Motorola 3EZ43D5, 3EZ400D5, 3EZ39D5, 3EZ36D5, 3EZ170D5 Datasheet

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MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
Motorola TVS/Zener Device Data
6-43
1–3 Watt DO-41 Surmetic 30 Data Sheet
1 to 3 Watt DO-41 Surmetic 30 Zener Voltage Regulator Diodes
1 to 3 Watt Surmetic 30 Silicon Zener Diodes
. . . a complete series of 1 to 3 Watt Zener Diodes with limits and operating characteristics that reflect the superior capabilities of silicon-oxide-passivated junctions. All this in an axial-lead, transfer-molded plastic package offering protection in all common environmen­tal conditions.
Specification Features:
Surge Rating of 98 Watts @ 1 ms
Maximum Limits Guaranteed On Up To Six Electrical Parameters
Package No Larger Than the Conventional 1 Watt Package
Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are readily solderable POLARITY: Cathode indicated by color band. When operated in zener mode, cathode
will be positive with respect to anode
MOUNTING POSITION: Any WEIGHT: 0.4 gram (approx) WAFER FAB LOCATION: Phoenix, Arizona ASSEMBLY/TEST LOCATION: Seoul, Korea
MAXIMUM RATINGS
Rating Symbol Value Unit
DC Power Dissipation @ TL = 75°C
Lead Length = 3/8 Derate above 75°C
P
D
3
24
Watts
mW/°C
DC Power Dissipation @ TA = 50°C
Derate above 50°C
P
D
1
6.67
Watt
mW/°C
Operating and Storage Junction Temperature Range TJ, T
stg
– 65 to +200 °C
GENERAL
DATA
CASE 59-03
DO-41
PLASTIC
1–3 WATT
DO-41
SURMETIC 30
1 TO 3 WATT
ZENER REGULATOR
DIODES
3.3–400 VOLTS
Figure 1. Power Temperature Derating Curve
TL, LEAD TEMPERATURE (°C)
P , MAXIMUM DISSIPATION (WATTS)
D
0 20 40 60 20080 100 120 140 160 180
0
1
2
3
4
5
L = 1/8
L = 3/8
L = 1
L = LEAD LENGTH TO HEAT SINK
GENERAL DATA — 1-3 WATT DO-41 SURMETIC 30
Motorola TVS/Zener Device Data
6-44
1–3 Watt DO-41 Surmetic 30 Data Sheet
t, TIME (SECONDS)
0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
0.3
0.5
0.7
1
2
3
5
7
10
20
30
D =0.5
0.2
0.1
0.05
0.01
D = 0
DUTY CYCLE, D =t1/t
2
θ
JL
(t, D) TRANSIENT THERMAL RESISTANCE
JUNCTION-TO-LEAD ( C/W)
°
P
PK
t
1
NOTE: BELOW 0.1 SECOND, THERMAL
RESPONSE CURVE IS APPLICABLE
TO ANY LEAD LENGTH (L).
SINGLE PULSE ∆TJL =
θ
JL
(t)P
PK
REPETITIVE PULSES
TJL =
θ
JL
(t,D)P
PK
t
2
0.02
10
20
30
50
100
200
300
500
1K
0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 PW, PULSE WIDTH (ms)
P , PEAK SURGE POWER (WATTS)
PK
1 2 5 10 20 50 100 200 400 1000
0.0003
0.0005
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
2
3
TA = 125°C
TA = 125°C
NOMINAL VZ (VOLTS)
AS SPECIFIED IN ELEC. CHAR. TABLE
Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch
Figure 3. Maximum Surge Power Figure 4. Typical Reverse Leakage
I
R
, REVERSE LEAKAGE (
µ
Adc) @ V
R
RECTANGULAR NONREPETITIVE WAVEFORM
TJ= 25
°
C PRIOR
TO INITIAL PULSE
APPLICATION NOTE
Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junc­tion temperature under any set of operating conditions in order to calculate its value. The following procedure is recom­mended:
Lead Temperature, TL, should be determined from:
TL = θLA PD + T
A
θLA is the lead-to-ambient thermal resistance (°C/W) and
PD is the power dissipation. The value for θLA will vary and
depends on the device mounting method. θLA is generally
30–40°C/W for the various clips and tie points in common
use and for printed circuit board wiring.
The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the mea­sured value of TL, the junction temperature may be deter­mined by:
TJ = TL + T
JL
TJL is the increase in junction temperature above the lead temperature and may be found from Figure 2 for a train of power pulses (L = 3/8 inch) or from Figure 10 for dc power.
TJL = θJL P
D
For worst-case design, using expected limits of IZ, limits of PD and the extremes of TJ (∆TJ) may be estimated. Changes in voltage, VZ, can then be found from:
V = θVZ T
J
θVZ, the zener voltage temperature coefficient, is found from
Figures 5 and 6.
Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. For best regulation, keep current excursions as low as possible.
Data of Figure 2 should not be used to compute surge capa­bility. Surge limitations are given in Figure 3. They are lower than would be expected by considering only junction tempera­ture, as current crowding effects cause temperatures to be ex­tremely high in small spots resulting in device degradation should the limits of Figure 3 be exceeded.
GENERAL DATA — 1-3 WATT DO-41 SURMETIC 30
Motorola TVS/Zener Device Data
6-45
1–3 Watt DO-41 Surmetic 30 Data Sheet
Figure 5. Units To 12 Volts Figure 6. Units 10 To 400 Volts
Figure 7. VZ = 3.3 thru 10 Volts Figure 8. VZ = 12 thru 82 Volts
Figure 9. VZ = 100 thru 400 Volts Figure 10. Typical Thermal Resistance
ZENER VOLTAGE versus ZENER CURRENT
(Figures 7, 8 and 9)
TEMPERATURE COEFFICIENT RANGES
(90% of the Units are in the Ranges Indicated)
VZ, ZENER VOLTAGE @ IZT (VOLTS)
3 4 5 6 7 8 9 10 11 12
10
8 6
4
2 0
–2
–4
RANGE
, TEMPERATURE COEFFICIENT (mV/ C) @ I
ZTVZ
°
θ
1000
500
200
100
50
20
10
10 20 50 100 200 400 1000
VZ, ZENER VOLTAGE @ IZT (VOLTS)
, TEMPERATURE COEFFICIENT (mV/ C) @ I
ZTVZ
°θ
0 1 2 3 4 5 6 7 8 9 10
100
50 30
20 10
1
0.5
0.3
0.2
0.1 VZ, ZENER VOLTAGE (VOLTS)
I , ZENER CURRENT (mA)
Z
2
5 3
0 10 20 30 40 50 60 70 80 90 100
VZ, ZENER VOLTAGE (VOLTS)
I , ZENER CURRENT (mA)
Z
100
50 30
20 10
1
0.5
0.3
0.2
0.1
2
5 3
100 200 300 400250 350150
10
1
0.5
0.2
0.1 VZ, ZENER VOLTAGE (VOLTS)
2
5
I , ZENER CURRENT (mA)
Z
0
10
20
30
40
50
60
70
80
L, LEAD LENGTH TO HEAT SINK (INCH)
PRIMARY PATH OF
CONDUCTION IS THROUGH
THE CATHODE LEAD
0 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1
T
L
JL
, JUNCTION-TO-LEAD THERMAL RESISTANCE
θ
LL
( C/W)
°
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