MOTOROLA CUD42D Technical data

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查询BUD42D/D供应商

SEMICONDUCTOR TECHNICAL DATA

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by BUD42D/D

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POWER TRANSISTORS

4 AMPERES

650 VOL TS

25 WATTS

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The BUD42D is a state–of–the–art bipolar transistor. Tight dynamic characteristics

and lot to lot minimum spread make it ideally suited to light ballast applications.
Main features:

• Free Wheeling Diode built in

• Flat DC Current Gain

• Fast Switching Times and T ight Distribution

• “6 Sigma” Process Providing Tight and Reproducible Parameter Spreads

Two versions:

• BUD42D–1: Case 369–07 for Insertion Mode

• BUD42D: Case 369A–13 for Surface Mount Mode

MAXIMUM RATINGS

Parameters

Collector–Emitter Sustaining V oltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
Collector Current — Continuous

ОООООООООО

Base Current — Continuous

ОООООООООО

Base Current — Peak (1)

— Peak (1)

*Total Device Dissipation @ TC = 25_C

ОООООООООО

*Derate above 25°C

Operating and Storage Temperature

Symbol

V

CEO

V

CBO

V

CES

V

EBO

I

C

I

CM

ÎÎÎ

I

B

ÎÎÎ

I

BM

P

D

ÎÎÎ

TJ, T

stg

Value

350
650
650

9
4

8

ÎÎÎÎ

1

ÎÎÎÎ

2

25

ÎÎÎÎ

0.2

–65 to +150

Unit

Vdc
Vdc
Vdc
Vdc
Adc

Î

Adc

Î

Watt

Î

W/_C

_

C

TYPICAL GAIN

Typical Gain @IC = 1 A, VCE = 2 V
Typical Gain @IC = 0.3 A, VCE = 1 V

h

FE

h

FE

13
16

—
—

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case

ОООООООООО

— Junction to Ambient

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from case for 5 seconds

ОООООООООО

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

Designer’s is a trademark of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

R

θJC

R

ÎÎÎ

θJA

T

L

ÎÎÎ

5

71.4

ÎÎÎÎ

260

ÎÎÎÎ

_

C/W

Î

Î

_

C

CASE 369–07

CASE 369A–13

MINIMUM PAD SIZES

RECOMMENDED FOR

SURFACE MOUNTED

APPLICATIONS

6.7

0.265

″

6.7

0.265

1.8

30

2.3

0.090

1.6

0.063

1.6

0.063

2.3

0.090

″

.070

0.118

 Motorola, Inc. 1998

Motorola Bipolar Power Transistor Device Data

1

BUD42D

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Î

D

Î

I

A

ÎÎÎ

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Î

Î

ÎÎÎ

Î

Î

µ

Î

ÎÎÎ

Î

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ÎÎÎ

Î

90% of final I

B1

I

200 mA

ÎÎÎ

ÎÎÎ

ELECTRICAL CHARACTERISTICS

Characteristic

(T

= 25°C unless otherwise noted)

C

Symbol

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

ОООООООООООООООООО

(IC = 100 mA, L = 25 mH)

Collector–Base Breakdown Voltage

(I

= 1 mA)

CBO

ОООООООООООООООООО

Emitter–Base Breakdown Voltage

(I

= 1 mA)

EBO

Collector Cutoff Current

ООООООООООООО

(VCE = Rated V

CEO

, IB = 0)

Collector Cutoff Current
(VCE = Rated V

ООООООООООООО

CES

, VEB = 0)

@ TC = 25°C

ÎÎÎÎ

@ TC = 125°C
@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

Emitter–Cutoff Current

V

CEO(sus)

ÎÎ

V

ÎÎ

V

I

ÎÎ

I

ÎÎ

I

(VEB = 9 Vdc, IC = 0)

ON CHARACTERISTICS

Base–Emitter Saturation Voltage

ОООООООООООООООООО

(IC = 1 Adc, IB = 0.2 Adc)

Collector–Emitter Saturation Voltage

(IC = 2 Adc, IB = 0.5 Adc)

ОООООООООООООООООО

DC Current Gain

ОООООООООООООООООО

(IC = 1 Adc, VCE = 2 Vdc)
(IC = 2 Adc, VCE = 5 Vdc)

