90% (NOTE 4) (see Figure 2)
NOTE 2: Between 4.6V and 5.5V, the device has been a non erroneous behaviour.
NOTE 3: Input overdrive 1V
NOTE 4: Rise time is given by time needed to charge the gate from 1V to 10V (Vice versa for fall time)
nc...
I
NOTE : C
N.B.
Pin15 (C1).
corresponds to a capacitor between GATE_HS and SRC_HS for the high side and between GATE_LS and ground for low side.
load
In some applications a large dV/dt at Pin 2 (C2) due to sudden changes at V
Positive transitions at Pin2 (C2) ;mimimum peak current :
Negative transitions at Pin2 (C2); maximum peak current :
max = 2.0A
I
c1
t
max = 600ns (see for peak description)
c1
Current sourced by Pin 15 (C1) during a large dV/dt will result in a negative voltage at Pin 15; negative transitions at Pin2(C2);
minimum peak voltage:
V
min = -1.5V
c1
t
max = 600ns (see for peak description)
c1
cale Semiconductor,
Frees
Figure 2. Limits of C1 Current&Voltage with Large ValuesdV/dt of Vcc
VCC
I
max
c1
I[C1+C2]
0 A
tc1max
V[LR_OUT]
min
t
C1
I
min
c1
V[C1]
0 V
min
V
c1
MC33253MOTOROLArev3.0 - 6/15
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Freescale Semiconductor, Inc.
MC33253
Figure 3. Dynamic Characteristics
/IN_HS
or /IN_LS
50%
IN_HS
or IN_LS
GATE_HS
or GATE_LS
50%
50%
t
pd
10%
t
f
90%
50%
50%
t
pd
90%10%
50%
t
r
Driver Characteristics
nc...
I
Turn-On
For turn-on the current required to charge the gate source capacitor Ciss in the specified time can be calculated as follows:
Peak Current for Rise/Fall Time (tr) and a typical PowerMosFET Gate Charge Qg. IP = Qg/tr = 75 nC/80 ns ª 1.0 A
Turn-Off
The peak current for turn-off can be obtained in the same way as for turn-on. In addition to the dynamic current, required to
turn-off or turn-on the FET, various application related switching scenarios have to be considered:
The output driver sources a peak current of up to 1A for 200 ns to turn on the gate. After 200 ns 100 mA are provided
continuously to maintain the gate charged. The output driver sinks a peak current of up to 1A for 200 ns to turn off the gate. After
200 ns 100 mA are sinked continuously to maintain the gate discharged. In order to withstand high dV/dt spikes a low resistive
path between gate and source is implemented during the off state.
Figure 4. OFF-State Driver Requirement
Flyback Spike charge LS-Gate via C
Charge Current I
trolled Turn-On of Low Side FET
cale Semiconductor,
up to 2.0 A! Uncon-
rss
C
g_hsg_hsg_hs
Frees
C
iss
C
I
rss
V
GATE
g_lsg_lsg_lsg_ls
OFF
rss
rss
V
BAT
Flyback Spike pull down HS-
rss
Drain V
Turn-Off of High Side FET
I
L1
GS
C
LOAD
C
C
OFF
Increase Delayed
rss
iss
rss
Flyback Spike charge LS-Gate via
C
Charge Current I
rss
Delayed Turn-Off of Low Side FET
V
BAT
L1
I
LOAD
OFF
C
rss
C
iss
C
rss
up to 2.0 A!
rss
V
BAT
V
-V
GATE
DRN
L1
Flyback Spike pull down HSDrain V
Turn-On of High Side FET
OFF
g_hs
I
LOAD
Increase Uncontrolled
GS
C
rss
C
iss
C
rss
V
BAT
I
LOAD
L1
C
iss
Driver Requirement: Low
Resistive Gate-Source
Path during OFF-State
Driver Requirement: Low Resistive
Gate Source Path during OFF-State.
High Peak Sink Current Capab.
MC33253MOTOROLArev3.0 - 7/15
C
iss
C
iss
Driver Requirement:
High Peak Sink Current Capab.
For More Information On This Product,
C
iss
Driver Requirement: Low Resistive
Gate-Source Path during OFF-State
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Freescale Semiconductor, Inc.
Driver Supply
The High Side Driver is supplied from the internal charge pump buffered at CP_OUT. The low-drop regulator provides
approx. 3.5 mA (f
7.0 mA for the low side. (Note: The average current required to switch a gate with a frequency of 100kHz is: Average Current
(Charge Pump) for PWM Frq. (f
and one low side at the same time.)
