MOTOROLA CUD42D Technical data

MOTOROLABUD42D/D

SEMICONDUCTOR TECHNICAL DATA

Order this document by BUD42D/D

Designer's Data Sheet

High Speed, High Gain Bipolar

NPN Transistor Integrating an

Antisaturation Network and a

Transient Voltage Suppression

Capability

The BUD42D is a state±of±the±art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally suited to light ballast applications.

Main features:

•Free Wheeling Diode built in

•Flat DC Current Gain

•Fast Switching Times and Tight Distribution

•ª6 Sigmaº Process Providing Tight and Reproducible Parameter Spreads

Two versions:

•BUD42D±1: Case 369±07 for Insertion Mode

•BUD42D: Case 369A±13 for Surface Mount Mode

MAXIMUM RATINGS

Parameters	Symbol	Value	Unit
Collector±Emitter Sustaining Voltage	VCEO	350	Vdc
Collector±Base Breakdown Voltage	VCBO	650	Vdc
Collector±Emitter Breakdown Voltage	VCES	650	Vdc
Emitter±Base Voltage	VEBO	9	Vdc
Collector Current Ð Continuous	IC	4	Adc
Ð Peak (1)	ICM	8
Base Current Ð Continuous	IB	1	Adc
Base Current Ð Peak (1)	IBM	2
*Total Device Dissipation @ TC = 25_C	PD	25	Watt
*Derate above 25°C		0.2	W/_C
Operating and Storage Temperature	TJ, Tstg	± 65 to +150	_C

TYPICAL GAIN

Typical Gain @IC = 1 A, VCE = 2 V	hFE	13	Ð
Typical Gain @IC = 0.3 A, VCE = 1 V	hFE	16	Ð

THERMAL CHARACTERISTICS

Thermal Resistance Ð Junction to Case	RqJC	5	_C/W
Ð Junction to Ambient	RqJA	71.4
Maximum Lead Temperature for Soldering	TL	260	_C
Purposes: 1/8″ from case for 5 seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

Designer's is a trademark of Motorola, Inc.

BUD42D

POWER TRANSISTORS

4 AMPERES

650 VOLTS

25 WATTS

CASE 369±07

CASE 369A±13

MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS

6.7
0.265
	6.7	0.265″
	1.8	.070″
	30	0.118
1.6		1.6
0.063	0.063
2.3	2.3
0.090	0.090

Designer's Data for ªWorst Caseº Conditions Ð The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Motorola, Inc. 1998	1
Motorola Bipolar Power Transistor Device Data

BUD42D

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector±Emitter Sustaining Voltage

VCEO(sus)

Vdc

(IC = 100 mA, L = 25 mH)

350

430

Collector±Base Breakdown Voltage

VCBO

Vdc

(ICBO = 1 mA)

650

780

Emitter±Base Breakdown Voltage

VEBO

Vdc

(IEBO = 1 mA)

9

12

Collector Cutoff Current

@ TC = 25°C

ICEO

100

μAdc

(VCE = Rated VCEO, IB = 0)

@ TC = 125°C

200

Collector Cutoff Current

@ TC = 25°C

ICES

10

μAdc

(VCE = Rated VCES, VEB = 0)

@ TC = 125°C

200

Emitter±Cutoff Current

IEBO

μAdc

(VEB = 9 Vdc, IC = 0)

100

ON CHARACTERISTICS

Base±Emitter Saturation Voltage

VBE(sat)

0.85

1.2

Vdc

(IC = 1 Adc, IB = 0.2 Adc)

Collector±Emitter Saturation Voltage

VCE(sat)

0.2

1

Vdc

(IC = 2 Adc, IB = 0.5 Adc)

DC Current Gain

hFE

Ð

(IC = 1 Adc, VCE = 2 Vdc)

8

13

(IC = 2 Adc, VCE = 5 Vdc)

10

12

DIODE CHARACTERISTICS

Forward Diode Voltage

VEC

V

(IEC = 1.0 Adc)

0.9

1.5

SWITCHING CHARACTERISTICS: Resistive Load (D.C.≤ 10%, Pulse Width = 40 μs)

Turn±Off Time

Toff

μs

(IC = 1.2 Adc, IB1 = 0.4 A, IB2 = 0.1 A, VCC = 300 V)

4.6

6.55

Fall Time

Tf

μs

(IC = 2.5 Adc, IB1 = IB2 = 0.5 A, VCC = 150 V, VBE = ±2 V)

0.8

DYNAMIC SATURATION VOLTAGE

I

= 400 mA

@ 1 μs

@ TC = 25°C

VCE(dsat)

2.8

V

°

3.2

C

@ TC = 125 C

Dynamic Saturation

IB1 = 40 mA

@ 3 μs

@ TC = 25°C

0.75

Voltage:

VCC = 300 V

μ

@ TC = 125°C

1.3

Determined 1 s and

3 μs respectively after

@ 1 μs

@ TC = 25°C

2.1

rising IB1 reaches

I

= 1 A

C

°

4.7

90% of final IB1

@ TC = 125 C

I

= 200 mA

B1

@ 3 μs

@ TC = 25°C

0.35

V

= 300 V

CC

@ TC = 125°C

0.6

2	Motorola Bipolar Power Transistor Device Data

BUD42D

TYPICAL STATIC CHARACTERISTICS

	100
GAIN		TJ = 125°C
CURRENT		TJ = 25°C
	10	TJ	= ± 20°C
, DC
FE
h
	1	0.001	0.01	0.1	1	10

IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain @ VCE = 1 V

	3
(VOLTS)					TJ = 25°C
	2			2 A
VOLTAGE
			1 A	1.5 A
,	1
CE
V
		IC = 0.2 A	0.4 A
	0			1
	0.001	0.01	0.1		10

IB, BASE CURRENT (AMPS)

Figure 3. Collector Saturation Region

	100
		IC/IB = 8
(VOLTS)	10
				TJ = 125°C
, VOLTAGE	1			TJ = ± 20°C
					TJ = 25°C
CE
V	0.1
	0.01			1
	0.001	0.01	0.1		10
		IC, COLLECTOR CURRENT (AMPS)

Figure 5. Collector±Emitter Saturation Voltage

	100
GAIN	TJ = 125°C
CURRENT	TJ = 25°C
	10
	TJ = ± 20°C
, DC
FE
h
	1
	0.001	0.01	0.1	1	10

IC, COLLECTOR CURRENT (AMPS)

		Figure 2. DC Current Gain @ VCE = 5 V
	10
	IC/IB = 5
VOLTAGE (VOLTS)	1
				TJ = 125°C	TJ = 25°C
,	0.1
CE
V				TJ = ± 20°C
	0.01
	0.001	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 4. Collector±Emitter Saturation Voltage

	10
		IC/IB = 10		TJ = ± 20°C
,VOLTAGE (VOLTS)	1			TJ = 125°C	TJ = 25°C
	0.1
CE
V
	0.01			1
	0.001	0.01	0.1		10
		IC, COLLECTOR CURRENT (AMPS)

Figure 6. Collector±Emitter Saturation Voltage

Motorola Bipolar Power Transistor Device Data

3