Motorola MC141537T1, MCC141537 Datasheet

MCM64PE32MCM64PE64
1
MOTOROLA FAST SRAM
Advance Information
256K/512K Pipelined BurstRAM Secondary Cache Module for Pentium
The MCM64PE32 (256K) and MCM64PE64 (512K) are designed to provide a burstable, high performance, L2 cache for the Pentium microprocessor in conjunction with Intel’s Triton II chip set. The MCM64PE32 is configured as 32K x 64 bits and the MCM64PE64 is configured as 64K x 64 bits. Both are packaged in a 160 pin card edge memory module. The MCM64PE32 module uses Motorola’s 3.3 V 32K x 32 BurstRAMs and one Motorola 5 V 32K x 8 FSRAM for the tag RAM. The MCM64PE64 module uses Motorola’s 3.3 V 64K x 32 BurstRAMs and one Motorola 5 V 32K x 8 FSRAM for the tag RAM.
Bursts can be initiated with either address status processor (ADSP
) or cache
address status (CADS
). Subsequent burst addresses are generated internal to
the BurstRAM by the cache burst advance (CADV
) input pin.
Write cycles are internally self timed and are initiated by the rising edge of the clock (CLK0) input. Eight write enables are provided for byte write control.
PD0 – PD3 map into the Triton II chip set for auto–configuration of the cache control.
Pentium–Style Burst Counter on Chip
Pipelined Data Out
160 Pin Card Edge Module
Address Pipeline Supported by ADSP
Disabled with Ex
All Cache Data and Tag I/Os are TTL Compatible
Three State Outputs
Byte Write Capability
Fast Module Clock Rate: 66 MHz
Fast SRAM Access Times:15 ns for Tag RAM
8 ns for Data RAMs
One–Cycle Deselect Data RAMs
Decoupling Capacitors for Each Fast Static RAM
High Quality Multi–Layer FR4 PWB with Separate Power and Ground
Planes
8 Bits Tag RAM
Dual Power Supplies: 3.3 V + 10%, – 5%
5 V ± 10%
Burndy Connector, Part Number: CELP2X80SC3Z48
Intel COAST 3.0 Option III Compliant
Burst Order Select (BOSEL) Option
BurstRAM is a trademark of Motorola. Mfax is a trademark of Motorola. Pentium is a trademark of Intel Corp.
This document contains information on a new product. Motorola reserves the right to change or discontinue this product without notice.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MCM64PE32/D
MCM64PE32 MCM64PE64
160–LEAD CARD EDGE
CASE TBD
TOP VIEW
80
43
42
1
12/9/96
Motorola, Inc. 1996
MCM64PE32MCM64PE64 2
MOTOROLA FAST SRAM
MCM64PE32 BLOCK DIAGRAM
BWE
CADV
ADSP CADS
CLK0
CG
SE1
32K x 32
ADV
K G
SW
SE2
LBO
ADSP ADSC
DQ0 – DQ31
ZZ
V
DD
CCS
V
DD
SA0 – SA14
TIO0 – TIO7
TWE
15
13
A3 – A17
GWE
SGW
CWE0 – CWE3
SBa – SBd
SE3
ECS2 ECS1
4.7 k
DQ0 – DQ31
SE1
32K x 32
ADV
K G
SW
SE2
LBO
ADSP ADSC
DQ0 – DQ31
ZZ
SA0 – SA14
15
SGW SBa – SBd
SE3
DQ32 – DQ63
CWE4 – CWE7
A0 – A12
DQ0 – DQ7
A13
W
A14 G
32K x 8
E
BOSEL
A5 – A17
MCM64PE32MCM64PE64
3
MOTOROLA FAST SRAM
MCM64PE64 BLOCK DIAGRAM
BWE
CADV
ADSP CADS
CLK0
CG
SE1
64K x 32
ADV
K G
SW
SE2
LBO
ADSP ADSC
DQ0 – DQ31
ZZ
V
DD
CCS
SA0 – SA15
TIO0 – TIO7
TWE
16
14
A3 – A18
GWE
SGW
CWE0 – CWE3
SBa – SBd
SE3
4.7 k
DQ0 – DQ31
SE1
64K x 32
ADV
K G
SW
SE2
LBO
ADSP ADSC
DQ0 – DQ31
ZZ
SA0 – SA15
15
SGW SBa – SBd
SE3
DQ32 – DQ63
CWE4 – CWE7
A0 – A13
DQ0 – DQ7 W
A14 G
32K x 32
E
16
V
DD
BOSEL
A5 – A18
PIN ASSIGNMENT
160–LEAD CARD EDGE MODULE
TOP VIEW
CWE3
NC NC
V
SS
RSVD
A4 A6 A8
A10
VCC5
A17
V
SS
A9 A14 A15
RSVD
PD0 PD2
BOSEL
V
SS
CLK0
V
SS
DQ63 VCC5 DQ61 DQ59 DQ57
81 82 83 84 85 86 87 88 89 90
8 9
10
CWE4 CWE6 CWE0 CWE2 VDD3 CCS GWE BWE V
SS
A3 A7 A5 A11 A16 VDD3 A18 V
SS
A12 A13 ADSP ECS1 ECS2 PD1 PD3 V
SS
NC V
SS
DQ62 VDD3 DQ60 DQ58 DQ56