ОООООООООООООООООО

V

BE(sat)

ÎÎ

V

CE(sat)

ÎÎ

ÎÎ

ÎÎ

DIODE CHARACTERISTICS

Forward Diode Voltage

ОООООООООООООООООО

(IEC = 1.0 Adc)

V

ÎÎ

SWITCHING CHARACTERISTICS: Resistive Load (D.C.≤ 10%, Pulse Width = 40 µs)

Turn–Off Time

(IC = 1.2 Adc, IB1 = 0.4 A, IB2 = 0.1 A, VCC = 300 V)

ОООООООООООООООООО

ÎÎ

Fall Time

(IC = 2.5 Adc, IB1 = IB2 = 0.5 A, VCC = 150 V, VBE = –2 V)

ОООООООООООООООООО

ÎÎ

DYNAMIC SATURATION VOLTAGE

V

CE(dsat)

ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

ynamic Saturation

Voltage:

ОООООО

Determined 1 µs and
3 µs respectively after
rising IB1 reaches

ОООООО

IC = 400 mA

= 40 m

B1

VCC = 300 V

ÎÎÎÎ

IC = 1 A

ÎÎÎÎ

=

B1

VCC = 300 V

@ 1 µs

@ 3 µs

ÎÎ

@ 1 µs

ÎÎ

@ 3 µs

@ TC = 25°C
@ TC = 125°C

@ TC = 25°C

ÎÎÎ

@ TC = 125°C
@ TC = 25°C

@ TC = 125°C

ÎÎÎ

@ TC = 25°C
@ TC = 125°C

CBO

EBO

CEO

CES

EBO

h

FE

EC

T

off

T

f

Min

ÎÎ

350

650

ÎÎ

9

Typ

ÎÎ

430

780

ÎÎ

12

Max

ÎÎ

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100

ÎÎÎÎÎÎÎÎ

200

10

ÎÎÎÎÎÎÎÎ

200

100

ÎÎÎÎÎ

0.85

1.2

ÎÎ

0.2

ÎÎ

ÎÎ

8

10

ÎÎ

ÎÎÎÎÎ

4.6

ÎÎ

ÎÎÎÎÎÎÎÎ

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13
12

ÎÎ

0.9

ÎÎÎÎÎ

ÎÎ1ÎÎ

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ÎÎ

1.5

6.55

0.8

2.8

3.2

0.75

ÎÎÎ

ÎÎÎÎÎ

1.3

2.1

4.7

ÎÎÎ

ÎÎÎÎÎ

0.35

0.6

Unit

Vdc

ÎÎ

Vdc

ÎÎ

Vdc

µAdc

ÎÎ

µAdc

ÎÎ

µAdc

Vdc

ÎÎ

Vdc

—

ÎÎ

ÎÎ

V

ÎÎ

µs

ÎÎ

µs

ÎÎ

V

2

Motorola Bipolar Power Transistor Device Data

TYPICAL STATIC CHARACTERISTICS

BUD42D

100

10

, DC CURRENT GAIN

FE

h

TJ = 125°C

TJ = 25°C

TJ = –20°C

1

IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain @ VCE = 1 V

3

2 A

2

TJ = 25°C

100

TJ = 125°C
TJ = 25°C

10

TJ = –20°C

, DC CURRENT GAIN

FE

h

1010.10.010.001

1

IC, COLLECTOR CURRENT (AMPS)

1010.10.010.001

Figure 2. DC Current Gain @ VCE = 5 V

10

IC/IB = 5

1

, VOLTAGE (VOLTS)

CE

V

, VOLTAGE (VOLTS)

CE

V

100

10

0.1

1.5 A
TJ = 125

°

TJ = 125

C

TJ = –20°C

TJ = –20°C

°

C

TJ = 25°C

1010.10.010.001

TJ = 25°C

1

IC = 0.2 A

0

1 A

0.4 A

1

IB, BASE CURRENT (AMPS)

100.10.010.001

Figure 3. Collector Saturation Region

IC/IB = 8

TJ = 125°C

1

TJ = –20°C

TJ = 25°C

, VOLTAGE (VOLTS)

