MOTOROLA CUD42D Technical data

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查询BUD42D/D供应商

SEMICONDUCTOR TECHNICAL DATA

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by BUD42D/D

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POWER TRANSISTORS

4 AMPERES

650 VOL TS

25 WATTS

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The BUD42D is a state–of–the–art bipolar transistor. Tight dynamic characteristics

and lot to lot minimum spread make it ideally suited to light ballast applications.
Main features:

• Free Wheeling Diode built in

• Flat DC Current Gain

• Fast Switching Times and T ight Distribution

• “6 Sigma” Process Providing Tight and Reproducible Parameter Spreads

Two versions:

• BUD42D–1: Case 369–07 for Insertion Mode

• BUD42D: Case 369A–13 for Surface Mount Mode

MAXIMUM RATINGS

Parameters

Collector–Emitter Sustaining V oltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
Collector Current — Continuous

ОООООООООО

Base Current — Continuous

ОООООООООО

Base Current — Peak (1)

— Peak (1)

*Total Device Dissipation @ TC = 25_C

ОООООООООО

*Derate above 25°C

Operating and Storage Temperature

Symbol

V

CEO

V

CBO

V

CES

V

EBO

I

C

I

CM

ÎÎÎ

I

B

ÎÎÎ

I

BM

P

D

ÎÎÎ

TJ, T

stg

Value

350
650
650

9
4

8

ÎÎÎÎ

1

ÎÎÎÎ

2

25

ÎÎÎÎ

0.2

–65 to +150

Unit

Vdc
Vdc
Vdc
Vdc
Adc

Î

Adc

Î

Watt

Î

W/_C

_

C

TYPICAL GAIN

Typical Gain @IC = 1 A, VCE = 2 V
Typical Gain @IC = 0.3 A, VCE = 1 V

h

FE

h

FE

13
16

—
—

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case

ОООООООООО

— Junction to Ambient

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from case for 5 seconds

ОООООООООО

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

Designer’s is a trademark of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

R

θJC

R

ÎÎÎ

θJA

T

L

ÎÎÎ

5

71.4

ÎÎÎÎ

260

ÎÎÎÎ

_

C/W

Î

Î

_

C

CASE 369–07

CASE 369A–13

MINIMUM PAD SIZES

RECOMMENDED FOR

SURFACE MOUNTED

APPLICATIONS

6.7

0.265

″

6.7

0.265

1.8

30

2.3

0.090

1.6

0.063

1.6

0.063

2.3

0.090

″

.070

0.118

 Motorola, Inc. 1998

Motorola Bipolar Power Transistor Device Data

1

BUD42D

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D

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I

A

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µ

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90% of final I

B1

I

200 mA

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ELECTRICAL CHARACTERISTICS

Characteristic

(T

= 25°C unless otherwise noted)

C

Symbol

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

ОООООООООООООООООО

(IC = 100 mA, L = 25 mH)

Collector–Base Breakdown Voltage

(I

= 1 mA)

CBO

ОООООООООООООООООО

Emitter–Base Breakdown Voltage

(I

= 1 mA)

EBO

Collector Cutoff Current

ООООООООООООО

(VCE = Rated V

CEO

, IB = 0)

Collector Cutoff Current
(VCE = Rated V

ООООООООООООО

CES

, VEB = 0)

@ TC = 25°C

ÎÎÎÎ

@ TC = 125°C
@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

Emitter–Cutoff Current

V

CEO(sus)

ÎÎ

V

ÎÎ

V

I

ÎÎ

I

ÎÎ

I

(VEB = 9 Vdc, IC = 0)

ON CHARACTERISTICS

Base–Emitter Saturation Voltage

ОООООООООООООООООО

(IC = 1 Adc, IB = 0.2 Adc)

Collector–Emitter Saturation Voltage

(IC = 2 Adc, IB = 0.5 Adc)

ОООООООООООООООООО

DC Current Gain

ОООООООООООООООООО

(IC = 1 Adc, VCE = 2 Vdc)
(IC = 2 Adc, VCE = 5 Vdc)

ОООООООООООООООООО

V

BE(sat)

ÎÎ

V

CE(sat)

