MCM64PE32•MCM64PE64
5
MOTOROLA FAST SRAM
PIN DESCRIPTIONS
160–Lead Card Edge Pin Locations Symbol
Type Description
20, 21, 22, 23, 24, 26, 28, 29,
101, 102, 103, 104, 106, 108, 109, 110
A3 – A18 Input Address Inputs: These inputs are registered into data RAMs and must
meet setup and hold times. The tag RAM addresses are not registered.
30 ADSP Input Address Status Processor: Initiates READ, WRITE, or chip deselect
cycle (Exception — chip deselect does not occur when ADSP
is
asserted and CCS
is high.
114 BOSEL Input Burst Order Select: NC for interleaved burst counter. Tie to ground for
linear burst counter.
18 BWE Input Byte Write Enable: To be used in future modules.
9 CADS Input Cache Address Status: Initiates READ, WRITE, or chip deselect cycle.
89 CADV Input Cache Burst Advance: Increments address count in accordance with
interleaved count style.
16 CCS Input Chip Select: Active low chip enable for data RAMs.
91 CG Input Cache Output Enable: Active low asynchronous input.
Low — enables output buffers (DQ pins)
High — DQx pins are high impedance.
116 CLK0 Input Clock: This signal registers the address, data in, and all control signals
except CG
.
11, 12, 13, 14, 92, 93, 94, 96 CWE0 –
CWE7
Input Cache Data Byte Write Enable: Active low write signal for data RAMs.
38, 40, 41, 42, 44, 45, 46, 47, 49, 50, 51,
53, 54, 55, 57, 58, 59, 61, 62, 63, 65, 66,
67, 69, 70, 71, 73, 74, 75, 77, 78, 79,
118, 120, 121, 122, 124, 125, 126, 127,
129, 130, 131, 133, 134, 135, 137, 138,
139, 141, 142, 143, 145, 146, 147, 149,
150, 151, 153, 154, 155, 157, 158, 159
DQ0 –
DQ63
I/O Synchronous Data I/O:
Drives data out of data RAMs during READ cycles.
Stores data to data RAMs during WRITE cycles.
31, 32 ECS1,
ECS2
Input Expansion Chip Select.
17 GWE Input Global Write Enable: To be used in future modules.
33, 34, 112, 113 PD0 –
PD3
— Presence Detect: See Presence Detect Table.
100, 111 RSVD — No Connection: Reserved for future use.
2, 3, 4, 5, 82, 83, 84, 85 TIO0 –
TIO7
I/O Tag RAM I/O:
Drives data out during tag compare cycles.
Stores data to tag RAM during tag WRITE cycles.
8 TWE Input Tag W rite Enable: Active low write signal for tag RAMs.
87, 95, 105, 119, 132, 140, 148, 156 VCC5 Supply Power Supply: 5.0 V ± 5%.
7, 15, 25, 39, 52, 60, 68, 76 VDD3 Supply Power Supply: 3.3 V + 10%, – 5%.
1, 10, 19, 27, 35, 37, 43, 48, 56, 64, 72,
80, 81, 90, 99, 107, 115, 117, 123, 128,
136, 144, 152, 160
V
SS
Supply Ground.
6, 36, 86, 88, 97, 98 NC — No Connection: There is no connection to the module.