Motorola BC489A, BC489, BC489B Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
80 Vdc
Collector–Base Voltage V
CBO
80 Vdc
Emitter–Base Voltage V
EBO
5.0 Vdc
Collector Current — Continuous I
C
0.5 Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
1.5
12
Watt
mW/°C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200 °C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(IC = 10 mAdc, IB = 0)
V
(BR)CEO
80 — — Vdc
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V
(BR)CBO
80 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V
(BR)EBO
5.0 — — Vdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
I
CBO
— — 100 nAdc
ON CHARACTERISTICS*
DC Current Gain
(IC = 10 mAdc, VCE = 2.0 Vdc)
(IC = 100 mAdc, VCE = 2.0 Vdc) BC489
BC489A
BC489B
(IC = 1.0 Adc, VCE = 5.0 Vdc)*
h
FE
40
60
100
160
15
—
—
160
260
—
—
400
250
400
—
—
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.
Order this document
by BC489/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER
BC489,A,B
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS* (Continued)
Collector–Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
V
CE(sat)
—
—
0.2
0.3
0.5
—
Vdc
Base–Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
(1)
V
BE(sat)
—
—
0.85
0.9
1.2
—
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz)
f
T
— 200 — MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
C
ob
— 7.0 — pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
C
ib
— 50 — pF
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
5.0 µs
+10 V
0
V
in
5.0
µ
F
100
100
TURN–ON TIME
–1.0 V
V
CC
+40 V
R
L
OUTPUT
*CS < 6.0 pF
tr = 3.0 ns
5.0 µs
V
in
5.0
µ
F
100
100
TURN–OFF TIME
+V
BB
V
CC
+40 V
R
L
OUTPUT
*CS < 6.0 pF
tr = 3.0 ns
R
B
R
B
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
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