0.1

CE

V

0.01
IC, COLLECTOR CURRENT (AMPS)

Figure 4. Collector–Emitter Saturation V oltage

10

IC/IB = 10

1

, VOLTAGE (VOLTS)

0.1

CE

V

0.01
1

IC, COLLECTOR CURRENT (AMPS)

Figure 5. Collector–Emitter Saturation V oltage

Motorola Bipolar Power Transistor Device Data

100.10.010.001

0.01
IC, COLLECTOR CURRENT (AMPS)

1

100.10.010.001

Figure 6. Collector–Emitter Saturation V oltage

3

BUD42D

TYPICAL STATIC CHARACTERISTICS

, VOLTAGE (VOLTS)

BE

V

10

IC/IB = 5

1

TJ = –20°C

TJ = 125°C

0.1

TJ = 25°C

IC, COLLECTOR CURRENT (AMPS)

Figure 7. Base–Emitter Saturation Region

10

IC/IB = 10

10

IC/IB = 8

1

TJ = –20°C

, VOLTAGE (VOLTS)

BE

V

TJ = 125°C TJ = 25°C

1

100.10.010.001

0.1

IC, COLLECTOR CURRENT (AMPS)

1

100.10.010.001

Figure 8. Base–Emitter Saturation Region

10

, VOLTAGE (VOLTS)

BE

V

1

TJ = –20°C

TJ = 125°C

0.1

TJ = 25°C

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Base–Emitter Saturation Region

V

1

FORWARD DIODE VOLTAGE (VOLTS)

1

100.10.010.001

0.1

= –20°C

EC(V)

V

= 125°C

EC(V)

REVERSE EMITTER–COLLECTOR CURRENT

V

EC(V)

= 25°C

1

100.10.01

Figure 10. Forward Diode Voltage

4

Motorola Bipolar Power Transistor Device Data

TYPICAL SWITCHING CHARACTERISTICS

BUD42D

1000

C, CAPACITANCE (pF)

t, TIME (ns)

100

10

800
700
600
500
400
300
200
100

900

C

ib

1

VR, REVERSE VOLTAGE (VOLTS)

Figure 11. Capacitance

hFE = 10

hFE = 5

TJ = 125°C
TJ = 25

°

C

0

0.5 1.5
IC, COLLECTOR CURRENT (AMPS)

TJ = 25°C
f

= 1 MHz

(test)

I

Bon

VCC = 300 V
PW = 40

= I

C

Boff

ob

µ

800

I

= 10 mA

700

(VOLTS)

600

VCER

B

500

400

TC = 25°C

100101

s

210

300

9

6

t, TIME (ns)

3

TJ = 125°C
TJ = 25

0

I

= 100 mA

CER

lC = 25 mH

RBE (W)

Figure 12. B

°

C

IC, COLLECTOR CURRENT (AMPS)

VCER

hFE = 10

1

CER

1000

= f(RBE)

I

Bon

VCC = 300 V
PW = 40

1.5

= I

Boff

hFE = 5

1000010010

µ

s

20.50

Figure 13. Resistive Switching, t

4

I

= I

Bon

3

µ

2

t, TIME ( s)

1

0

0

Boff

VCE = 15 V
VZ = 300 V
LC = 200

µ

H

0.5 1 1.5 2
IC, COLLECTOR CURRENT (AMPS)

TJ = 125°C

TJ = 25

Figure 15. Inductive Storage Time,

tsi @ hFE = 5

Motorola Bipolar Power Transistor Device Data

on

4

3

°

C

µ

t, TIME ( s)

2

1

Figure 14. Resistive Switching, t

I

Bon

VCE = 15 V

TJ = 125°C

TJ = 25

°

C

IC, COLLECTOR CURRENT (AMPS)

VZ = 300 V
LC = 200

1.5

off

= I

Boff

µ

H

210.5

Figure 16. Inductive Storage Time,

tsi @ hFE = 10

5

BUD42D

TYPICAL SWITCHING CHARACTERISTICS

400

300

t, TIME (ns)

200

100

I

= I

Bon

Boff

VCC = 15 V
VZ = 300 V
LC = 200

µ

H

0.5 1.5
IC, COLLECTOR CURRENT (AMPS)

Figure 17. Inductive Fall and Cross Over Time,

tfi and tc @ hFE = 5

500

I

= I

Bon

Boff

VCC = 15 V

400

t, TIME (ns)