ÎÎ

ÎÎ

ÎÎ

DIODE CHARACTERISTICS

Forward Diode Voltage

ОООООООООООООООООО

(IEC = 1.0 Adc)

V

ÎÎ

SWITCHING CHARACTERISTICS: Resistive Load (D.C.≤ 10%, Pulse Width = 40 µs)

Turn–Off Time

(IC = 1.2 Adc, IB1 = 0.4 A, IB2 = 0.1 A, VCC = 300 V)

ОООООООООООООООООО

ÎÎ

Fall Time

(IC = 2.5 Adc, IB1 = IB2 = 0.5 A, VCC = 150 V, VBE = –2 V)

ОООООООООООООООООО

ÎÎ

DYNAMIC SATURATION VOLTAGE

V

CE(dsat)

ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

ynamic Saturation

Voltage:

ОООООО

Determined 1 µs and
3 µs respectively after
rising IB1 reaches

ОООООО

IC = 400 mA

= 40 m

B1

VCC = 300 V

ÎÎÎÎ

IC = 1 A

ÎÎÎÎ

=

B1

VCC = 300 V

@ 1 µs

@ 3 µs

ÎÎ

@ 1 µs

ÎÎ

@ 3 µs

@ TC = 25°C
@ TC = 125°C

@ TC = 25°C

ÎÎÎ

@ TC = 125°C
@ TC = 25°C

@ TC = 125°C

ÎÎÎ

@ TC = 25°C
@ TC = 125°C

CBO

EBO

CEO

CES

EBO

h

FE

EC

T

off

T

f

Min

ÎÎ

350

650

ÎÎ

9

Typ

ÎÎ

430

780

ÎÎ

12

Max

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100

ÎÎÎÎÎÎÎÎ

200

10

ÎÎÎÎÎÎÎÎ

200

100

ÎÎÎÎÎ

0.85

1.2

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0.2

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8

10

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4.6

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13
12

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0.9

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1.5

6.55

0.8

2.8

3.2

0.75

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1.3

2.1

4.7

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ÎÎÎÎÎ

0.35

0.6

Unit

Vdc

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Vdc

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Vdc

µAdc

ÎÎ

µAdc

ÎÎ

µAdc

Vdc

ÎÎ

Vdc

—

ÎÎ

ÎÎ

V

ÎÎ

µs

ÎÎ

µs

ÎÎ

V

2

Motorola Bipolar Power Transistor Device Data

TYPICAL STATIC CHARACTERISTICS

BUD42D

100

10

, DC CURRENT GAIN

FE

h

TJ = 125°C

TJ = 25°C

TJ = –20°C

1

IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain @ VCE = 1 V

3

2 A

2

TJ = 25°C

100

TJ = 125°C
TJ = 25°C

10

TJ = –20°C

, DC CURRENT GAIN

FE

h

1010.10.010.001

1

IC, COLLECTOR CURRENT (AMPS)

1010.10.010.001

Figure 2. DC Current Gain @ VCE = 5 V

10

IC/IB = 5

1

, VOLTAGE (VOLTS)

CE

V

, VOLTAGE (VOLTS)

CE

V

100

10

0.1

1.5 A
TJ = 125

°

TJ = 125

C

TJ = –20°C

TJ = –20°C

°

C

TJ = 25°C

1010.10.010.001

TJ = 25°C

1

IC = 0.2 A

0

1 A

0.4 A

1

IB, BASE CURRENT (AMPS)

100.10.010.001

Figure 3. Collector Saturation Region

IC/IB = 8

TJ = 125°C

1

TJ = –20°C

TJ = 25°C

, VOLTAGE (VOLTS)

0.1

CE

V

0.01
IC, COLLECTOR CURRENT (AMPS)

Figure 4. Collector–Emitter Saturation V oltage

10

IC/IB = 10

1

, VOLTAGE (VOLTS)

0.1

CE

V

0.01
1

IC, COLLECTOR CURRENT (AMPS)

Figure 5. Collector–Emitter Saturation V oltage

Motorola Bipolar Power Transistor Device Data

100.10.010.001

0.01
IC, COLLECTOR CURRENT (AMPS)

1

100.10.010.001

Figure 6. Collector–Emitter Saturation V oltage

3