Motorola MC33199D Datasheet

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The MC33199D is a serial interface circuit used in diagnostic applications. It is the interface between the microcontroller and the special K and L Lines of the ISO diagnostic port. The MC33199D has been designed to meet the “Diagnosis System ISO 9141” specification.
The device has a bi–directional bus K Line driver, fully protected against short circuits and over temperature. It also includes the L Line receiver, used during the wake up sequence in the ISO transmission.
The MC33199 has a unique feature which allows transmission baud rate up to 200 k baud.
Electrically Compatible with Specification “Diagnosis System ISO 9141”
Transmission Speed Up to 200 k Baud
Internal Voltage Reference Generator for Line Comparator Thresholds
TXD, RXD and LO Pins are 5.0 V CMOS Compatible
High Current Capability of DIA Pin (K Line)
Short Circuit Protection for the K Line Input
Over Temperature Shutdown with Hysteresis
Large Operating Range of Driver Supply Voltage
Full Operating Temperature Range
ESD Protected Pins
Order this document by MC33199/D

ISO 9141
SERIAL LINK DRIVER
SEMICONDUCTOR
TECHNICAL DATA
14
1
D SUFFIX
CASE 751A
(SO–14)
REF–OUT
LO
REF–IN–L
REF–IN–K
RXD
TXD
Simplified Application
V
CC
Reference Generator
+
C2
V
CC
C1
+
Thermal
Shutdown
Driver
Current
Limit
This device contains 94 active transistors.
Protection
I1 Source
V
S
L
I1
DIA
Gnd
PIN CONNECTIONS
V
CC
REF–IN–L
REF–IN–K
LO
RXD TXD
NC
114 2 3 4 5 6 7
(Top View)
REF–OUT V
13
L
12
I1
11
Gnd
10
DIA
9
NC
8
S
ORDERING INFORMATION
Operating
Device
MC33199D TA = – 40° to +125°C SO–14
Temperature Range
Package
MOTOROLA ANALOG IC DEVICE DATA
Motorola, Inc. 1996 Rev 0
1
MC33199
MAXIMUM RATINGS
(Note 1)
Rating
Symbol Value Unit
VS Supply Pin
DC Voltage Range
Transient Pulse (Note 2) VCC Supply DC Voltage Range V DIA and L Pins (Note 2)
DC Voltage Range
Transient Pulse (Clamped by Internal Diode)
DC Source Current
DIA Low Level Sink Current
V
pulse
V
S
CC
–0.5 to +40 –2.0 to +40
–0.3 to +6.0 V
–0.5 to +40
–2.0
–50
Int. Limit
TXD DC Voltage Range –0.3 to
V
CC
REF–IN DC Voltage Range
VS < V
CC
VS > V
CC
ESD Voltage Capability (Note 3) V
NOTES: 1. The device is compatible with Specification: “Diagnosis System ISO 9141”.
2.See the test circuit (Figure 23). Transient test pulse according to ISO 76371 and DIN 40839; highest test levels.
3.Human Body Model; C = 100 pF, R = 1500 .
(ESD)
–0.3 to V
–0.3 to V
±2000 V
THERMAL RATINGS
Rating Symbol Value Unit
Storage Temperature T Operating Junction Temperature T Thermal Resistance, Junction–to–Ambient R Maximum Power Dissipation (@ TA = 105°C) P
stg
J
θJA
D
–55 to +150 °C –40 to +150 °C
V
V
V mA mA
V
+ 0.3
V
CC
S
180 °C/W 250 mW
ELECTRICAL CHARACTERISTICS (– 40°C T
125°C, 4.5 V VCC 5.5 V, 4.5 V VS 20 V, unless otherwise
A
noted. Typical values reflect approximate mean at 25°C, nominal VCC and VS, at time of device characterization.)