300

VZ = 300 V
LC = 200

µ

H

TJ = 125°C
TJ = 25

t

c

t

fi

TJ = 125°C

TJ = 25°C

250

°

C

1.5

TJ = 125°C

TJ = 25°C

210.5

200

t, TIME (ns)

210

150

100

I

= I

Bon

Boff

VCE = 15 V
VZ = 300 V
LC = 200

µ

H

IC, COLLECTOR CURRENT (AMPS)

Figure 18. Inductive Fall Time,

tfi @ hFE = 10

5

I

= I

Bon

4

m

3

t, TIME ( s)

2

Boff

VCC = 15 V
VZ = 300 V
LC = 200

µ

I

= 1 A

C

IC = 0.3 A

H

TJ = 125°C
TJ = 25

°

C

, FALL TIME (ns)

fi

t

200

IC, COLLECTOR CURRENT (AMPS)

Figure 19. Inductive Cross Over Time,

tc @ hFE = 10

300

I

= I

Bon

Boff

VCC = 15 V
VZ = 300 V
LC = 200

µ

H

200

100

hFE, FORCED GAIN

Figure 21. Inductive Fall Time, t

1.5

210.5

1

Figure 20. Inductive Storage Time, t

300

IC = 0.3 A

IC = 1 A

TJ = 125°C
TJ = 25

°

C

759

1063

f

200

CROSS–OVER TIME (ns)

100

Figure 22. Inductive Cross Over Time, t

5

hFE, FORCED GAIN

IC = 1 A

hFE, FORCED GAIN

76810911

1243

si

IC = 0.3 A

I

= I

Bon

Boff

VCC = 15 V
TJ = 125°C
TJ = 25

°

C

648

VZ = 300 V

LC = 200

8

µ

H

1042

c

6

Motorola Bipolar Power Transistor Device Data

TYPICAL SWITCHING CHARACTERISTICS

BUD42D

3

I

= I

Bon

Boff

VCC = 15 V
VZ = 300 V

2.5
LC = 200

m

2

t, TIME ( s)

1.5

1

Figure 23. Inductive Storage Time, t

V

CE

0 V

90% I

I

B

IB 1 & 2 = 200 mA

µ

H

50 mA

0.5 1.5
IC, COLLECTOR CURRENT (AMPS)

Dyn 1 ms

Dyn 3 ms

B

1 ms

3 ms

100 mA

500 mA

si

440

420

400

380

360

340

, FORWARD RECOVERY TIME (ns)

fr

320

t

210

300

IF, FORWARD CURRENT (AMPS)

Figure 24. Forward Recovery Time, t

10

I

C

8

6

V

clamp

4

I

B

2

90% I

10% V

B1

di/dt = 10 A/ms, TC = 25°C

1

90% I

t

si

clamp

C

1.5

20.50

fr

t

fi

10% I

C

t

c

TIME

Figure 25. Dynamic Saturation V oltage

Measurements

0

2

40

TIME

68

Figure 26. Inductive Switching Measurements

Motorola Bipolar Power Transistor Device Data

7

BUD42D

+15 V

1

µ

TYPICAL SWITCHING CHARACTERISTICS

T able 1. Inductive Load Switching Drive Circuit

100

µ

F

150
3 W

100

Ω

Ω

3 W

MTP8P10

F

VCE PEAK

IC PEAK

+10 V

COMMON

–V

off

MPF930

Ω

50

MPF930

µ

500

MTP8P10

MUR105

MJE210

F

10% I

MTP12N10

F

Ω

150

F

3 W

F

V

F

I

0.1 V

R

B1

I

out

A

R

B2

1

µ

F

V

FRM

t

fr

VFR (1.1 VF) UNLESS

OTHERWISE SPECIFIED

V

CE

I

B1

I

B

V

(BR)CEO(sus)

L = 10 mH
RB2 =

∞

VCC = 20 Volts
I

= 100 mA

C(pk)

I

B2

Inductive Switching

L = 200

µ

H
RB2 = 0
VCC = 15 Volts
RB1 selected for

desired I

B1

RBSOA

L = 500

µ

H
RB2 = 0
VCC = 15 Volts
RB1 selected for

desired I

B1

10

1 ms

1

0.1

, COLLECTOR CURRENT (AMPS)

