Motorola 2N7002LT1 Datasheet

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SEMICONDUCTOR TECHNICAL DATA

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by 2N7002LT1/D

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N–Channel Enhancement

1
GATE

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V
Drain–Gate Voltage (RGS = 1.0 MΩ) V
Drain Current — Continuous TC = 25°C

Drain Current — Continuous TC = 100°C
Drain Current — Pulsed

Gate–Source Voltage

— Continuous
— Non–repetitive (tp ≤ 50 µs)

(2)

(1)

(1)

I

V

V

DSS

DGR

I

D

I

D

DM

GS

GSM

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR–5 Board,

Derate above 25°C
Thermal Resistance, Junction to Ambient R
Total Device Dissipation

Alumina Substrate,

Derate above 25°C
Thermal Resistance, Junction to Ambient R
Junction and Storage Temperature TJ, T

(4)

TA = 25°C

(3)

TA = 25°C

DEVICE MARKING

2N7002L T1 = 702

60 Vdc
60 Vdc

±115

±75

±800

±20
±40

3 DRAIN

2 SOURCE

mAdc

Vdc
Vpk

P

D

θJA

P

D

θJA

stg



Motorola Preferred Device

3

1

2

CASE 318–08, STYLE 21

SOT–23 (TO–236AB)

225

1.8
556 °C/W
300

2.4
417 °C/W

–55 to +150 °C

mW

mW/°C

mW

mW/°C

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

A

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0, ID = 10 µAdc)

Zero Gate Voltage Drain Current TJ = 25°C

(VGS = 0, VDS = 60 Vdc) TJ = 125°C

Gate–Body Leakage Current, Forward

(VGS = 20 Vdc)

Gate–Body Leakage Current, Reverse

(VGS = –20 Vdc)

1. The Power Dissipation of the package may result in a lower continuous drain current.

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

3. FR–5 = 1.0 x 0.75 x 0.062 in.

4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

 Motorola, Inc. 1997

V

(BR)DSS

I

DSS

I

GSSF

I

GSSR

60 — — Vdc

—
—

— — 100 nAdc

— — –100 nAdc

—
—

1.0

500

µAdc

1

2N7002LT1

(

DD

,

D

,

(T

ELECTRICAL CHARACTERISTICS

Characteristic

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

On–State Drain Current

(VDS ≥ 2.0 V

Static Drain–Source On–State Voltage

(VGS = 10 Vdc, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)

Static Drain–Source On–State Resistance

(VGS = 10 V, ID = 500 mAdc) TC = 25°C

(VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C

Forward Transconductance

(VDS ≥ 2.0 V

DS(on)

DS(on)

(2)

, VGS = 10 Vdc)

, ID = 200 mAdc)

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Output Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

SWITCHING CHARACTERISTICS

Turn–On Delay Time
Turn–Off Delay Time

(VDD = 25 Vdc, ID ^ 500 mAdc,
RG = 25 Ω, RL = 50 Ω)

BODY–DRAIN DIODE RATINGS

Diode Forward On–Voltage

(IS = 11.5 mAdc, VGS = 0 V)

Source Current Continuous

(Body Diode)

Source Current Pulsed I

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

= 25°C unless otherwise noted) (Continued)

A

TC = 125°C

TC = 125°C

(2)

Symbol Min Typ Max Unit

V

GS(th)

I

D(on)

V

DS(on)

r

DS(on)

g

C

C

C

t

d(on)

t

d(off)

V

I

SM

FS

iss

oss

rss

SD

S

1.0 — 2.5 Vdc

500 — — mA

—
—

—
—
—
—

80 — — mmhos

— — 50 pF

— — 25 pF

— — 5.0 pF

— — 30 ns
— — 40 ns

— — –1.5 Vdc

— — –115 mAdc

— — –800 mAdc

—
—

—
—
—
—

3.75

0.375

7.5

13.5

7.5

13.5

Vdc

Ohms

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data