Characteristic
Symbol Min Typ Max Unit
VCC PIN 1
VCC Supply Voltage Range V VCC Supply Current (Note 1) I
CC
CC
4.5 5.5 V
0.5 1.0 1.5 mA
REF–IN–L PIN 2 AND REF–IN–K PIN 3
REF–IN–L and REF–IN–K Input Voltage Range
For 0 < VS < V For VCC < VS < 40 V
CC
REF–IN–L and REF–IN–K Inputs Currents I
V
inref
VIN
2.0
2.0
– –
VCC – 2.0 V
VS – 1.0 V
–5.0 5.0 µA
LO PIN 4
LO Open Collector Output
Low Level Voltage @ I Low Level Voltage @ I
out out
= 1.0 mA = 4.0 mA
V
OL
– –
0.34 –
0.7
0.8
RXD PIN 5
Pull–Up Resistor to V Low Level Voltage @ I
NOTES: 1. Measured with TXD = VCC, I1 = VS, DIA and L high, no load. REF–IN–L and REF–IN–K connected to REF–OUT .
2.0 < VCC < 5.5 V, 0 < VS < 40 V, 0 < V
3.When an over temperature is detected, the DIA output is forced “off”.
4.0 < VCC < 5.5 V, 0 < VS < 40 V, 0 < VL < 20 V.
5.At static “High” or “Low” level TXD, the current source I1 delivers a current of 3.0 mA (typ). Only during “Low” to “High” transition, does this current increase to a higher value in order to charge the K Line capacitor (CL < 4.0 nF) in a short time (see Figure 3).
6.Measured with TXD = VCC, I1 = VS, DIA and L high, no load, REF–IN–L and REF–IN–K connected to REF–OUT .
CC
= 1.0 mA V
out
< 20 V, TXD high or floating.
DIA
R
RXD
OL
1.5 2.0 2.5 k 0.3 0.7 V
V
V
2
MOTOROLA ANALOG IC DEVICE DATA
MC33199
ELECTRICAL CHARACTERISTICS (continued) (– 40°C T
125°C, 4.5 V VCC 5.5 V, 4.5 V VS 20 V, unless otherwise
A
noted. Typical values reflect approximate mean at 25°C, nominal VCC and VS, at time of device characterization.)
Characteristic UnitMaxTypMinSymbol
TXD PIN 6
High Level Input Voltage V Low Level Input Voltage V
IH
IL
0.7 V
CC
2.8 V
2.0 0.3 V
Input Current @ 0 < VS < 40 V
TXD at High Level TXD at Low Level
I
H
I
L
–200 –600
– –
30
–100
DIA INPUT/OUTPUT PIN 9
Low Level Output Voltage @ I = 30 mA V Drive Current Limit I High Level Input Threshold Voltage
(REF–IN–K Connected to REF–OUT)
Low Level Input Threshold Voltage
(REF–IN–K Connected to REF–OUT) Input Hysteresis V Positive Clamp @ 5.0 mA V Negative Clamp @ – 5.0 mA V Leakage Current (Note 2) I Over T emperature Shutdown (Note 3) T
OL
Lim
V
IH
V
IL
Hyst
Cl+
Cl–
Leak
Lim
0 0.35 0.8 V
40 120 mA
V
min
ref
+ 0.25 V V
min
ref
– 0.2 V
V
ref
+ 0.325 V
V
ref
– 0.125 V
V
ref
+ 0.4 V
V
ref
– 0.05 V
300 450 600 mV
37 40 44 V
–1.5 –0.6 –0.3 V
4.0 10 16 µA
155 °C
L INPUT PIN 12
High Level Input Threshold Voltage
(REF–IN–L Connected to REF–OUT) Low Level Input Threshold Voltage
(REF–IN–L Connected to REF–OUT) Input Hysteresis V Leakage Current (Note 4) I Positive Clamp @ 5.0 mA V Negative Clamp @ – 5.0 mA V
V
IH
V
IL
Hyst
Leak
Cl+
Cl–
V
min
ref
+ 0.25 V V
min
ref
– 0.2 V
V
ref
+ 0.325 V
V
ref
– 0.125 V
V
ref
+ 0.4 V
V
ref
– 0.05 V
300 450 600 mV
4.0 10 16 µA 37 40 44 V
–1.5 –0.6 –0.3 V
I1 PIN 11
Static Source Current I1 Static Saturation Voltage (I1s = – 2.0 mA) V
I1(sat)
Dynamic Source Current (Note 5) I1 Dynamic Saturation Voltage (I
= – 40 mA) V
I1(sat)
I1(dsat)
s
d
–4.0 –3.0 –2.0 mA
VS – 1.2 VS – 0.8 V
–120 –80 –40 mA
VS – 2.7 VS – 0.85 V
VS PIN 13
VS Supply Voltage Range V VS Supply Current (Note 6) I
NOTES: 1. Measured with TXD = VCC, I1 = VS, DIA and L high, no load. REF–IN–L and REF–IN–K connected to REF–OUT .
