Motorola BS170 Datasheet

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SEMICONDUCTOR TECHNICAL DATA

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N–Channel — Enhancement

Order this document

by BS170/D



1 DRAIN

2
GATE



3 SOURCE

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V
Gate–Source Voltage

— Continuous

— Non–repetitive (tp ≤ 50 µs)
Drain Current
Total Device Dissipation @ TA = 25°C P
Operating and Storage Junction

T emperature Range

ELECTRICAL CHARACTERISTICS (T

(1)

A

Characteristic

= 25°C unless otherwise noted)

V

V

GSM

I

TJ, T

DS

GS

D

D

stg

60 Vdc

±20
±40

0.5 Adc

350 mW

–55 to +150 °C

Vdc
Vpk

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Gate Reverse Current

(VGS = 15 Vdc, VDS = 0)
Drain–Source Breakdown Voltage

(VGS = 0, ID = 100 µAdc)

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = VGS, ID = 1.0 mAdc)
Static Drain–Source On Resistance

(VGS = 10 Vdc, ID = 200 mAdc)
Drain Cutoff Current

(VDS = 25 Vdc, VGS = 0 Vdc)
Forward Transconductance

(VDS = 10 Vdc, ID = 250 mAdc)

(2)

I

GSS

V

(BR)DSS

V

GS(Th)

r

DS(on)

I

D(off)

SMALL–SIGNAL CHARACTERISTICS

Input Capacitance

(VDS = 10 Vdc, VGS = 0, f = 1.0 MHz)

C

SWITCHING CHARACTERISTICS

Turn–On Time

(ID = 0.2 Adc) See Figure 1
Turn–Off Time

(ID = 0.2 Adc) See Figure 1

1. The Power Dissipation of the package may result in a lower continuous drain current.

2. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.

1

2

3

CASE 29–04, STYLE 30

TO–92 (TO–226AA)

— 0.01 10 nAdc

60 90 — Vdc

0.8 2.0 3.0 Vdc

— 1.8 5.0 Ω

— — 0.5 µA

g

fs

iss

t

on

t

off

— 200 — mmhos

— — 60 pF

— 4.0 10 ns

— 4.0 10 ns

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

 Motorola, Inc. 1997

1

BS170

RESISTIVE SWITCHING

+25 V

PULSE GENERAT OR

50

Ω

2.0

1.6

1.2

0.8

, THRESHOLD VOLTAGE

GS(th)

0.4

V

0

50

V

in

40 pF

50

Ω

1.0 M

125

Ω

Figure 1. Switching Test Circuit

VDS = V
ID = 1.0 mA

050

TJ, JUNCTION TEMPERATURE (

100

°

C)

Ω

20 dB

50

Ω

ATTENUATOR

(Vin Amplititude 10 Volts)

GS

150

TO SAMPLING SCOPE
50

Ω

INPUT

2.0

1.6

1.2

0.8

, DRAIN CURRENT (AMPS)

0.4

D(on)

I

t

on

V

out

OUTPUT
INVERTED

INPUT

V

out

10%

V

in

90%

PULSE
WIDTH

t

off

90%

50%

10%

Figure 2. Switching Waveforms

VGS = 10 V

9.0 V

8.0 V

7.0 V

6.0 V

5.0 V

4.0 V

1.0 2.0 3.0 4.00

VDS, DRAIN–TO–SOURCE VOLT AGE (VOLTS)

Figure 3. V

2.0

1.6

1.2

0.8

, DRAIN CURRENT (AMPS)

0.4

D(on)

I

010

GS(th)

VDS, DRAIN–TO–SOURCE VOLT AGE (VOLTS)

Figure 5. Output Characteristics Figure 6. Capacitance versus

Normalized versus T emperature Figure 4. On–Region Characteristics

100

80

60

40

C, CAPACITANCE (pF)

20

01020304050

VGS = 0 V

VDS, DRAIN–TO–SOURCE VOLT AGE (VOLTS)

20

VGS = 10 V

30

9.0 V

8.0 V

7.0 V

6.0 V

5.0 V

4.0 V

40 60

Drain–T o–Source Voltage

C

iss

C

oss

C

rss

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data