MOTOROLA CMOS LOGIC DATA
57
MC14015B
The MC14015B dual 4–bit static shift register is constructed with MOS
P–channel and N–channel enhancement mode d evices in a single
monolithic structure. It consists of two identical, independent 4–state
serial–input/parallel–output registers. Each register has independent Clock
and Reset inputs with a single serial Data input. The register states are type
D master–slave flip–flops. Data is shifted from one stage to the next during
the positive–going clock transition. Each register can be cleared when a high
level is applied on the Reset line. These complementary MOS shift registers
find primary use in buffer storage and serial–to–parallel conversion where
low power dissipation and/or noise immunity is desired.
• Diode Protection on All Inputs
• Supply Voltage Range = 3.0 Vdc to 18 Vdc
• Logic Edge–Clocked Flip–Flop Design —
Logic state is retained indefinitely with clock level either high or low;
information is transferred to the output only on the positive going edge
of the clock pulse.
• Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range.
MAXIMUM RATINGS* (Voltages Referenced to V
SS
)
Input or Output Voltage (DC or Transient)
Input or Output Current (DC or Transient),
per Pin
Power Dissipation, per Package†
Lead Temperature (8–Second Soldering)
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
†Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C
Ceramic “L” Packages: – 12 mW/_C From 100_C To 125_C
TRUTH TABLE
C D R Q0 Q
n
0 0 0 Q
n–1
1 0 1 Q
n–1
X 0 No Change No Change
X X 1 0 0
X = Don’t Care
Qn = Q0, Q1, Q2, or Q3, as applicable.
Q
n–1
= Output of prior stage.
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
REV 3
1/94
L SUFFIX
CERAMIC
CASE 620
ORDERING INFORMATION
MC14XXXBCP Plastic
MC14XXXBCL Ceramic
MC14XXXBD SOIC
TA = – 55° to 125°C for all packages.
P SUFFIX
PLASTIC
CASE 648
D SUFFIX
SOIC
CASE 751B
BLOCK DIAGRAM
14
1
15
6
9
7
5
4
3
10
13
12
11
2
Q0
Q1
Q2
Q3
Q0
Q1
Q2
Q3
D
C
R
R
D
C
VDD = PIN 16
VSS = PIN 8
MOTOROLA CMOS LOGIC DATAMC14015B
58
ELECTRICAL CHARACTERISTICS (Voltages Referenced to V
SS
)
Input Voltage “0” Level
(VO = 4.5 or .05 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
(VO = 0.5 or 4.5 Vdc) “1” Level
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
– 4.2
– 0.88
– 2.25
– 8.8
Input Capacitance
(Vin = 0)
Quiescent Current
(Per Package)
Total Supply Current**†
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs, all
buffers switching)
IT = (1.2 µA/kHz)f + I
DD
IT = (2.4 µA/kHz)f + I
DD
IT = (3.6 µA/kHz)f + I
DD
µAdc
#Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
**The formulas given are for the typical characteristics only at 25_C.
†To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.002.
This device contains protection circuitry to guard against damage
due to high static voltages or electric fields. However, precautions must
be taken to avoid applications of any voltage higher than maximum rated
voltages to this high-impedance circuit. For proper operation, Vin and
V
out
should be constrained to the range VSS ≤ (Vin or V
out
) ≤ VDD.
Unused inputs must always be tied to an appropriate logic voltage
level (e.g., either VSS or VDD). Unused outputs must be left open.
PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
Q1
B
Q0
B
R
B
D
B
V
DD
C
A
Q3
A
Q2
B
Q1
A
Q2
A
Q3
B
C
B
V
SS
D
A
R
A
Q0
A
Output Voltage
Vin = 0 or V
DD
Output Drive Current
(VOH = 2.5 Vdc) Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
(VOL = 0.4 Vdc) Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
MOTOROLA CMOS LOGIC DATA
59
MC14015B
SWITCHING CHARACTERISTICS* (C
L
= 50 pF, TA = 25_C)
Output Rise and Fall Time
t
TLH
, t
THL
= (1.5 ns/pF) CL + 25 ns
t
TLH
, t
THL
= (0.75 ns/pF) CL + 12.5 ns
t
TLH
, t
THL
= (0.55 ns/pF) CL + 9.5 ns
Propagation Delay Time
Clock, Data to Q
t
PLH
, t
PHL
= (1.7 ns/pF) CL + 225 ns
t
PLH
, t
PHL
= (0.66 ns/pF) CL + 92 ns
t
PLH
, t
PHL
= (0.5 ns/pF) CL + 65 ns
Reset to Q
t
PLH
, t
PHL
= (1.7 ns/pF) CL + 375 ns
t
PLH
, t
PHL
= (0.66 ns/pF) CL + 147 ns
t
PLH
, t
PHL
= (0.5 ns/pF) CL + 95 ns
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Clock Pulse Rise and Fall Times
ns
*The formulas given are for typical characteristics only at 25_C.
#Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
Figure 1. Power Dissipation Test Circuit and Waveform
PULSE
GENERATOR
2
CLOCK
DATA
50%
1
f
PULSE
GENERATOR
1
500
µ
F
V
DD
I
D
0.01 µF
CERAMIC
C
L
Q0
Q1
Q2
Q3
D
C
R
V
SS
C
L
C
L
C
L
V
DD