2.0 < VCC < 5.5 V, 0 < VS < 40 V, 0 < V
3.When an over temperature is detected, the DIA output is forced “off”.
4.0 < VCC < 5.5 V, 0 < VS < 40 V, 0 < VL < 20 V.
5.At static “High” or “Low” level TXD, the current source I1 delivers a current of 3.0 mA (typ). Only during “Low” to “High” transition, does this current increase to a higher value in order to charge the K Line capacitor (CL < 4.0 nF) in a short time (see Figure 3).
6.Measured with TXD = VCC, I1 = VS, DIA and L high, no load, REF–IN–L and REF–IN–K connected to REF–OUT .
< 20 V, TXD high or floating.
DIA
S
S
4.5 20 V
0.5 1.3 2.0 mA
CC
max
max
max
max
S
S
V
µA
V
V
V
V
V
V
MOTOROLA ANALOG IC DEVICE DATA
3
MC33199
ELECTRICAL CHARACTERISTICS (continued)
(– 40°C TA 125°C, 4.5 V VCC 5.5 V, 4.5 V VS 20 V, unless otherwise
noted. Typical values reflect approximate mean at 25°C, nominal VCC and VS, at time of device characterization.)
Characteristic UnitMaxTypMinSymbol
REF–OUT PIN 14
Output Voltage
3.0 < VS < 5.6 V and IRO = ±10 µA
5.6 < VS < 18 V and IRO = ±10 µA 18 < VS < 40 V and IRO = ±10 µA
Maximum Output Current I Pull–Up Resistor to V
NOTES: 1. Measured with TXD = VCC, I1 = VS, DIA and L high, no load. REF–IN–L and REF–IN–K connected to REF–OUT .
2.0 < VCC < 5.5 V, 0 < VS < 40 V, 0 < V
3.When an over temperature is detected, the DIA output is forced “off”.
4.0 < VCC < 5.5 V, 0 < VS < 40 V, 0 < VL < 20 V.
5.At static “High” or “Low” level TXD, the current source I1 delivers a current of 3.0 mA (typ). Only during “Low” to “High” transition, does this current increase to a higher value in order to charge the K Line capacitor (CL < 4.0 nF) in a short time (see Figure 3).
6.Measured with TXD = VCC, I1 = VS, DIA and L high, no load, REF–IN–L and REF–IN–K connected to REF–OUT .
DYNAMIC CHARACTERISTICS (– 40°C T
CC
< 20 V, TXD high or floating.
DIA
125°C, 4.5 V VCC 5.5 V, 4.5 V VS 20 V, unless otherwise noted.)
A
V
ref
out
R
PU
2.7
0.5 x V
8.5
S
– – –
3.3
0.56 x V
10.8
S
–50 50 µA
3.0 8.0 12 k
Characteristic Symbol Min Typ Max Unit
Transmission Speed 1/t Bit 0 200 k Baud High or Low Bit Time t Bit 5.0 µs RXD Output
Low to High Transition Delay Time High to Low Transition Delay Time
t
RDR
t
RDF
– –
– –
450 450
LO Output
Low to High Transition Delay Time High to Low Transition Delay Time
t
LDR
t
LDF
– –
– –
2.0
2.0
DIA Output
Low to High Transition Delay Time High to Low Transition Delay Time
t
DDR
t
DDF
– –
– –
650 650
I1 Output (VS – I1 > 2.7 V)
Rise Time Hold Time
t
I1R
t
I1F
1.5
– –
0.3
4.5
V
ns
µs
ns
µs
4
MOTOROLA ANALOG IC DEVICE DATA
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