Motorola BSP16T1 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
–300 Vdc
Collector–Base Voltage V
CBO
–350 Vdc
Emitter–Base Voltage V
EBO
–6.0 Vdc
Collector Current I
C
–1000 mAdc
Base Current I
B
–500 mAdc
Total Device Dissipation, TA = 25°C
(1)
P
D
1.5 Watts
Storage Temperature Range T
stg
–65 to +150 °C
Junction Temperature T
J
150 °C
DEVICE MARKING
BT2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –50 mAdc, IB = 0, L = 25 mH)
V
(BR)CEO
–300 —
Vdc
Collector–Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
V
(BR)CBO
–300 —
Vdc
Collector–Emitter Cutoff Current
(VCE = –250 Vdc, IB = 0)
I
CES
— –50
µAdc
Collector–Base Cutoff Current
(VCB = –280 Vdc, IE = 0)
I
CBO
— –1.0
µAdc
Emitter–Base Cutoff Current
(VEB = –6.0 Vdc, IC = 0)
I
EBO
— –20
µAdc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by BSP16T1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1996
SOT–223 PACKAGE
PNP SILICON
HIGH VOLTAGE
TRANSISTOR
SURFACE MOUNT
Motorola Preferred Device
CASE 318E-04, STYLE 1
TO-261AA
1
2
3
4
COLLECTOR 2,4
BASE
1
EMITTER 3
REV 2
BSP16T1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(continued) (T
A
= 25°C unless otherwise noted)
Characteristics
Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(VCE = –10 Vdc, IC = –50 mAdc)
h
FE
30 120
—
Collector-Emitter Saturation Voltage
(IC = –50 mAdc, IB = –5.0 mAdc)
V
CE(sat)
— –2.0
Vdc
DYNAMIC CHARACTERISTICS
Current Gain – Bandwidth Product
(VCE = –10 Vdc, IC = –10 mAdc, f = 30 MHz)
f
T
15 —
MHz
Collector–Base Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
C
obo
— 15
pF
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