MC100EPT22
Dual LVTTL/LVCMOS to
Differential LVPECL Translator
The MC100EPT22 is a dual LVTTL/LVCMOS to differential
LVPECL translator. Because LVPECL (Positive ECL) levels are used
only +3.3V and ground are required. The small outline 8–lead SOIC
package and the single gate of the EPT22 makes it ideal for those
applications where space, performance, and low power are at a
premium. Because the mature MOSAIC 5 process is used, low cost
and high speed can be added to the list of features.
• 420ps T ypical Propagation Delay
• Differential LVPECL Outputs
• Small Outline SOIC Package
• PNP LVTTL Inputs for Minimal Loading
• Flow Through Pinouts
• Q Output will default HIGH with inputs open
• ESD Protection: 4.0 KV HBM, 200 V MM
• Maximum Frequency > 1.1 GHz
• Moisture Sensitivity Level 1, Indefinite Time Out of Drypack.
For Additional Information, See Application Note AND8003/D
• Flammability Rating: UL–94 code V–0 @ 1/8”,
Oxygen Index 28 to 34
• Transistor Count = 164 devices
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1
SO–8
D SUFFIX
CASE 751
MARKING DIAGRAM
8
KPT22
ALYW
1
*For additional information, see Application Note
AND8002/D
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
Q0
Q0
1
2
V
78D0
CC
LVPECL LVTTL
3
45
Q1
Figure 1. 8–Lead Pinout (Top View) and Logic Diagram
6
D1Q1
GND
PIN DESCRIPTION
PIN
Q0, Q1, Q0
MC100EPT22D SOIC 98 Units/Rail
MC100EPT22DR2 SOIC 2500 Tape & Reel
, Q1
D0, D1 LVTTL Inputs
V
CC
GND Ground
ORDERING INFORMATION
Device Package Shipping
FUNCTION
Diff. LVPECL Outputs
Positive Supply
Semiconductor Components Industries, LLC, 1999
September, 1999 – Rev. 2.0
1 Publication Order Number:
MC100EPT22/D
MC100EPT22
MAXIMUM RATINGS*
Symbol Parameter Value Unit
V
CC
V
I
I
out
T
A
T
stg
θ
JA
θ
JC
T
sol
* Maximum Ratings are those values beyond which damage to the device may occur.
LVTTL INPUT DC CHARACTERISTICS (VCC = 3.3V ±0.3V; GND = 0V; TA = –40°C to +85°C)
Symbol Characteristic Min Typ Max Unit
I
IH
I
IHH
I
IL
V
V
V
IK
IH
IL
Input HIGH Current (Vin = 2.7V) 20 µA
Input HIGH Current MAX (Vin = 6.0V) 100 µA
Input LOW Current (Vin = 0.5V) –0.6 mA
Input Clamp Voltage (Iin = –18mA) –1.0 V
Input HIGH Voltage 2.0 V
Input LOW Voltage 0.8 V
Power Supply 6.0 to 0 VDC
Input Voltage (VI not more positive than VCC) 6.0 to 0 VDC
Output Current Continuous
Surge
Operating Temperature Range –40 to +85 °C
Storage Temperature –65 to +150 °C
Thermal Resistance (Junction–to–Ambient) Still Air
500lfpm
Thermal Resistance (Junction–to–Case) 41 to 44 ± 5% °C/W
Solder Temperature (<2 to 3 Seconds: 245°C desired) 265 °C
50
100
190
130
mA
°C/W
LVPECL OUTPUT DC CHARACTERISTICS (VCC = 3.3V ± 0.3V, GND = 0V) (Note 3.)
–40°C 25°C 85°C
Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit
ICC
V
OH
V
OL
NOTE: 100EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
1. VCC = 3.3V, GND = 0V, all other pins floating.
2. All loading with 50 ohms to VCC–2.0 volts.
3. Output parameters vary 1:1 with VCC.
Power Supply Current HIGH
(Note 1.)
Output HIGH Voltage
(Note 2.)
Output LOW Voltage
(Note 2.)
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500lfpm is maintained.
32 43 55 35 45 60 37 46 62 mA
2100 2240 2400 2100 2280 2400 2100 2350 2400 mV
1350 1490 1600 1350 1555 1600 1350 1550 1600 mV
AC CHARACTERISTICS (VCC = 3.3V ± 0.3V; GND = 0V)
–40°C 25°C 85°C
Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit
f
max
t
PLH
t
PHL
t
JITTER
tr &
t
f
4. F
Maximum Toggle
Frequency (Note 4.)
,
Propagation Delay to
Output Differential
Cycle–to–Cycle Jitter TBD TBD TBD ps
Output Rise/Fall Times
(20% – 80%) Q, Q
guaranteed for functionality only. VOL and VOH levels are guaranteed at DC only.
max
0.8 1.1 0.8 1.1 0.8 1.1 GHz
250 400 650 250 420 675 300 500 700 ps
50 110 200 60 120 220 70 140 250 ps
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