Motorola BC517 Datasheet

1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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NPN Silicon

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CES

30 Vdc

Collector–Base Voltage V

CB

40 Vdc

Emitter–Base Voltage V

EB

10 Vdc

Collector Current — Continuous I

C

1.0 Adc

Total Power Dissipation @ TA = 25°C

Derate above 25°C

P

D

625

12

mW

mW/°C

Total Power Dissipation @ TC = 25°C

Derate above 25°C

P

D

1.5
12

Watts

mW/°C

Operating and Storage Junction

Temperature Range

TJ, T

stg

–55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to

Ambient

R

q

JA

200 °C/W

Thermal Resistance, Junction to Case

R

q

JC

83.3 °C/W

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 2.0 mAdc, VBE = 0)

V

(BR)CES

30 — — Vdc

Collector–Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

V

(BR)CBO

40 — — Vdc

Emitter–Base Breakdown Voltage

(IE = 100 nAdc, IC = 0)

V

(BR)EBO

10 — — Vdc

Collector Cutoff Current

(VCE = 30 Vdc)

I

CES

— — 500 nAdc

Collector Cutoff Current

(VCB = 30 Vdc, IE = 0)

I

CBO

— — 100 nAdc

Emitter Cutoff Current

(VEB = 10 Vdc, IC = 0)

I

EBO

— — 100 nAdc

Order this document

by BC517/D

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SEMICONDUCTOR TECHNICAL DATA



CASE 29–04, STYLE 17

TO–92 (TO–226AA)

1

2

3

 Motorola, Inc. 1996

COLLECTOR 1

BASE

2

EMITTER 3

BC517

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS

(1)

DC Current Gain

(IC = 20 mAdc, VCE = 2.0 Vdc)

h

FE

30,000 — — —

Collector–Emitter Saturation Voltage

(IC = 100 mAdc, IB = 0.1 mAdc)

V

CE(sat)

— — 1.0 Vdc

Base–Emitter On Voltage

(IC = 10 mAdc, VCE = 5.0 Vdc)

V

BE(on)

— — 1.4 Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(2)

(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

f

T

— 200 — MHz

1. Pulse Test: Pulse Width v 2.0%.

2. fT = |hfe| • f

test

R

S

i

n

e

n

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model