43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80
123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160
V
SS
DQ55 DQ53 DQ51 DQ49
V
SS
DQ47 DQ45 DQ43 VCC5 DQ41 DQ39 DQ37
V
SS
DQ35 DQ33 DQ31 VCC5 DQ29 DQ27 DQ25
V
SS
DQ23 DQ21 DQ19 VCC5 DQ17 DQ15 DQ13
V
SS
DQ11
DQ9 DQ7
VCC5
DQ5 DQ3 DQ1 V
SS
V
SS
DQ54 DQ52 DQ50 DQ48 V
SS
DQ46 DQ44 DQ42 VDD3 DQ40 DQ38 DQ36 V
SS
DQ34 DQ32 DQ30 V
DD
DQ28 DQ26 DQ24 V
SS
DQ22 DQ20 DQ18 VDD3 DQ16 DQ14 DQ12 V
SS
DQ10 DQ8 DQ6 VDD3 DQ4 DQ2 DQ0 V
SS
V
SS
TIO0 TIO2 TIO6 TIO4 NC VDD3
TWE CADS V
SS
1 2 3 4 5 6 7
11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42
96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122
V
SS
TIO1 TIO7 TIO5 TIO3
NC
VCC5
NC
CADV
V
SS
CG CWE5 CWE7 CWE1
VCC5
91 92 93 94 95
MCM64PE32MCM64PE64 4
MOTOROLA FAST SRAM
PRESENCE DETECT TABLE
Cache Size and
Functionality
PD0 PD1 PD2 PD3
256K Pipe Burst NC NC V
SS
NC
512K Pipe Burst NC NC NC V
SS
MCM64PE32MCM64PE64
5
MOTOROLA FAST SRAM
PIN DESCRIPTIONS
160–Lead Card Edge Pin Locations Symbol
Type Description
20, 21, 22, 23, 24, 26, 28, 29,
101, 102, 103, 104, 106, 108, 109, 110
A3 – A18 Input Address Inputs: These inputs are registered into data RAMs and must
meet setup and hold times. The tag RAM addresses are not registered.
30 ADSP Input Address Status Processor: Initiates READ, WRITE, or chip deselect
cycle (Exception — chip deselect does not occur when ADSP
is
asserted and CCS
is high.
114 BOSEL Input Burst Order Select: NC for interleaved burst counter. Tie to ground for
linear burst counter.
18 BWE Input Byte Write Enable: To be used in future modules.
9 CADS Input Cache Address Status: Initiates READ, WRITE, or chip deselect cycle.
89 CADV Input Cache Burst Advance: Increments address count in accordance with
interleaved count style. 16 CCS Input Chip Select: Active low chip enable for data RAMs. 91 CG Input Cache Output Enable: Active low asynchronous input.
Low — enables output buffers (DQ pins)
High — DQx pins are high impedance.
116 CLK0 Input Clock: This signal registers the address, data in, and all control signals
except CG
.
11, 12, 13, 14, 92, 93, 94, 96 CWE0 –
CWE7
Input Cache Data Byte Write Enable: Active low write signal for data RAMs.
38, 40, 41, 42, 44, 45, 46, 47, 49, 50, 51, 53, 54, 55, 57, 58, 59, 61, 62, 63, 65, 66,
67, 69, 70, 71, 73, 74, 75, 77, 78, 79, 118, 120, 121, 122, 124, 125, 126, 127, 129, 130, 131, 133, 134, 135, 137, 138, 139, 141, 142, 143, 145, 146, 147, 149,
150, 151, 153, 154, 155, 157, 158, 159
DQ0 –
DQ63
I/O Synchronous Data I/O:
Drives data out of data RAMs during READ cycles. Stores data to data RAMs during WRITE cycles.
31, 32 ECS1,
ECS2
Input Expansion Chip Select.
17 GWE Input Global Write Enable: To be used in future modules.
33, 34, 112, 113 PD0 –
PD3
Presence Detect: See Presence Detect Table.
100, 111 RSVD No Connection: Reserved for future use.
2, 3, 4, 5, 82, 83, 84, 85 TIO0 –
TIO7
I/O Tag RAM I/O:
Drives data out during tag compare cycles. Stores data to tag RAM during tag WRITE cycles.
8 TWE Input Tag W rite Enable: Active low write signal for tag RAMs.
87, 95, 105, 119, 132, 140, 148, 156 VCC5 Supply Power Supply: 5.0 V ± 5%.
7, 15, 25, 39, 52, 60, 68, 76 VDD3 Supply Power Supply: 3.3 V + 10%, – 5%.
1, 10, 19, 27, 35, 37, 43, 48, 56, 64, 72, 80, 81, 90, 99, 107, 115, 117, 123, 128,
136, 144, 152, 160
V
SS
Supply Ground.
6, 36, 86, 88, 97, 98 NC No Connection: There is no connection to the module.
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