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SEMICONDUCTOR TECHNICAL DATA
N–Channel — Enhancement
Order this document
by BS170/D
1 DRAIN
2
GATE
3 SOURCE
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
Gate–Source Voltage
— Continuous
— Non–repetitive (tp ≤ 50 µs)
Drain Current
Total Device Dissipation @ TA = 25°C P
Operating and Storage Junction
T emperature Range
ELECTRICAL CHARACTERISTICS (T
(1)
A
Characteristic
= 25°C unless otherwise noted)
V
V
GSM
I
TJ, T
DS
GS
D
D
stg
60 Vdc
±20
±40
0.5 Adc
350 mW
–55 to +150 °C
Vdc
Vpk
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0)
Drain–Source Breakdown Voltage
(VGS = 0, ID = 100 µAdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static Drain–Source On Resistance
(VGS = 10 Vdc, ID = 200 mAdc)
Drain Cutoff Current
(VDS = 25 Vdc, VGS = 0 Vdc)
Forward Transconductance
(VDS = 10 Vdc, ID = 250 mAdc)
(2)
I
GSS
V
(BR)DSS
V
GS(Th)
r
DS(on)
I
D(off)
SMALL–SIGNAL CHARACTERISTICS
Input Capacitance
(VDS = 10 Vdc, VGS = 0, f = 1.0 MHz)
C
SWITCHING CHARACTERISTICS
Turn–On Time
(ID = 0.2 Adc) See Figure 1
Turn–Off Time
(ID = 0.2 Adc) See Figure 1
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.
1
2
3
CASE 29–04, STYLE 30
TO–92 (TO–226AA)
— 0.01 10 nAdc
60 90 — Vdc
0.8 2.0 3.0 Vdc
— 1.8 5.0 Ω
— — 0.5 µA
g
fs
iss
t
on
t
off
— 200 — mmhos
— — 60 pF
— 4.0 10 ns
— 4.0 10 ns
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
1
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BS170
RESISTIVE SWITCHING
+25 V
PULSE GENERAT OR
50
Ω
2.0
1.6
1.2
0.8
, THRESHOLD VOLTAGE
GS(th)
0.4
V
0
50
V
in
40 pF
50
Ω
1.0 M
125
Ω
Figure 1. Switching Test Circuit
VDS = V
ID = 1.0 mA
050
TJ, JUNCTION TEMPERATURE (
100
°
C)
Ω
20 dB
50
Ω
ATTENUATOR
(Vin Amplititude 10 Volts)
GS
150
TO SAMPLING SCOPE
50
Ω
INPUT
2.0
1.6
1.2
0.8
, DRAIN CURRENT (AMPS)
0.4
D(on)
I
t
on
V
out
OUTPUT
INVERTED
INPUT
V
out
10%
V
in
90%
PULSE
WIDTH
t
off
90%
50%
10%
Figure 2. Switching Waveforms
VGS = 10 V
9.0 V
8.0 V
7.0 V
6.0 V
5.0 V
4.0 V
1.0 2.0 3.0 4.00
VDS, DRAIN–TO–SOURCE VOLT AGE (VOLTS)
Figure 3. V
2.0
1.6
1.2
0.8
, DRAIN CURRENT (AMPS)
0.4
D(on)
I
010
GS(th)
VDS, DRAIN–TO–SOURCE VOLT AGE (VOLTS)
Figure 5. Output Characteristics Figure 6. Capacitance versus
Normalized versus T emperature Figure 4. On–Region Characteristics
100
80
60
40
C, CAPACITANCE (pF)
20
01020304050
VGS = 0 V
VDS, DRAIN–TO–SOURCE VOLT AGE (VOLTS)
20
VGS = 10 V
30
9.0 V
8.0 V
7.0 V
6.0 V
5.0 V
4.0 V
40 60
Drain–T o–Source Voltage
C
iss
C
oss
C
rss
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data