Motorola 2N7000 Datasheet
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N7000/D
N–Channel — Enhancement
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain Source Voltage V
Drain–Gate Voltage (RGS = 1.0 MΩ) V
Gate–Source Voltage
— Continuous
— Non–repetitive (tp ≤ 50 µs)
Drain Current
Continuous
Pulsed
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature Range TJ, T
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
Maximum Lead Temperature for
Soldering Purposes, 1/16″ from case
for 10 seconds
V
V
I
DSS
DGR
GS
GSM
I
D
DM
P
θJA
T
3 DRAIN
2
GATE
1 SOURCE
60 Vdc
60 Vdc
±20
±40
200
500
D
stg
L
350
2.8
–55 to +150 °C
357 °C/W
300 °C
Vdc
Vpk
mAdc
mW
mW/°C
Motorola Preferred Device
1
2
3
CASE 29–04, STYLE 22
TO–92 (TO–226AA)
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
C
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 µAdc)
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TJ = 125°C)
Gate–Body Leakage Current, Forward
(V
= 15 Vdc, VDS = 0)
GSF
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static Drain–Source On–Resistance
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
(1)
Symbol Min Max Unit
V
(BR)DSS
I
DSS
I
GSSF
V
GS(th)
r
DS(on)
V
DS(on)
60 — Vdc
—
—
— –10 nAdc
0.8 3.0 Vdc
—
—
—
—
1.0
1.0
5.0
6.0
2.5
0.45
mAdc
µAdc
Ohm
Vdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
1
2N7000
)
f = 1.0 MHz)
(
DD
,
D
,
(T
ELECTRICAL CHARACTERISTICS
Characteristic
ON CHARACTERISTICS
On–State Drain Current
(VGS = 4.5 Vdc, VDS = 10 Vdc)
Forward Transconductance
(VDS = 10 Vdc, ID = 200 mAdc)
(1)
(continued)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn–On Delay Time
Turn–Off Delay Time
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
= 25°C unless otherwise noted) (Continued)
C
(VDS = 25 V, VGS = 0,
f = 1.0 MHz
(1)
(VDD = 15 V, ID = 500 mA,
R
= 25 ohms, RL = 25 ohms)
gen
Symbol Min Max Unit
I
d(on)
g
C
iss
C
oss
C
rss
t
on
t
off
fs
75 — mAdc
100 — µmhos
— 60
— 25
— 5.0
— 10
— 10
pF
ns
2.0
1.8
TA = 25°C
1.6
1.4
1.2
1.0
0.8
0.6
, DRAIN CURRENT (AMPS)
D
I
0.4
0.2
0
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
VGS = 10 V
9 V
8 V
7 V
6 V
5 V
4 V
3 V
100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
Figure 1. Ohmic Region
2.4
2.2
VGS = 10 V
2.0
ID = 200 mA
1.8
1.6
1.4
1.2
(NORMALIZED)
1.0
0.8
, STA TIC DRAIN–SOURCE ON–RESISTANCE
0.6
0.4
DS(on)
r
–60 –20 +20 + 60 +100 +140 –60 –20 + 20 +60 +100 +140
°
T, TEMPERA TURE (
C)
1.0
VDS = 10 V
0.8
0.6
0.4
, DRAIN CURRENT (AMPS)
D
I
0.2
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
, THRESHOLD VOLTAGE (NORMALIZED)
0.75
GS(th)
V
0.7
–55°C
125°C
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
VDS = V
ID = 1.0 mA
T, TEMPERA TURE (°C)
25°C
100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
GS
2
Figure 3. T emperature versus Static
Drain–Source On–Resistance
Figure 4. T emperature versus Gate
Threshold V oltage
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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