Motorola 2SC4617 Datasheet
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2SC4617/D
This NPN transistor is designed for general purpose amplifier applications.
This device is housed in the SOT-416/SC–90 package which is designed for
low power surface mount applications, where board space is at a premium.
• Reduces Board Space
• High hFE, 210–460 (typical)
• Low V
CE(sat)
• Available in 8 mm, 7-inch/3000 Unit Tape and Reel
MAXIMUM RATINGS
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current — Continuous I
DEVICE MARKING
2SC4617 = B9
THERMAL CHARACTERISTICS
Power Dissipation
Junction Temperature T
Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (T
Collector-Base Breakdown Voltage (IC = 50 µAdc, IE = 0) V
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V
Emitter-Base Breakdown Voltage (IE = 50 µAdc, IE = 0) V
Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) I
Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IB = 0) I
Collector-Emitter Saturation Voltage
(IC = 60 mAdc, IB = 5.0 mAdc)
DC Current Gain
(VCE = 6.0 Vdc, IC = 1.0 mAdc)
Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz) f
Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1 MHz) C
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%.
, < 0.5 V
(TA = 25°C)
Rating Symbol Value Unit
(BR)CBO
(BR)CEO
(BR)EBO
C
Rating Symbol Max Unit
(1)
= 25°C)
A
Characteristic Symbol Min Typ Max Unit
(2)
(2)
P
D
J
stg
50 Vdc
50 Vdc
5.0 Vdc
100 mAdc
125 mW
150 °C
–55 ~ +150 °C
(BR)CBO
(BR)CEO
(BR)EBO
CBO
EBO
V
CE(sat)
h
FE
T
OB
50 — — Vdc
50 — — Vdc
5.0 — — Vdc
— — 0.5 µA
— — 0.5 µA
— — 0.4
120 — 560
— 180 — MHz
— 2.0 — pF
NPN GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
3
2
1
CASE 463–01, STYLE 1
SOT–416/SC–90
COLLECTOR
3
1
BASE2EMITTER
Vdc
—
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Thermal Clad is a trademark of the Bergquist Company
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
1
2SC4617
TYPICAL ELECTRICAL CHARACTERISTICS
60
50
40
30
20
, COLLECTOR CURRENT (mA)
C
I
10
0
0
2
1.5
1
0.5
, COLLECTOR-EMITTER VOL TAGE (V)
CE
V
0
0.01
20
T
= 25
°
C
A
2468
VCE, COLLECTOR VOL TAGE (V)
Figure 1. IC – V
0.1 1 10 100
IB, BASE CURRENT (mA)
CE
Figure 3. Collector Saturation Region
µ
160
140 µA
120 µA
100 µA
80 µA
60 µA
40 µA
IB = 20 µA
TA = 25°C
1000
A
TA = 75°C
TA = –25°C
100
DC CURRENT GAIN
10
0.1
1 10 100
IC, COLLECTOR CURRENT (mA)
TA = 25°C
VCE = 10 V
Figure 2. DC Current Gain
900
800
700
600
500
400
TA = 25°C
VCE = 5 V
COLLECTOR VOLTAGE (mV)
300
200
100
0
0.5 1 5 10 20 40 60 80 100 150 200
0.2
IC, COLLECTOR CURRENT (mA)
Figure 4. On Voltage
7
18
16
14
, INPUT CAP ACITANCE (pF)
ib
12
C
10
0
2
, CAPACITANCE (pF)
ob
C
1234
VEB (V)
Figure 5. Capacitance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
6
5
4
3
2
1
0
10 20 30 40
VCB (V)
Figure 6. Capacitance
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