C

I

0.01

5 ms

dc

VCE, COLLECTOR–EMITTER VOL TAGE (VOLTS)

Figure 28. Forward Bias Safe Operating Area

8

Figure 27. tfr Measurement

MAXIMUM RATINGS

10 ms

1 ms

EXTENDED SOA

100010010

5

4

3

2

V

1

C

I , COLLECTOR CURRENT (AMPS)

0

VBE = 0 V V

VCE, COLLECTOR–EMITTER VOL TAGE (VOLTS)

BE(off)

= –1.5 V

BE(off)

Figure 29. Reverse Bias Safe Operating Area

Motorola Bipolar Power Transistor Device Data

TJ = 125°C
GAIN
LC = 500

= –5 V

600

≥

4

m

H

700500400300

BUD42D

1

0.8

0.6

0.4

POWER DERATING F ACT OR

0.2

0

60

TC, CASE TEMPERATURE (

Figure 30. Power Derating

There are two limitations on the power handling ability of a
transistor: average junction temperature and second break­down. Safe operating area curves indicate IC–VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa­tion than the curves indicate. The data of Figure 28 is based
on TC = 25°C; T

is variable depending on power level.

j(pk)

Second breakdown pulse limits are valid for duty cycles to
10% but must be derated when TC > 25°C. Second Break­down limitations do not derate like thermal limitations. Allow­able current at the voltages shown on Figure 28 may be

SECOND BREAKDOWN

DERATING

THERMAL DERATING

80 100 120 140

°

C)

found at any case temperature by using the appropriate
curve on Figure 30.

T

may be calculated from the data in Figure 31. At any

j(pk)

case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations im­posed by second breakdown. For inductive loads, high volt­age and current must be sustained simultaneously during
turn–off with the base to emitter junction reverse biased. The
safe level is specified as reverse biased safe operating area
(Figure 29). This rating is verified under clamped conditions
so that the device is never subjected to an avalanche mode.

1604020

1

D = 0.5

0.2

0.1

0.05

0.1

0.02

0.01

r(t) TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

SINGLE PULSE

0.01

P

(pk)

t

1

DUTY CYCLE, D = t1/t

1010.1

t, TIME (ms)

Figure 31. Thermal Response

R

(t) = r(t) R

θ

JC

R

θ

JC

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN

t

2

READ TIME AT t
T

2

J(pk)

θ

= 5°C/W MAX

– TC = P

JC

1

(pk)

R

(t)

θ

JC

10001000.01

Motorola Bipolar Power Transistor Device Data

9

BUD42D

P ACKAGE DIMENSIONS

V

–T–

SEATING
PLANE

V

S

S

F

F

B
R

4

123

G

B

R

4

123

G

A

K

3 PL

D

0.13 (0.005) T

A

K

L

D

2 PL

0.13 (0.005) T

C

E

J

H

M

CASE 369–07

ISSUE L

SEATING

–T–

PLANE

C

E

Z

U

J

H

M

CASE 369A–13

ISSUE Z

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.235 0.250 5.97 6.35
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
E 0.033 0.040 0.84 1.01
F 0.037 0.047 0.94 1.19

0.090 BSC 2.29 BSC

G
H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.175 0.215 4.45 5.46
S 0.050 0.090 1.27 2.28
V 0.030 0.050 0.77 1.27

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.235 0.250 5.97 6.35
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
E 0.033 0.040 0.84 1.01
F 0.037 0.047 0.94 1.19
G 0.180 BSC 4.58 BSC
H 0.034 0.040 0.87 1.01

J 0.018 0.023 0.46 0.58
K 0.102 0.114 2.60 2.89
L 0.090 BSC 2.29 BSC
R 0.175 0.215 4.45 5.46
S 0.020 0.050 0.51 1.27
U 0.020 ––– 0.51 –––
V 0.030 0.050 0.77 1.27
Z 0.138 ––– 3.51 –––

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

MILLIMETERSINCHES

MILLIMETERSINCHES

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Mfax is a trademark of Motorola, Inc.

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Motorola Bipolar Power Transistor Device Data

BUD42D/D