External capacitors on Charge Pump and on Linear Regulator are necessary to supply high peak current absorbed during
switching. The Low Side Driver is supplied from built in low drop regulator.
Gate Protection
The low side gate is protected by the internal linear regulator, which guarantees that V
V
. Especially when working with the charge pump the voltage at POS_HS can be up to 65V. The high side gate is clamped
GS
internally, in order to avoid a V
The Gate protection does not include a Flyback Voltage Clamp that protects the driver and the external FET from a Flyback
voltage that can appear when driving inductive load.This Flyback voltage can reach high negative voltage values and needs to
be clamped externally.
nc...
I
TMOS Failure Protection
All output driver stages are protected against TMOS failure conditions. If one of the external power FETs is destroyed (Gate
, or Gate = Gnd) the function of the remaining output driver stages is not affected. All output drivers are short circuit
= V
CC
protected against short circuits to ground.
Cross Conduction Suppression
The purpose of the cross conduction suppression is to avoid that high and low side FET are turned on at the same time,
cale Semiconductor,
which prevents the half bridge power FETs of a shoot-through condition. The CCS can be disabled / enabled by an external
signal (/CCS).
- /CCS=0, the cross conduction is not allowed.
- /CCS=1, the cross conduction is allowed.
= 50kHz) per gate. In case of the full bridge that means approximately. 14 mA; 7.0 mA for the high side and
PWM
) and ICP = Qg*f
PWM
exceeding 14V.
GS
Figure 5. Gate Protection and Flyback Voltage Clamp
V
gs_ls
IN
Output
Driver
G_LOW
G_LOW
IN
Output
Driver
PWM
MC33253
= 75 nC*100 kHz = 7.5mA. A full bridge application switch only one high side
does not exceed the maximum
GATE_LS
V
gs_hs
V
CC
VGS < 14 V
under all
conditions
Inductive
Flyback Voltage
Clamp
OUT
OUT
GATE_HS
SRC_HS
D
cl
GATE_LS
M
1
L
1
M
2
Frees
MC33253MOTOROLArev3.0 - 8/15
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Figure 6. Input Logic and Cross Conduction Suppression
4.5 V ... V
During Wake-Up the logic is supplied from the G_EN pin.
Low Drop Linear Regulator
cale Semiconductor,
Frees
The low drop linear regulator provides the 5.0 V for the logic section of the driver, the V
charge pump, which generates the V
exceeds 14.5V the output is limited to 14V.
Charge Pump
The charge pump generates the high side driver supply voltage ( V
charge pump without load:
CC2
buffered at LR_OUT and the +13.5 V for the
CP_OUT
gs_ls
. The basic circuit (Fig 7), shows
CP_OUT
. The low drop linear regulator provides 3.5 mA average current per driver stage. If typically V
gs_hs
), buffered at C
gs_hs
Figure 7. Charge Pump Basic Circuit
V
Ccp_out
Vbat
V
LR_OUT
Osc.
Ccp
(2)
D1
A
D2
(1)
CC2
When the oscillator is in low state (1), Ccp is charged through D2 until its voltage reaches V
state (2), C
the MC33253 oscillator is about 330 kHz.
MC33253MOTOROLArev3.0 - 9/15
is discharged though D1 in C
cp
, and final voltage of the charge pump, V
cp_out
cp_out
is V
For More Information On This Product,
. When the oscillator is in high
bat-Vd2
bat+VLR_OUT
- 2Vd. The frequency of
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z
Freescale Semiconductor, Inc.
The Figure 8 represents a simplified circuitry of the high side gate driver.
V
LR-OUT
Tosc2
Tosc1
T1
Figure 8. High Side Gate Driver
Ccp
C1
C2
GATE_HS
MC33253
CP_out
D1
D2
Vcc
(3)
Ccp_out
HS
MOSFET
SRC_HS
20KhZ
100 KhZ
Rg
cp_out
LS
MOSFET
Versus Ccp
21.5
21
20.5
20
19.5
Vcp_out (V)
19
18.5
5 25456585
M
provides peak current to the HS MOSFET
cp_out
20kHz
100kH
Ccp (nF)
T2
nc...
