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SEMICONDUCTOR TECHNICAL DATA
The RF Line
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by CA912/D
. . . designed for broadband applications requiring low–distortion and high
output capability. Specifically intended for CATV/MATV market requirements.
These amplifiers feature ion–implanted arsenic emitter transistors and an all
gold metal system.
• Specified Characteristics at TC = 25°C; VCC = 15 V
Frequency Range — 40 to 860 MHz
Power Gain — 17 dB Typ @ f = 40 MHz
Noise Figure — 7.0 dB Typ @ f = 500 MHz
123 dBµV DIN45004B @ 860 MHz
• All Gold Metallization for Improved Reliability
• Superior Gain, Return Loss and DC Current Stability with Temperature
CASE 714P–03, STYLES 2, 3
MAXIMUM RATINGS
Supply Voltage V
RF Input Power Per Tone P
Storage Temperature T
Operating Case Temperature Range T
ELECTRICAL CHARACTERISTICS (T
Supply Current I
Power Gain (f = 40 MHz) PG 16.5 17 17.5 dB
Bandwidth BW 40 — 860 MHz
Slope (40–860 MHz) S 0.2 0.8 1.5 dB
Gain Flatness FL — — 1.0 dB
Input/Output Return Loss f = 40 – 100 MHz
Second Order Intermodulation Distortion
(Vo = + 50 dBmV/ch.)
DIN45004B (See Figure 1) f = 40 – 400 MHz
Noise Figure f = 500 MHz
f = 860 MHz
(TA = 25°C unless otherwise noted)
Rating
= 25°C, VCC = 15 V, 75 Ohm System)
C
Characteristic
f = 100 – 800 MHz
f = 800 – 860 MHz
f = 400 – 860 MHz
Symbol Value Unit
CC
in
stg
C
Symbol Min Typ Max Unit
DC
IRL/ORL 20
IMD
2
DIN 124
NF —
640 700 760 mA
15
10
— — –67 dB
123
—
– 40 to +100 °C
– 20 to +100 °C
—
17
12
—
—
7.0
8.0
17 dB
40–860 MHz
VHF/UHF
CATV/MATV
AMPLIFIER
18 V
+17 dBm
—
—
—
—
—
8.5
9.5
dB
dBµV
dB
REV 7
Motorola, Inc. 1997
CA912MOTOROLA RF DEVICE DATA
1
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DIN
–60 dB
–6 dB
Pin Configuration
1234 56789
C1
OutputInput
V
CC
6 MHz 12 MHz 6 MHz
Figure 1. DIN45004B T est
C1 ≥0.01 µF (chip)
Figure 2. External Connections
Case 714P–03, Style 3
CA912
2
MOTOROLA RF DEVICE DATA