I
pins
The transistors Tosc1 and Tosc2 are the oscillator switching MOSFETs. When Tosc1 is on, the oscillator is at low level. When
Tosc2 is on, the oscillator is at high level. The high side MOSFET predriver is composed of two transistors T1 and T2. When T1 is on
the HS MOSFET is turn on, when T2 is on the HS MOSFET is off. The capacitor C
through T1 during turn on (3) as shown in figure 11.
C
cp
C
choice depends on Power MOSFET characteristics and the working switching frequency. The following diagrams show the
cp
influence of C
(MTP60N06HD and MPT36N06V).
cale Semiconductor,
value on V
cp
average voltage level. The diagrams are given at two different frequencies for two power MOSFETs
cp_out
Figure 9. V
Frees
21
20.5
20
19.5
19
Vcp_out (v)
18.5
18
5 25456585
Ccp ( nF)
MTP60N06HD (Qg=50nC)
Figure 10.
MC33253MOTOROLArev3.0 - 10/15
For More Information On This Product,
MTP36N06V (Qg=40nC)
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Freescale Semiconductor, Inc.
The smaller Ccp value is, the smaller V
increases, the average V
C
cp_out
As shown in figure 11, at high side MOSFET turn on, V
value as following :
C
cp_out
: Power MosFET Gate Charge
Q
g
level decreases. For most of the applications a typical value of 33nF is recommended.
cp_out
cp_out
MC33253
value is. Moreover, for a same C
voltage decreases. This decrease can be calculated according to
cp_out
Q
g
V
=∆
outCcp
_
C
outcp
_
value, when the switching frequency
cp
The following figure is the simplified C
f
: working switching frequency
pwm
Figure 11. Simplified C
Oscillator
V
Cp_out
nc...
I
average V
I
Cp_out
Cp_out
in high
state
cale Semiconductor,
LR_OUT
C
LR_OUT
provides peak current needed by the low side MOSFET turn on. V
C
current and voltage waveforms.
cp_out
Current and Voltage Waveforms
cp_out
Oscillator
in low
state
f=330kHz
Peak
Current
∆
High Side
turn on
outCcpV_
f
PWM
decreasing is as follow:
LR_OUT
Frees
V
outLR
_
Capacitors typical values
In most working cases the following typical values are advised for a good charge pump performing:
=33nF, C
C
cp
These values give a typical 100mV voltage ripple on V
OP-Amp
The built-in A.O.P. available in the MC33253 allows to get a voltage image of the H-bridge current. This voltage can be
provided by a shunt resistor, as shown in figure 13.
Typically shunt resistivity is dimensioned as low as possible (25mOhm/10A). The maximum A.O.P output voltage is 5V.
Therefore a gain of 10 sets the maximum drop voltage on the sensing resistance at 500mV.
MC33253MOTOROLArev3.0 - 11/15
=470nF and C
cp_out
=470nF.
LR_OUT
cp_out
For More Information On This Product,
=∆
C
and V
Q
g
outLR
_
LR_OUT
with Qg=50nC.
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R
A differential mode is advised as shown in fig 12:
nc...
I
Freescale Semiconductor, Inc.
with R2=R4 and R1=R3, )12(
Figure 12. : Differential A.O.P
V
2
V
1
A gain of 10 gives 10
R
3
MC33253
R
4
R
1
IS
+IN
IS
-IN
IS
AOP
out
=
R
2
OUT
2
R
1
R
( a )
V
out
VV
−=
+
_
V
2
R
1
cale Semiconductor,
Frees
To minimize the perturbations, impedance seen by the A.O.P inputs may be as low as possible.
Knowing the maximum output current (2mA), the minimum value of (R1+R2) can be deduced when V
V
RR5,2
)(
with (a) and (b), the minimum values of R1, R2, R3 and R4 can be calculated.
R1=R3=227 Ohms and R2=R4=2.27 kOhms
Over/Under Voltage Shutdown
The under voltage protection becomes active at V
at V
above 28 V. If the O/UV protection is activated the outputs are driven low, in order to switch off the FETs.
CC2
Protection
A protection against double battery and load dump spikes up to 55 V is given by V
polarity is given by the external power FET with the free wheeling diodes, forming a conducting pass from ground to V
additional protection is not provided within the circuit. There is a temperature shut down protection per each half bridge. It protects
the circuitry against temperature damage by blocking the output drives.
CC
5
2
==+
mA
min21
below 5.5 V and the overvoltage protection is activated at VCC above 55 V or
( b )
k
= 55 V. A protection against reverse
CC
maximum is 5V:
OUT
CC
. An
MC33253MOTOROLArev3.0 - 12/15
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Figure 13. DC Motor Control with Microcontroller
MC33253
V
BAT
V
LOGIC
C
CAN
PWM
1
PWM
2
PWM
3
PWM
4
mC
nc...
I
Cp
33nF
HS_1
LS_1
HS_2
LS_2
CURRENT FDB
VCC/V
/G_EN
IN_HS
IN_LS
IN_HS
IN_LS
ISOUT
CC2
/CCS
C
C2
1
1
1
2
2
FULL
BRIDGE
DRIVER
R
2
C
LR_OUT
CP_OUT
GATE_HS
SRC_HS
GATE_LS
GATE_HS
SRC_HS
GATE_LS
GND
IS
+IN
IS
-IN
LRout
1
1
1
2
2
2
470nF
470nF
C
Pout
50ohms
50ohms
50ohms
R
4
M
1
M
3
M
50ohms
M
2
G
S
L
R
3
R
M
G
sense
4
S
L
This application use the internal charge pump to provide the high side floating voltage. This voltage can be provided by an
external source also.
cale Semiconductor,
Frees
R
1
MC33253MOTOROLArev3.0 - 13/15
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PinSymbolPin Description
1V
2C2Charge Pump Capacitor
3CP_OUTCharge Pump Out
4SRC_HS1Source 1 Output High Side
5GATE_HS1Gate 1 Output High Side
6/IN_HS1Neg. Input High Side 1
7IN_HS1Pos. Input High Side 1
8/IN_LS1Neg. Input Low Side 1
9IN_LS1Pos. Input Low Side 1
10GATE_LS1Gate 1 Output Low Side
11GND1Power Ground
12LR_OUTLinear Regulator Output
nc...
I
cale Semiconductor,
13V
14GND_AAnalog Ground (A.O.P)
15C1Charge Pump Capacitor
16IS+Sense OpAmp Pos. Input
17IS-Sense OpAmp Neg. Input
18GND2Logic Ground 2
19GATE_LS2Gate 2 Output Low Side
20IN_LS2Pos. Input Low Side 2
21/IN_LS2Neg. Input Low Side 2
22IN_HS2Pos. Input High Side 2
23/IN_HS2Neg. Input High Side 2
24GATE_HS2Gate 2 Output High Side
25SRC_HS2Source 2 Output High Side
26/CCSEnable Cross Conduction Suppression
27G_ENGlobal Enable
28IS_OUTSense Current OpAmp Output
CC
CC2
MC33253
Supply1
Supply 2
Frees
MC33253MOTOROLArev3.0 - 14/15
For More Information On This Product,
Go to: www.freescale.com
Freescale Semiconductor, Inc.
nc...
I
cale Semiconductor,
Frees
A
28
E
1
B
D
PIN 1 IDENT
e
B
M
0.025B
S
A
C
15
M
M
H
0.25B
14
A
0.10
A1
SEATING
C
S
PLANE
C
NOTES:
1. DIMENSIONS ARE IN MILLIMETERS.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSIONS D AND E DO NOT INCLUDE
MOLD PROTRUSIONS.
4. MAXIMUM MOLD PROTRUSION 0.015 PER
SIDE.
5. DIMENSION B DOES NOT INCLUDE D AMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.13 TOTAL IN
MILLIMETERS
DIM MIN MAX
A
2.352.65
A1
0.130.29
B
0.350.49
C
0.230.32
D
L
θ
17.80 18.05
E
e
H
10.05 10.55
L
θ
7.407.60
1.27 BSC
0.410.90
0 8
°°
CASE 751F-05
ISSUE F
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability
of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation consequential or incidental damages. “Typ ical ” parameters which may be provided in Motorola data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating parameters, including “Typical” must be validated for each customer application by
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use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any application in which the failure of the
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expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or un authorized use, even if
such claim alleges that Motorola was negligent regarding the design or manufacture of the parts. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is
an Equal Employment Opportunity/Affirmative Action Employer.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1,
P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447Minami-Azabu, Minato-ku, Tokyo 106-8573 Japan. 81-3-344-3569
Technical Information Center: 1-800-521-6274 ASIA / PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre,
2, Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
HOME PAGE: http://www.motorola.com/semiconductors
MC33253MOTOROLA
For More Information On This Product,
852-26668334
MC33253/D
Go to: www.freescale.com
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